general description silicon npn high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose quick reference data limiting values symbol parameter conditions typ max unit v cbo collector-emitter voltage peak value v be = 0v - 70 v v ceo collector-emitter voltage (open base) - 70 v i c collector current (dc) - 10 a i cm collector current peak value - a p tot total power dissipation t mb 25 - 80 w v cesat collector-emitter saturation voltage i c = 4.0a; i b =0.4a - 2v v f diode forward voltage i f = 3.5a 1.5 2.0 v t f fall time i c =4a,i b1 =-i b2 =0.4a,v cc =30v 0.4 1 .0- s symbol parameter conditions min max unit v cesm collector-emitter voltage peak value v be = 0v - 70 v v ceo collector-emitter voltage (open base) - 70 v v ebo emitter-base oltage (open colloctor) 5 v i c collector current (dc) - 10 a i b base current (dc) - 2.5 a p tot total power dissipation tmb 25 -80w t st g storage temperature -55 150 t j junction temperature - 150 symbol parameter conditions typ max unit i cbo collector-base cut-off current v cb =70v - 0.2 ma i ebo emitter-base cut-off current v eb =5v - 0.2 ma v ( br ) ceo collector-emitter breakdown voltage i c =1ma 70 v v cesat collector-emitter saturation voltages i c = 4.0a; i b = 0.4a - 3 v h fe dc current gain i c = 1a; v ce = 5v 50 240 f t transition frequency at f = 5mhz i c = 1a; v ce = 12v 10 - mhz c c collector capacitance at f = 1mhz v cb = 10v 350 - pf t on on times i c =4a,i b1 =-i b2 =0.4a,v cc =30v 0.3 u s t s tum-off storage time i c =4a,i b1 =-i b2 =0.4a,v cc =30v 2.5 u s t f fall time i c =4a,i b1 =-i b2 =0.4a,v cc =30v 0.4 u s electrical characteristics to-3p(i)d wing shing computer components co., (h.k.)ltd. tel:(852)2341 9276 fax:(852)2797 8153 homepage: http://www.wingshing.com e-mail: wsccltd@hkstar.com
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