absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 2.5 i d @ v gs = 12v, t c = 100c continuous drain current 1.6 i dm pulsed drain current ? 10 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 154 mj i ar avalanche current ? 2.5 a e ar repetitive avalanche energy ? 2.5 mj dv/dt peak diode recovery dv/dt ? 8.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10 sec.) weight 0.98 (typical) g pre-irradiation o c a radiation hardened power mosfet thru-hole (to-39) 02/07/03 www.irf.com 1 to-39 product summary part number radiation level r ds(on) i d qpl part number IRHF7430SE 100k rads (si) 1.77 ? 2.5a jansr2n7464t2 features: single event effect (see) hardened ultra low r ds(on) low total gate charge neuton tolerant simple drive requirements ease of paralleling hermetically sealed light weight for footnotes refer to the last page IRHF7430SE jansr2n7464t2 international rectifier?s radhard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. rad hard ? hexfet ? technology 500v, n-channel ref: mil-prf-19500/675 pd - 91863c
IRHF7430SE, jansr2n7464t2 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 500 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.56 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 1.77 ? v gs = 12v, i d = 1.6a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 0.8 ? ? s ( )v ds > 15v, i ds = 1.6a ? i dss zero gate voltage drain current ? ? 50 v ds = 400v ,v gs =0v ? ? 250 v ds = 400v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 30 v gs =12v, i d = 2.5a q gs gate-to-source charge ? ? 7.0 nc v ds = 250v q gd gate-to-drain (?miller?) charge ? ? 18 t d (on) turn-on delay time ? ? 30 v dd = 250v, i d = 2.5a, t r rise time ? ? 60 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 65 t f fall time ? ? 45 l s + l d total inductance ? 7.0 ? c iss input capacitance ? 620 ? v gs = 0v, v ds = 25v c oss output capacitance ? 148 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 52 ? na ? ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 5.0 r thja junction-to-ambient ? ? 175 typical socket mount c/w measured from drain lead (6mm /0.25in. from package) to source lead (6mm / 0.25in. from package) source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 2.5 i sm pulse source current (body diode) ? ?? 10 v sd diode forward voltage ? ? 1.4 v t j = 25c, i s = 2.5a, v gs = 0v ? t rr reverse recovery time ? ? 600 ns t j = 25c, i f = 2.5a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.2 cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page
www.irf.com 3 IRHF7430SE, jansr2n7464t2 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 500 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 50 a v ds = 400v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 1.77 ? v gs = 12v, i d = 1.6a r ds(on) static drain-to-source v sd diode forward voltage ? 1.4 v v gs = 0v, i d = 2.5a on-state resistance (to-39) ? 1.77 ? v gs = 12v, i d = 1.6a ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 285 43 375 375 375 375 375 br 38 305 39 350 350 350 325 300 0 100 200 300 400 0 -5 -10 -15 -20 vgs vds cu br
IRHF7430SE, jansr2n7464t2 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.01 0.1 1 10 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 2.5a
www.irf.com 5 IRHF7430SE, jansr2n7464t2 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 250 500 750 1000 1250 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 8 16 24 32 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 2.6a v = 100v ds v = 250v ds v = 400v ds 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 2.5a
IRHF7430SE, jansr2n7464t2 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) i , drain current (a) c d
www.irf.com 7 IRHF7430SE, jansr2n7464t2 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation . v gs 25 50 75 100 125 150 0 50 100 150 200 250 300 350 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.1a 1.6a 2.5a
IRHF7430SE, jansr2n7464t2 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 400 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 50v, starting t j = 25c, l= 49 mh peak i l = 2.5a, v gs = 12v ? i sd 2.5a, di/dt 400a/ s, v dd 500v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03 case outline and dimensions ? to-205af (modified to-39) legend 1- source 2- gate 3- drain
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