unisonic technologies co., ltd utt150n06 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-512.a 150 amps, 60 volts n-channel power mosfet ? description the utc utt150n06 is an n-channel power trench mosfet, using utc?s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. the utc utt150n06 is generally applied in synchronous rectification or dc to dc converter. ? features * 150a, 60v, r ds(on) =3.2m ? @ v gs =10v, i d = 75a * low gate charge (typical 102nc) * high switching speed * high power and current handling capability * rohs compliant ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT150N06L-TA3-T utt150n06g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt150n06 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw ver.a ? absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v peak diode recovery dv/dt (note 3) dv/dt 7.0 v/ns continuous (t c =25c, silicion limited) i d 150 a drain current pulsed (note 1) i dm 600 a single pulsed avalanche energy (note 2) e as 872 mj t c =25c 231 power dissipation derate above 25c p d 1.54 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.94 c/w
utt150n06 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw ver.a ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v, t c =25c 60 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 0.04 v/c v ds =60v, v gs =0v 1 drain-source leakage current i dss v ds =60v, v gs =0v , t c =150c 500 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.5 3.5 4.5 v static drain-source on-state resistance r ds(on) v gs =10v, i d =75a 3.2 4.0 m ? forward transconductance g fs v ds =10v, i d =75a (note 4) 169 s dynamic parameters input capacitance c iss 6190 8235 pf output capacitance c oss 900 1195 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 385 580 pf switching parameters total gate charge q g(tot) 102 133 nc gate to source charge q gs 32 nc gate to drain charge q gd v gs =10v, v ds =48v, i d =75a (note 4, 5) 32 nc turn-on delay time t d(on) 30 70 ns rise time t r 40 90 ns turn-off delay time t d(off) 55 120 ns fall-time t f v dd =30v, i d =75a, r gen =4.7 ? , v gs =10v 24 58 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 150 a maximum body-diode pulsed current i sm 600 a drain-source diode forward voltage v sd i sd =150a, v gs =0v 1.3 v body diode reverse recovery time t rr 41 ns body diode reverse recovery charge q rr i sd =150a, v gs =0v, di f /dt=100a/s (note 4) 47 c notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. l = 0.31mh, i as = 75a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 75a, di/dt 200a/s, v dd bv dss , starting t j = 25c 4. pulse test: pulse width 300s, duty cycle 2% 5. essentially independent of operating temperatur e typical characteristics
utt150n06 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw ver.a ? test circuits and waveforms dut v ds 10v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 1ma r l 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 unclamped inductive switching waveforms
utt150n06 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw ver.a v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
utt150n06 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw ver.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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