TK8A50D 2008-09-16 1 toshiba field effect transistor silicon n channel mos type ( -mos ) TK8A50D switching regulator applications ? low drain-source on-resistance: r ds (on) = 0.7 (typ.) ? high forward transfer admittance: |y fs | = 4.0 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 500 v) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v dc (note 1) i d 8 drain current pulse (t = 1 ms) (note 1) i dp 32 a drain power dissipation (tc = 25c) p d 40 w single pulse avalanche energy (note 2) e as 165 mj avalanche current i ar 8 a repetitive avalanche energy (note 3) e ar 4.0 mj channel temperature t ch 150 c storage temperature range t stg -55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concep t and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.125 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: ensure that the channel temperature does not exceed 150 . note 2: v dd = 90 v, t ch = 25c (initial), l = 4.4 mh, r g = 25 , i ar = 8 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm 1: gate 2: drain 3: source jedec D jeita sc-67 toshiba 2-10u1b weight : 1.7 g (typ.) 1 3 2 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TK8A50D 2008-09-16 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 500 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 500 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 4 a ? 0.7 0.85 forward transfer admittance ? y fs ? v ds = 10 v, i d = 4 a 1.0 4.0 ? s input capacitance c iss ? 800 ? reverse transfer capacitance c rss ? 4 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 100 ? pf rise time t r ? 20 ? turn-on time t on ? 40 ? fall time t f ? 12 ? switching time turn-off time t off ? 60 ? ns total gate charge q g ? 16 ? gate-source charge q gs ? 10 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 8 a ? 6 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 8 a pulse drain reverse current (note 1) i drp ? ? ? 32 a forward voltage (diode) v dsf i dr = 8 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1200 ? ns reverse recovery charge q rr i dr = 8 a, v gs = 0 v, di dr /dt = 100 a/ s ? 10 ? c marking r l = 50 0 v 10 v v dd 200 v i d = 4 a v out 50 duty 1%, t w = 10 s lot no. k8a50d part no. (or abbreviation code) a line indicates lead(pb)-free finish v gs www.datasheet.net/ datasheet pdf - http://www..co.kr/
TK8A50D 2008-09-16 3 i d ? v ds drain current i d (a) drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ) drain current i d (a) ? y fs ? ? i d forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs common source tc = 25c pulse test 0 6 8 10 0 i d = 8 a 4 8 12 16 20 2 4 4 2 common source tc = 25 pulse test common source v ds = 20 v pulse test 0.1 0.1 1 10 100 1 10 v gs = 10 v ? 15 v common source tc = 25c pulse test drain-source voltage v ds (v) 10 8 4 2 0 0 2 4 6 8 10 v gs = 6 v 6.5 7 7.25 7.5 7.75 10 6 common source tc = 25c pulse test 16 12 8 4 0 0 20 40 50 v gs = 6.5v 8.25 8.5 8.75 10 9 30 10 8 7.5 7 10 0 0 2 4 6 8 4 20 25 100 8 12 16 12 common source v ds = 20 v pulse test 0.1 10 0.1 1 100 tc = ? 55c 10 1 8 tc = ? 55c 25 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TK8A50D 2008-09-16 4 drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) drain power dissipation p d (w) case temperature tc (c) p d ? tc drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) case temperature tc (c) v th ? tc case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input / output characteristics drain-source voltage v ds (v) common source tc = 25c pulse test 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 common source v ds = 10 v i d = 1 ma pulse test common source v gs = 10 v pulse test common source v gs = 0 v f = 1 mhz tc = 25c 160 ? 40 0 40 80 120 ? 80 3.0 1.5 1.0 0.5 0 i d = 8 a 2 4 2.5 0 0.1 1 10 ? 0.4 ? 0.6 ? 0.8 v gs = 0, ? 1 v 10 3 1 5 ? 1.0 ? 1.2 2.0 ? 0.2 60 0 0 40 80 120 20 40 0 5 10 v dd = 100 v v ds v gs 400 200 15 30 20 500 400 300 200 100 0 20 16 12 8 4 0 25 common source i d = 8 a tc = 25c pulse test 160 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TK8A50D 2008-09-16 5 0.01 10 0.1 1 10 100 1 m 10 m 100 m 1 10 0.001 channel tempeature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) ?15 v 15 v test circuit waveform i ar b vdss v dd v ds drain-source voltage v ds (v) safe operating area drain current i d (a) 0.01 1 0.1 10 100 10 1000 100 100 s * 1 ms * v dss max 0.001 1 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. t p dm t duty = t/t r th (ch-c) = 3.125c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 i d max (pulsed) * i d max (continuous) * dc operation tc = 25c 200 160 120 80 40 0 25 50 75 100 125 150 r g = 25 v dd = 90 v, l = 4.4 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as single pulse www.datasheet.net/ datasheet pdf - http://www..co.kr/
TK8A50D 2008-09-16 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their i nherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshiba products specific ations. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traf fic signal instruments, comb ustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshi ba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TK8A50D 2008-09-16 7 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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