CHM3128JPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t dual n-channel enhancement mode field effect transistor voltage 30 volts current 9 ampere a p p l i c a t i o n f e a t u r e * h i g h d e n s i t y c e l l d e s i g n f o r extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2007-11 * rugged and reliable. * high saturation current capability. c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM3128JPT units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 2500 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 62.5 9 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 36 d i m e n s i o n s i n m i l l i m e t e r s so-8 * small flat package. (so-8 ) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting so-8 1 8 5 1.27 ( 0.05 )bsc .51 ( 0.02 0 ) .10 (0.012) .25 ( 0.010 ) .17 (0.007) 4.06 ( 0.160 ) 3.70 ( 0.146 ) 5.00 ( 0.197 ) 4.69 ( 0.185 ) 1.75 (0.069) 1.35 ( 0.053 ) 6.20 ( 0.244 ) 5.80 ( 0.228 ) .25 ( 0.010 ) .05 (0.002) 4 4 1 5 8 s 1 s 2 d 1 d 1 g 1 g 2 d 2 d 2
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3128JPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s 1 m i n b v t y p d s s m a x drain-source breakdown voltage u n i t s v o f f c h a r a c t e r i s t i c s gs = 0 v, i d 16 o n c h a r a c t e r i s t i c s = 250 a n a 30 v n a r i ds(on) gssf static drain-source on-resistance dss m w s vgs=10v, id=9a zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 30 v, v v gs gs = switching 20v, characteristics = 0 v v ds = 0 v a +100 q gs -100 gate-source charge v gs = -20v, v q gd ds gate-drain charge = 0 v t on turn-on time ns v dd = 15v i v d gs = 9a (th) , gate threshold voltage v v g ds s = 10 v 24 = v t gs r , i rise time d 7 = 250 a 1 v vgs=4.5v, id=7.2a 64 t f fall time 12.4 q g total gate charge 1.8 vds=15v, id=9a vgs=10v turn-off time t off rgen= 0.3 w (note 2) (note 4) 3 nc 12 3.5 32 6.7 drain-source diode characteristics and maximum ratings 14.8 i v sd drain-source diode forward current drain-source diode forward voltage i s = 9a , v g s = 0 v 9 1.3 a v (note 1) (note 2) 23 13 18 2.9 19.7 i gssr dynamic characteristics input capacitance reverse transfer capacitance output capacitance c iss c oss c rss v ds = 15v, v gs = 0v, f = 1.0 mhz 950 165 85 pf
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3128JPT ) t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s 0 1.0 2.0 3.0 0 7 14 35 4.0 21 28 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics v gs= 10,8,6v v gs= 3.0v 20 0 i , dr a in current (a) d 0 4 8 vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 1.0 2.0 5.0 12 16 10 0 3 6 9 12 15 0 2 4 6 8 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 3. gate charge id=9a vds=20v 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) figure 4. on-resistance variation with temperature id=9a vgs=10v -50 0 50 100 150 200 temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id=250ua vds=vgs 3.0 4.0 v gs= 4.0v
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