2sJ380 2007-02-01 1 toshiba field effect transistor silicon p channel mos type (l 2 - -mosv) 2sJ380 relay drive, dc-dc converter and motor drive applications ? 4-v gate drive ? low drain-source on resistance: r ds (on) = 0.15 ? (typ.) ? high forward transfer admittance: |y fs | = 7.7 s (typ.) ? low leakage current: i dss = ? 100 a (max) (v ds = ? 100 v) ? enhancement mode: v th = ? 0.8~ ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ?100 v drain-gate voltage (r gs = 20 k ) v dgr ?100 v gate-source voltage v gss 20 v dc (note 1) i d ?12 drain current pulse (note 1) i dp ?48 a drain power dissipation (tc = 25c) p d 35 w single pulse avalanche energy (note 2) e as 312 mj avalanche current i ar ?12 a repetitive avalanche energy (note 3) e ar 3.5 mj channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.57 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note1: ensure that the channel te mperature does not exceed 150c. note 2: v dd = ? 25 v, t ch = 25c (initial), l = 2.94 mh, r g = 25 , i ar = ? 12 a note 3: repetitive rating: pulse width li mited by maximum junction temperature this transistor is an electrostatic-sensit ive device. please handle with caution. unit: mm jedec D jeita sc-67 toshiba 2-10r1b weight: 1.9 g (typ.) www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ380 2007-02-01 2 electrical characteristics (tc = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ?100 v, v gs = 0 v ? ? ?100 a drain-source breakdown voltage v (br) dss i d = ?10 ma, v gs = 0 v ?100 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ?1 ma ?0.8 ? ? 2.0 v v gs = ?4 v, i d = ?6 a ? 0.25 0.32 drain-source on resistance r ds (on) v gs = ?10 v, i d = ?6 a ? 0.15 0.21 forward transfer admittance ? y fs ? v ds = ?10 v, i d = ?6 a 4.5 7.7 ? s input capacitance c iss ? 1100 ? pf reverse transfer capacitance c rss ? 200 ? pf output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz ? 440 ? pf rise time t r ? 18 ? turn-on time t on ? 30 ? fall time t f ? 18 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 65 ? ns total gate charge (gate-source plus gate-drain) q g ? 48 ? nc gate-source charge q gs ? 29 ? nc gate-drain (?miller?) charge q gd v dd ? ?80 v, v gs = ?10 v, i d = ?12 a ? 19 ? nc source-drain ratings and characteristics (tc = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? ? 12 a pulse drain reverse current (note 1) i drp ? ? ? ? 48 a forward voltage (diode) v dsf i dr = ?12 a, v gs = 0 v ? ? 1.7 v reverse recovery time t rr ? 160 ? ns reverse recovery charge q rr i dr = ?12 a, v gs = 0 v di dr /dt = 50 a/ s ? 0.5 ? c marking ?10 v 0 v v gs r l = 8.3 v dd ? ?50 v i d = ?6 a v out 50 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. J380 characteristics indicator part no. (or abbreviation code) www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ380 2007-02-01 3 drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) ? 10 0 0 ? 8 ? 20 ? 10 ? 4 ? 4 ? 12 ? 16 common source tc = 25c pulse test ? 2 ? 6 ? 8 ? 2.5 ? 3 ? 4 ? 6 ? 8 v gs = ? 2 v ? 3.5 drain-source voltage v ds (v) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs 0 0 ? 1.6 ? 0.8 ? 3.2 ? 2.4 ? 4 ? 8 ? 12 ? 16 ? 20 i d = ? 8 a ? 4 ? 2 common source tc = 25c pulse test ? 6 0 0 ? 1 ? 2 ? 3 ? 5 ? 6 ? 4 ? 2 ? 4 ? 8 ? 10 25 100 tc = ? 55c common source v ds = ? 10 v pulse test forward transfer admittance ? y fs ? (s) drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain?source on resistance r ds (on) ( ) 0.03 ? 0.1 ? 20 ? 1.0 ? 0.3 ? 10 common source tc = 25c pulse test 2.0 1.0 0.1 0.3 ? 3 v gs = ? 4 v ? 10 0.05 0.5 ? 10 0 0 ? 2 ? 5 ? 2.0 ? 1 ? 3 ? 4 common source tc = 25c pulse test ? 0.4 ? 1.2 ? 1.6 v gs = ? 2 v ? 2.5 ? 3 ? 4 ? 6 ? 8 ? 0.8 tc = ? 55c 100 25 1 ? 0.3 ? 20 ? 3 ? 1.0 ? 10 30 10 3 common source v ds = ? 10 v pulse test 5 www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ380 2007-02-01 4 case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc ? 4 0 ? 80 160 80 ? 40 40 ? 1 ? 3 0 120 common source v ds = ? 10 v i d = ? 1 ma pulse test ? 2 drain power dissipation p d (w) case temperature tc (c) p d ? tc gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 0 0 40 80 120 160 10 20 30 40 0 0 ? 40 ? 100 100 40 ? 20 ? 60 ? 80 20 60 80 v ds v gs ? 20 v v dd = ? 80 v ? 40 v 0 ? 8 ? 20 ? 4 ? 12 ? 16 common source i d = ? 12 a tc = 25c pulse test ? 8 0 ? 80 160 40 ? 40 80 120 common source pulse test i d = ? 8 a ? 2, ? 4 ? 2 ? 4 v gs = ? 4 v v gs = ? 10 v 0 0.1 0.2 0.3 0.4 0.5 ? 0.3 01.0 0.8 0.2 common source tc = 25c pulse test 0, 1 ? 1 v gs = ? 10 v 0.6 ? 1 ? 3 ? 10 ? 30 0.4 ? 2 ? 3 ? 5 ? 0.5 ? 5 30 ? 0.1 ? 100 ? 10 ? 0.3 c rss ? 3 100 300 3000 ? 1 c oss c iss ? 30 common source v gs = 0 v f = 1 mhz tc = 25c 1000 5000 50 500 www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ380 2007-02-01 5 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) avalanche energy e as (mj) drain-source voltage v ds (v) safe operating area drain current i d (a) channel temperature (initial) t ch (c) e as ? t ch 0 25 200 500 150 75 100 300 400 50 100 125 test circuit wave form i ar b vdss v dd v ds r g = 25 v dd = ?25 v, l = 2.94 mh ? ? ? ? ? ? ? ? ? = vb b li 2 1 dd vdss vdss 2 as ?15 v 15 v 0.003 100 m 10 m 0.01 1 1 10 0.005 0.3 3 0.03 0.5 0.05 0.1 10 100 1 m duty = 0.5 0.02 0.2 0.1 0.05 single pulse 0.01 t p dm t duty = t/t r th (ch-c) = 3.57c/w ? 0.1 ? 1 ? 3 ? 10 ? 30 * : single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i d max (continuous) i c max (pulsed) * v dss max 1 ms * 10 ms * 100 s* dc operation tc = 25c ? 100 ? 300 ? 0.3 ? 0.5 ? 1 ? 3 ? 5 ? 10 ? 30 ? 50 ? 100 www.datasheet.co.kr datasheet pdf - http://www..net/
2sJ380 2007-02-01 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. www.datasheet.co.kr datasheet pdf - http://www..net/
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