55GN01SA no. a1115-1/6 features high cutoff frequency : f t = 5.5ghz typ. high gain : ? s21e ? 2 =10db typ (f=1ghz). ultrasmall package permitting applied sets to be small and slim. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c 100 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t 1v ce =3v, i c =5ma 3.0 4.5 ghz f t 2v ce =5v, i c =20ma 5.5 ghz output capacitance cob v cb =10v, f=1mhz 1.0 1.2 pf reverse transfer capacitance cre v cb =10v, f=1mhz 0.6 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =20ma, f=1ghz 7 10 db noise figure nf v ce =3v, i c =5ma, f=1ghz, z s =z l =50 1.9 db marking : zd sanyo semiconductors data sheet www.semiconductor-sanyo.com/network ordering number : ena1115 o2908ab ms im tc-00001679 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 55GN01SA npn epitaxial planar silicon transistor uhf wide-band low-noise amplifier applications
55GN01SA no. a1115-2/6 012345678910 0 5 10 15 20 25 30 35 40 45 50 it06252 i b =0 ma 0.30ma 0.25ma 0.20ma 0.15ma 0.10ma 0.05ma 0 0.2 0.4 0.6 0.8 1.0 1.2 0 80 70 60 50 40 30 20 10 it06253 v ce =5v it06254 100 2 7 5 3 1.0 357 2357 10 23 57 100 v ce =5v 1.0 5 7 10 2 3 1.0 23 57 23 57 10 100 it06693 v ce =5v collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce base-to-emitter voltage, v be -- v collector current, i c -- ma i c -- v be h fe -- i c collector current, i c -- ma dc current gain, h fe f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz package dimensions unit : mm (typ) 7027-002 3 1 2 1.6 1.6 0.75 0.8 0.4 0.4 0.5 0.5 0.6 0.2 0.3 0.1 0 to 0.1 0.1 min 1 : base 2 : emitter 3 : collector sanyo : smcp
55GN01SA no. a1115-3/6 0 20 40 60 80 100 120 140 160 0 it06697 20 40 60 80 100 120 collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c it06696 1.0 1.5 3.0 2.0 2.5 1.0 23 57 10 it05674 v ce =3v f=1ghz z o =50 3 1.0 5 7 2 3 0.1 23 57 1.0 23 57 10 23 f=1mhz cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf nf -- i c collector current, i c -- ma noise figure, nf -- db 2 4 6 8 10 12 1.0 23 57 23 57 10 100 it06694 v ce =5v f=1ghz it06695 3 1.0 5 7 2 3 0.1 23 57 1.0 23 57 10 23 f=1mhz collector current, i c -- ma ? s21e ? 2 -- i c forward transfer gain, ? s21e ? 2 -- db cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf
55GN01SA no. a1115-4/6 s parameters (common emitter) v ce =5v, i c =5ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.818 --45.11 12.945 149.89 0.040 68.19 0.882 --23.66 200 0.723 --79.29 10.378 128.84 0.063 53.36 0.708 --38.25 400 0.619 --119.57 6.589 105.34 0.082 43.85 0.504 --50.00 600 0.590 --140.45 4.732 92.21 0.094 44.40 0.422 --54.83 800 0.566 --153.95 3.677 82.43 0.106 46.39 0.387 --58.60 1000 0.553 --163.02 3.000 74.67 0.118 48.68 0.369 --62.43 1200 0.546 --170.25 2.547 67.70 0.132 51.04 0.368 --65.91 1400 0.536 --176.36 2.214 61.57 0.145 53.10 0.374 --70.19 1600 0.529 178.47 1.979 55.95 0.162 54.51 0.376 --73.95 1800 0.518 173.34 1.790 50.69 0.178 55.69 0.387 --77.80 2000 0.515 168.18 1.642 45.28 0.197 56.79 0.393 --81.33 2200 0.506 163.01 1.499 40.79 0.216 56.84 0.403 --85.56 2400 0.502 158.27 1.394 36.26 0.236 56.80 0.415 --89.57 2600 0.496 153.59 1.299 32.33 0.257 56.63 0.423 --93.86 2800 0.495 148.84 1.220 28.79 0.281 56.40 0.431 --98.20 3000 0.488 144.62 1.152 25.31 0.307 55.34 0.440 --101.75 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.695 --65.56 19.851 138.84 0.033 62.31 0.773 --33.54 200 0.600 --104.03 13.662 117.33 0.049 51.12 0.552 --48.13 400 0.540 --139.63 7.785 97.63 0.065 51.35 0.370 --56.25 600 0.532 --154.82 5.405 87.15 0.081 53.63 0.312 --60.19 800 0.522 --165.18 4.152 79.02 0.099 57.04 0.294 --64.03 1000 0.517 --171.99 3.356 72.24 0.115 59.04 0.283 --67.23 1200 0.511 --177.34 2.845 66.21 0.134 59.83 0.284 --70.66 1400 0.507 177.38 2.469 60.71 0.153 59.98 0.294 --74.85 1600 0.498 173.40 2.199 55.55 0.172 60.01 0.300 --78.33 1800 0.493 169.08 1.991 50.67 0.191 59.81 0.309 --82.14 2000 0.489 164.42 1.824 45.74 0.212 59.31 0.315 --85.02 2200 0.483 159.69 1.665 41.25 0.234 58.55 0.327 --88.98 2400 0.479 155.72 1.549 36.93 0.254 57.22 0.337 --92.57 2600 0.474 151.50 1.446 32.96 0.272 56.69 0.345 --96.49 2800 0.474 146.89 1.358 29.71 0.296 55.40 0.353 --100.19 3000 0.469 142.97 1.283 26.10 0.318 54.29 0.364 --103.38
55GN01SA no. a1115-5/6 s parameters (common emitter) v ce =5v, i c =20ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.570 --89.86 25.811 127.74 0.027 57.86 0.639 --42.89 200 0.520 --126.23 15.701 108.51 0.038 55.16 0.416 --54.85 400 0.503 --153.83 8.426 92.69 0.057 59.71 0.276 --59.96 600 0.506 --164.64 5.772 83.96 0.077 63.42 0.242 --62.99 800 0.504 --172.52 4.408 76.83 0.098 64.34 0.234 --67.02 1000 0.498 --177.66 3.555 70.62 0.116 64.27 0.228 --70.93 1200 0.496 177.98 3.013 65.15 0.139 64.39 0.235 --74.09 1400 0.492 173.75 2.611 59.99 0.158 63.46 0.246 --78.62 1600 0.488 170.09 2.319 55.01 0.179 63.02 0.252 --81.39 1800 0.481 166.42 2.096 50.36 0.200 61.78 0.262 --85.56 2000 0.481 162.19 1.917 45.65 0.221 60.80 0.268 --87.90 2200 0.472 158.01 1.760 41.21 0.240 59.60 0.283 --91.47 2400 0.472 154.06 1.633 37.24 0.260 57.83 0.293 --94.81 2600 0.467 149.87 1.523 33.18 0.280 56.85 0.300 --98.53 2800 0.467 145.82 1.434 29.86 0.304 55.35 0.311 --102.06 3000 0.462 142.08 1.354 26.43 0.326 53.94 0.318 --104.23 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.523 --103.16 27.751 122.53 0.024 59.02 0.569 --46.47 200 0.498 --136.49 16.132 104.97 0.035 57.80 0.361 --56.04 400 0.498 --159.57 8.503 90.63 0.054 63.85 0.244 --59.31 600 0.503 --168.52 5.802 82.53 0.076 67.20 0.219 --62.34 800 0.500 --175.28 4.429 75.68 0.097 66.04 0.215 --66.55 1000 0.499 --179.85 3.582 69.78 0.118 66.40 0.215 --70.37 1200 0.498 176.25 3.013 64.35 0.138 66.22 0.222 --73.72 1400 0.494 172.08 2.615 59.21 0.161 65.47 0.233 --78.23 1600 0.489 169.05 2.324 54.35 0.180 64.05 0.241 --81.44 1800 0.484 165.09 2.102 49.78 0.200 62.79 0.250 --85.19 2000 0.483 161.02 1.925 45.03 0.222 61.56 0.258 --87.77 2200 0.476 157.15 1.762 40.66 0.243 60.04 0.273 --90.81 2400 0.476 153.18 1.634 36.62 0.263 58.71 0.286 --94.60 2600 0.471 149.16 1.524 32.74 0.283 57.48 0.294 --98.35 2800 0.471 145.15 1.436 29.38 0.307 55.99 0.302 --101.47 3000 0.467 141.40 1.355 25.99 0.329 54.46 0.312 --103.95
55GN01SA no. a1115-6/6 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of october, 2008. specifications and information herein are subject to change without notice.
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