View AON6908A_5763281.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AON6908A 30v dual asymmetric n-channel mosfet general description product summary q1 q2 30v 30v i d (at v gs =10v) 46a 80a r ds(on) (at v gs =10v) <8.9m w <3.6m w r ds(on) (at v gs = 4.5v) <12.5m w <4.5m w 100% uis tested 100% rg tested symbol v ds v gs i dm i as , i ar e as , e ar v ds spike v spike t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 29 24 35 29 steady-state 56 50 67 60 steady-state r q jc 3.3 1.2 4 1.6 100ns 36 36 v junction and storage temperature range -55 to 150 c thermal characteristics 1.9 2.1 1.2 1.3 11.5 17 46 80 28 100 vv 62 20 12 a 30 200 v ds max q1 max q2 units units 40 36 80 a w absolute maximum ratings t a =25c unless otherwise noted mj avalanche current c continuous drain current a 9 i d 27 13.5 t c =100c pulsed drain current c continuous drain current g parameter gate-source voltage drain-source voltage w t a =70c t a =25c t a =25c i dsm t a =70c p d 31 78 avalanche energy l=0.1mh c 31 12 the AON6908A is designed to provide a high efficien cy synchronous buck power stage with optimal layout an d board space utilization. it includes two specializ ed mosfets in a dual power dfn5x6 package. the q1 "hig h side" mosfet is desgined to minimze switching losse s. the q2 "low side" mosfet is an srfet? that features low r ds(on) to reduce conduction losses as well as an integrated schottky diode with low q rr and v f to reduce switching losses. the AON6908A is well suited for use in compact dc/dc converter applications. maximum junction-to-case t c =25c t c =100c power dissipation a p dsm power dissipation b t c =25c c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w top view bottom view pin1 dfn5x6 top view bottom view bottom view rev0 : sep 2010 www.aosmd.com page 1 of 11
AON6908A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.4 v i d(on) 100 a 7.4 8.9 t j =125c 11.1 13.4 10 12.5 m w g fs 50 s v sd 0.7 1 v i s 34 a c iss 680 850 1110 pf c oss 260 380 540 pf c rss 18 30 51 pf r g 0.7 1.4 2.1 w q g (10v) 10 12.5 15 nc q g (4.5v) 4.6 5.7 6.9 nc q gs 1.6 2 2.4 nc q gd 1.5 2.6 3.6 nc t d(on) 5 ns t r 9.5 ns t d(off) 18.5 ns t f 4 ns t rr 8 10.5 13 ns q rr 13 17.2 21 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =11.5a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =11.5a gate source charge gate drain charge total gate charge v ds =v gs i d =250 m a r ds(on) static drain-source on-resistance m w forward transconductance i s =1a,v gs =0v v ds =5v, i d =11.5a v gs =4.5v, i d =11.5a diode forward voltage q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =11.5a reverse transfer capacitance i f =11.5a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with ta=25c. rev 0 : sep 2010 www.aosmd.com page 2 of 11
AON6908A q1-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 4 6 8 10 12 14 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =11.5a v gs =10v i d =11.5a 5 10 15 20 25 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =11.5a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 4.5v 10v 4v 3.5v 7v 6v 5v rev 0 : sep 2010 www.aosmd.com page 3 of 11
AON6908A q1-channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150c t c =25c 10 m s 0 2 4 6 8 10 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =15v i d =11.5a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c r q jc =4c/w rev 0 : sep 2010 www.aosmd.com page 4 of 11
AON6908A q1-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10.0 100.0 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r q ja =67c/w rev 0 : sep 2010 www.aosmd.com page 5 of 11
AON6908A symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =55c 100 i gss 100 na v gs(th) gate threshold voltage 1 1.5 2 v i d(on) 200 a 2.9 3.6 t j =125c 4.3 5.2 3.3 4.5 m w g fs 115 s v sd 0.4 0.7 v i s 80 a c iss 3500 4380 5260 pf c oss 340 490 640 pf c rss 160 280 400 pf r g 0.3 0.7 1.1 w q g (4.5v) 24 31 38 nc q gs 11 nc q gd 9 nc t d(on) 10 ns t r 6 ns t d(off) 50 ns t f 7 ns t rr 9 12 15 ns q rr 17 22 27 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m w body diode reverse recovery time drain-source breakdown voltage i d =10ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a on state drain current v gs =4.5v, i d =20a forward transconductance i dss ma v ds =v gs i d =250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance diode forward voltage v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz gate drain charge v gs =10v, v ds =15v, i d =20a gate resistance i s =1a,v gs =0v body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime v gs =0v, v ds =0v, f=1mhz turn-off fall time gate source charge v ds =5v, i d =20a i f =20a, di/dt=500a/ m s switching parameters maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time total gate charge a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. rev 0 : sep 2010 www.aosmd.com page 6 of 11
AON6908A q2-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0 20 40 60 80 100 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 1 2 3 4 5 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 0 2 4 6 8 10 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 30 60 90 120 150 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 4.5v 7v 10v 3v rev 0 : sep 2010 www.aosmd.com page 7 of 11
AON6908A q2-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 20 40 60 80 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s r q jc =1.6c/w rev 0 : sep 2010 www.aosmd.com page 8 of 11
AON6908A q2-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 20 40 60 80 100 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =60c/w 1 10 100 1000 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 0 : sep 2010 www.aosmd.com page 9 of 11
AON6908A q2-channel: typical electrical and thermal characteristics 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 17: diode reverse leakage current vs. junction temperature i r (a) v ds =15v v ds =30v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 50 100 150 200 temperature (c) figure 18: diode forward voltage vs. junction temperature v sd (v) i s =1a 10a 20a 5a 10 15 20 25 30 35 40 0 5 10 15 20 25 30 i s (a) figure 18: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 2 4 6 8 10 12 i rm (a) di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 5 10 15 20 25 30 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 20: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 5 10 15 20 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 i s (a) figure 19: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 2.5 3 s di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 3 6 9 12 15 18 21 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 21: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 2.5 3 3.5 4 s 125oc 25oc 25oc 125o i s =20a t rr s rev 0 : sep 2010 www.aosmd.com page 10 of 11
AON6908A - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0 : sep 2010 www.aosmd.com page 11 of 11

▲Up To Search▲

Price & Availability of AON6908A

	To Download AON6908A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .