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rf & protection devices data sheet revision 3.0, 2010-11-08 BGA748N16 high linearity quad-band umts lna (2100, 1900, 900, 800 mhz)
edition 2010-11-08 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGA748N16 high linearity quad-band umts lna data sheet 3 revision 3.0, 2010-11-08 trademarks of infineon technologies ag aurix?, bluemoon?, c166?, ca npak?, cipos?, cipurse?, comn eon?, econopack?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobri dge?, econodual?, econopim?, eicedriver?, eupec?, fcos?, hitfe t?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, primarion?, primepack?, primestack?, pr o-sil?, profet?, rasic?, re versave?, satric?, sieget?, sindrion?, sipmos?, smarti?, smartlew is?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?, x-go ld?, x-pmu?, xmm?, xposys?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-10-26 BGA748N16 high linearity quad-band umts lna (2100, 1900, 900, 800 mhz) revision history: 2010-11-08, revision 3.0 previous revision: page subjects (major cha nges since last revision)
BGA748N16 high linearity quad-band umts lna table of contents data sheet 4 revision 3.0, 2010-11-08 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.5 band select / gain control truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.6 supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.7 logic signal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.8 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.9 measured rf characteristics umts band v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.10 measured rf characteristics umts band v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.11 measured rf characteristics umts band v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.12 measured rf characteristics umts band viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.13 measured rf characteristics umts band viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.14 measured rf characteristics umts band viii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.15 measured rf characteristics umts band ii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.16 measured rf characteristics umts band ii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2.17 measured rf characteristics umts band ii . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2.18 measured rf characteristics umts band i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.19 measured rf characteristics umts band i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2.20 measured rf characteristics umts band i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.1 umts bands i, ii, v and viii application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 3.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.3 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4.2 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 table of contents
BGA748N16 high linearity quad-band umts lna list of figures data sheet 5 revision 3.0, 2010-11-08 figure 1 block diagram of quad-band lna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 3 cross-section view of application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 4 detail of application board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 figure 5 recommended footprint and stencil layout for the tsnp-16-1 package . . . . . . . . . . . . . . . . . . 29 figure 6 package outline (top, side and bottom view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 list of figures
BGA748N16 high linearity quad-band umts lna list of tables data sheet 6 revision 3.0, 2010-11-08 table 1 absolute maximum ra tings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4 dc characteristics, t a =-30 ... 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5 band select truth table, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 6 gain control truth table, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 7 typical switching times; t a = -30 ... 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 8 typical characteristics 880 mhz band, t a =-30c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 9 typical characteristics 880 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 10 typical characteristics 880 mhz band, t a =85c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 11 typical characteristics 940 mhz band, t a =-30c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 12 typical characteristics 940 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 13 typical characteristics 940 mhz band, t a =85c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 14 typical characteristics 1960 mhz band, t a = -30 c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 19 table 15 typical characteristics 1960 mhz band, t a = 25 c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 20 table 16 typical characteristics 1960 mhz band, t a = 85 c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 21 table 17 typical characteristics 2140 mhz band, t a = -30 c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 22 table 18 typical characteristics 2140 mhz band, t a = 25 c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 23 table 19 typical characteristics 2140 mhz band, t a = 85 c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 24 table 20 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table 21 pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 list of tables
product name package chip marking BGA748N16 tsnp-16-1 t1541 bga748 high linearity quad -band umts lna (2100, 1900, 900, 800 mhz) BGA748N16 data sheet 7 revision 3.0, 2010-11-08 1 features main features: ? gain: 16 / -8 db typ. in high / low gain mode (all bands) ? noise figure: 1.1 db typ. in high gain mode ? supply current: 4.0 / 0.75 ma typ in high / low gain mode (all bands) ? standby mode (< 2 a typ.) ? output internally matched to 50 ? ? inputs pre-matched to 50 ? ? 2 kv hbm esd protection ? low external component count ? small leadless tsnp-16-1 package (2.3 x 2.3 x 0.39 mm) ? pb-free (rohs compliant) package description the BGA748N16 is a highly flexible, high linearity q uad-band (2100, 1900, 900, 800 mhz) low noise amplifier mmic for worldwide use. based on infineon?s proprietar y and cost-effective sige:c technology, the BGA748N16 uses an advanced biasing concept in order to achieve high linearity. the device features dynami c gain control, temperatur e stabilization, standby mode and 2 kv esd protection on-chip as well as matching off chip. because the matching is off chip, different umts bands can be easily applied. note: umts bands i / ii / v / viii is the standard band co mbination for this product requiring no external output matching network.
BGA748N16 high linearity quad-band umts lna features data sheet 8 revision 3.0, 2010-11-08 figure 1 block diagram of quad-band lna %*$1b&klsb%o'yvg %ldvlqj /rjlf &lufxlwu\ 9&& 9*6 5)287 5)287 5)287 9(1 9(1 5),1 5),1 5),1 5),1 921 5)*1' 5)*1' 55() 5)287
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 9 revision 3.0, 2010-11-08 2 electrical characteristics 2.1 absolute maximum ratings attention: stresses exceeding the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. typ. max. supply voltage v cc -0.3 ? 3.6 v ? supply current i cc ??10ma? pin voltage v pin -0.3 ? v cc +0.3 v all pins except rf input pins. pin voltage rf input pins v rfin -0.3 ? 0.9 v ? rf input power p rfin ??4dbm? junction temperature t j ??150c? ambient temperature range t a -30 ? 85 c ? storage temperature range t stg -65 ? 150 c ? table 2 thermal resistance parameter symbol values unit note / test condition min. typ. max. thermal resistance junction to soldering point r thjs ??67k/w? table 3 esd integrity parameter symbol values unit note / test condition min. typ. max. esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm ? 2000 ? v all pins
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 10 revision 3.0, 2010-11-08 2.4 dc characteristics 2.5 band select / gain control truth table table 4 dc characteristics, t a =-30 ... 85 c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.6 2.8 3.0 v ? supply current high gain mode i cchg ?4.4 3.8 ? ma band 1 all other bands supply current low gain mode i cclg ? 0.75 ? ma all bands supply current standby mode i ccoff ?0.12.0 a? logic level high v hi 1.5 2.8 ? v all logic pins logic level low v lo ?0.00.5v logic currents i lo ?0.1? a all logic pins i hi ?5.0? a table 5 band select truth table, v cc =2.8v band 1 band 2 band 5 band 8 stand-by ven1 h h l l l ven2hlhll vonhhhhl table 6 gain control truth table, v cc =2.8v high gain low gain vgs h l
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 11 revision 3.0, 2010-11-08 2.6 supply current characteristics supply current high gain mode versus resistance of reference resistor r ref (see figure 2 on page 25; low gain mode supply current is independent of reference resistor). supply current band 5 i cc =f ( r ref ) v cc = 2.8 v, t a =25c supply current band 8 i cc =f ( r ref ) v cc = 2.8 v, t a =25c supply current band 2 i cc =f ( r ref ) v cc = 2.8 v, t a =25c supply current band 1 i cc =f ( r ref ) v cc = 2.8 v, t a =25c 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 r ref [k ? ] i cc [ma]
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 12 revision 3.0, 2010-11-08 2.7 logic signal characteristics current consumption of logic inputs ven1, ven2, vgs, von 2.8 switching times logic currents i log =f( v log ) v cc = 2.8 v, t a =25c table 7 typical switching times; t a = -30 ... 85 c parameter symbol values unit note / test condition min. typ. max. gainstep settling time t gs ?1? s switching lg ? hg all bands bandselect settling time t bs ?1? s switching from any band to a different band (pins ven1,2) power on settling time t on ?1? s switching from standby mode to on mode (pin von) 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 v log [v] i log [a]
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 13 revision 3.0, 2010-11-08 2.9 measured rf characteristics umts band v table 8 typical characteristics 880 mhz band, t a =-30c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 869 ? 894 mhz ? current consumption i cchg ? 3.1 ? ma high gain mode i cclg ? 0.70 ? ma low gain mode gain s 21hg ? 16.5 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -38 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 0.9 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-15?db 50 ?, high gain mode s 11lg ?-17?db 50 ?, low gain mode output return loss 2) s 22hg ?-15?db 50 ? , high gain mode s 22lg ?-11?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.5 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? 1 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-7 14 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 14 revision 3.0, 2010-11-08 2.10 measured rf characteristics umts band v table 9 typical characteristics 880 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 869 ? 894 mhz ? current consumption i cchg ? 3.8 ? ma high gain mode i cclg ? 0.75 ? ma low gain mode gain s 21hg ? 16.2 ? db high gain mode s 21lg ? -8.0 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -38 ? db high gain mode s 12lg ? -8.0 ? db low gain mode noise figure nf hg ? 1.2 ? db high gain mode nf lg ? 8.0 ? db low gain mode input return loss 2) s 11hg ?-14?db 50 ?, high gain mode s 11lg ?-15?db 50 ?, low gain mode output return loss 2) s 22hg ?-20?db 50 ? , high gain mode s 22lg ?-11?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.7 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? -1 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 12 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 15 revision 3.0, 2010-11-08 2.11 measured rf characteristics umts band v table 10 typical characteristics 880 mhz band, t a =85c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 869 ? 894 mhz ? current consumption i cchg ? 4.6 ? ma high gain mode i cclg ? 0.80 ? ma low gain mode gain s 21hg ? 15.6 ? db high gain mode s 21lg ? -8.5 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -38 ? db high gain mode s 12lg ? -8.5 ? db low gain mode noise figure nf hg ? 1.7 ? db high gain mode nf lg ? 8.5 ? db low gain mode input return loss 2) s 11hg ?-17?db 50 ?, high gain mode s 11lg ?-14?db 50 ?, low gain mode output return loss 2) s 22hg ?-20?db 50 ? , high gain mode s 22lg ?-11?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >3.2 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -8 ? dbm high gain mode ip 1dblg ? -4 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 6 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 16 revision 3.0, 2010-11-08 2.12 measured rf characteristics umts band viii table 11 typical characteristics 940 mhz band, t a =-30c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 925 ? 960 mhz ? current consumption i cchg ? 3.1 ? ma high gain mode i cclg ? 0.70 ? ma low gain mode gain s 21hg ? 16.5 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -35 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 0.9 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-15?db 50 ?, high gain mode s 11lg ?-13?db 50 ?, low gain mode output return loss 2) s 22hg ?-19?db 50 ? , high gain mode s 22lg ?-13?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.5 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? 3 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-7 14 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 17 revision 3.0, 2010-11-08 2.13 measured rf characteristics umts band viii table 12 typical characteristics 940 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 925 ? 960 mhz ? current consumption i cchg ? 3.8 ? ma high gain mode i cclg ? 0.75 ? ma low gain mode gain s 21hg ? 16.2 ? db high gain mode s 21lg ? -8.0 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -8.0 ? db low gain mode noise figure nf hg ? 1.2 ? db high gain mode nf lg ? 8.0 ? db low gain mode input return loss 2) s 11hg ?-16?db 50 ?, high gain mode s 11lg ?-13?db 50 ?, low gain mode output return loss 2) s 22hg ?-28?db 50 ? , high gain mode s 22lg ?-12?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.8 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -6 ? dbm high gain mode ip 1dblg ? 1 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 12 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 18 revision 3.0, 2010-11-08 2.14 measured rf characteristics umts band viii table 13 typical characteristics 940 mhz band, t a =85c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 925 ? 960 mhz ? current consumption i cchg ? 4.6 ? ma high gain mode i cclg ? 0.80 ? ma low gain mode gain s 21hg ? 15.6 ? db high gain mode s 21lg ? -8.5 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -8.5 ? db low gain mode noise figure nf hg ? 1.7 ? db high gain mode nf lg ? 8.5 ? db low gain mode input return loss 2) s 11hg ?-17?db 50 ?, high gain mode s 11lg ?-12?db 50 ?, low gain mode output return loss 2) s 22hg ?-26?db 50 ? , high gain mode s 22lg ?-12?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >3.2 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -9 ? dbm high gain mode ip 1dblg ? -3 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-5 5 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 19 revision 3.0, 2010-11-08 2.15 measured rf characteristics umts band ii table 14 typical characteristics 1960 mhz band, t a = -30 c, v cc = 2.8 v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 1930 ? 1990 mhz ? current consumption i cchg ? 3.1 ? ma high gain mode i cclg ? 0.70 ? ma low gain mode gain s 21hg ? 17.1 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -35 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 0.8 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-21?db 50 ?, high gain mode s 11lg ?-24?db 50 ?, low gain mode output return loss 2) s 22hg ?-29?db 50 ? , high gain mode s 22lg ?-15?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -8 ? dbm high gain mode ip 1dblg ? 2 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-8 17 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 20 revision 3.0, 2010-11-08 2.16 measured rf characteristics umts band ii table 15 typical characteristics 1960 mhz band, t a = 25 c, v cc = 2.8 v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 1930 ? 1990 mhz ? current consumption i cchg ? 4.0 ? ma high gain mode i cclg ? 0.75 ? ma low gain mode gain s 21hg ? 16.5 ? db high gain mode s 21lg ? -8.0 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -8.0 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 8.0 ? db low gain mode input return loss 2) s 11hg ?-20?db 50 ?, high gain mode s 11lg ?-17?db 50 ?, low gain mode output return loss 2) s 22hg ?-32?db 50 ? , high gain mode s 22lg ?-15?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.6 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -8 ? dbm high gain mode ip 1dblg ? 2 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-7 17 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 21 revision 3.0, 2010-11-08 2.17 measured rf characteristics umts band ii table 16 typical characteristics 1960 mhz band, t a = 85 c, v cc = 2.8 v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 1930 ? 1990 mhz ? current consumption i cchg ? 4.9 ? ma high gain mode i cclg ? 0.80 ? ma low gain mode gain s 21hg ? 15.9 ? db high gain mode s 21lg ? -8.5 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -8.5 ? db low gain mode noise figure nf hg ? 1.5 ? db high gain mode nf lg ? 8.5 ? db low gain mode input return loss 2) s 11hg ?-17?db 50 ?, high gain mode s 11lg ?-14?db 50 ?, low gain mode output return loss 2) s 22hg ?-23?db 50 ? , high gain mode s 22lg ?-16?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >3.1 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -9 ? dbm high gain mode ip 1dblg ? 0 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 10 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 22 revision 3.0, 2010-11-08 2.18 measured rf characteristics umts band i table 17 typical characteristics 2140 mhz band, t a = -30 c, v cc = 2.8 v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 2110 ? 2170 mhz ? current consumption i cchg ? 3.6 ? ma high gain mode i cclg ? 0.70 ? ma low gain mode gain s 21hg ? 18.0 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test.. s 12hg ? -36 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 0.8 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-18?db 50 ?, high gain mode s 11lg ?-18?db 50 ?, low gain mode output return loss 2) s 22hg ?-18?db 50 ? , high gain mode s 22lg ?-10?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.2 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -9 ? dbm high gain mode ip 1dblg ? 1 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-8 16 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 23 revision 3.0, 2010-11-08 2.19 measured rf characteristics umts band i table 18 typical characteristics 2140 mhz band, t a = 25 c, v cc = 2.8 v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 2110 ? 2170 mhz ? current consumption i cchg ? 4.4 ? ma high gain mode i cclg ? 0.75 ? ma low gain mode gain s 21hg ? 17.4 ? db high gain mode s 21lg ? -8.0 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test.. s 12hg ? -36 ? db high gain mode s 12lg ? -8.0 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 8.0 ? db low gain mode input return loss 2) s 11hg ?-20?db 50 ?, high gain mode s 11lg ?-17?db 50 ?, low gain mode output return loss 2) s 22hg ?-19?db 50 ? , high gain mode s 22lg ?-11?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.4 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -10 ? dbm high gain mode ip 1dblg ? 2 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 16 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna electrical characteristics data sheet 24 revision 3.0, 2010-11-08 2.20 measured rf characteristics umts band i table 19 typical characteristics 2140 mhz band, t a = 85 c, v cc = 2.8 v 1) 1) performance based on application circuit in figure 2 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range 2110 ? 2170 mhz ? current consumption i cchg ? 5.3 ? ma high gain mode i cclg ? 0.80 ? ma low gain mode gain s 21hg ? 16.8 ? db high gain mode s 21lg ? -8.5 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test.. s 12hg ? -36 ? db high gain mode s 12lg ? -8.5 ? db low gain mode noise figure nf hg ? 1.4 ? db high gain mode nf lg ? 8.5 ? db low gain mode input return loss 2) s 11hg ?-23?db 50 ?, high gain mode s 11lg ?-16?db 50 ?, low gain mode output return loss 2) s 22hg ?-17?db 50 ? , high gain mode s 22lg ?-11?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.7 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -11 ? dbm high gain mode ip 1dblg ? 1 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-5 11 ? dbm high gain mode low gain mode
BGA748N16 high linearity quad-band umts lna application circuit and block diagram data sheet 25 revision 3.0, 2010-11-08 3 application circuit and block diagram 3.1 umts bands i, ii, v and viii application circuit schematic figure 2 application circuit with chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 20 bill of materials part number part type manufacturer size comment l1 ... l4 chip inductor various 0402 wirewound, q 50 c1 ... c9 chip capacitor various 0402 r ref chip resistor various 0402 band ii band i band v c1 1. 8pf vcc = 2.8 v vgs = 0 / 2.8 v rfin ven2 = 0 / 2.8 v l1 2.7nh rfout band i c9 10nf r ref 27k ? c2 8. 2pf rfin rfin band viii ven1 = 0 / 2.8 v rfout band ii rfout band v rfin von = 0 / 2.8 v 12 11 10 13 14 15 16 1 2 3 4 5 6 7 8 9 biasing & logic circuitry vcc vgs rfout2 rfout1 rfout5 ven1 ven2 rfin8 rfin2 rfin1 rfin5 von rfgnd1 rfgnd2 rref rfout8 rfout band viii 0 gnd c3 10pf l2 2.2nh c4 18pf c5 2.4pf l3 8.2nh c6 18pf c7 2.4pf l4 7.5nh c8 18pf BGA748N16_appl_bld.vsd
BGA748N16 high linearity quad-band umts lna application circuit and block diagram data sheet 26 revision 3.0, 2010-11-08 3.2 pin description table 21 pin definition and function pin no. name function 0 gnd ground connection for lna and control circuitry (package paddle) 1 rfout8 lna output umts band viii 2 rfout5 lna output umts band v 3 rfout1 lna output umts band i 4 rfout2 lna output umts band ii 5 rref bias current reference resistor (high gain mode) 6 vgs gain step control voltage 7 vcc supply voltage 8 rfgnd1 lna emitter ground umts band i 9 von power on control voltage 10 rfin2 lna input umts band ii 11 rfin1 lna input umts band i 12 rfgnd2 lna emitter ground umts band ii 13 rfin5 lna input umts band v 14 rfin8 lna input umts band viii 15 ven2 band select control voltage 16 ven1 band select control voltage
BGA748N16 high linearity quad-band umts lna application circuit and block diagram data sheet 27 revision 3.0, 2010-11-08 3.3 application board note: top layer thickness: 0.2 mm, bo ttom layer thickness: 0. 8 mm, 17 mm cu metallization, gold plated. board size: 32 x 45mm. figure 3 cross-section view of application board %*$1b$ssb%rdugyvg 7rs/d\huwrsylhz %rwwrp/d\huwrsylhz 0lggoh/d\huwrsylhz %*$1b&urvvb6hfwlrqb9lhzyvg pp&rsshu pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu pp)5 pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu
BGA748N16 high linearity quad-band umts lna application circuit and block diagram data sheet 28 revision 3.0, 2010-11-08 figure 4 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. %*$1b$ssb%rdgbghwdloyvg
BGA748N16 high linearity quad-band umts lna physical characteristics data sheet 29 revision 3.0, 2010-11-08 4 physical characteristics 4.1 package footprint figure 5 recommended footprint and stencil layout for the tsnp-16-1 package 7613)3yvg
BGA748N16 high linearity quad-band umts lna physical characteristics data sheet 30 revision 3.0, 2010-11-08 4.2 package dimensions figure 6 package outline (top, side and bottom view) 761332yvg
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