www.siliconstandard.com 1 of 5 n-channel enhancement-mode power mosfet low gate-charge bv dss 20v simple drive requirement r ds(on) 75mw fast switching i d 3.5a description the SSM2314GN is in a sot-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. this device is suitable for low-voltage applications such as dc/dc converters and and g d s absolute maximum ratings symbol units v ds v gs v i d @ t a =25c i d @ t a =70c i dm p d @ t a =25c w/c t stg t j symbol value unit r qja maximum thermal resistance, junction-ambient 3 90 c/w parameter rating drain-source voltage 20 v gate-source voltage continuous drain current 3 3.5 a continuous drain current 3 2.8 a pulsed drain current 1,2 10 a operating junction temperature range -55 to 150 c linear derating factor 0.01 storage temperature range total power dissipation 1.38 w -55 to 150 c thermal data parameter 12 pb-free; rohs compliant. d g s sot-23-3 general switching applications. SSM2314GN 4/16/2005 rev.2.1
www.siliconstandard.com 2 of 5 ssm231 4 gn 4/16/2005 rev.2.1 electrical characteristics (at tj = 25c unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v d bv dss / d t j breakdown voltage temperature coefficient reference to 25c, i d =1ma - 0.02 - v/c r ds(on) static drain-source on-resistance v gs =4.5v, i d =3.5a - - 75 mw v gs =2.5v, i d =1.2a - - 125 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =5v, i d =3a - 7 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v ,v gs =0v - - 10 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge 2 i d =3a - 4 7 nc q gs gate-source charge v ds =16v - 0.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 2 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3w , v gs =5v - 10 - ns t f fall time r d =15w -3- ns c iss input capacitance v gs =0v - 230 370 pf c oss output capacitance v ds =20v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf r g gate resistance f=1.0mhz - 1.1 1.7 w source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =3a, v gs =0v, - 16 - ns q rr reverse recovery charge di/dt=100a/s - 8 - nc notes: 1.pulse width limited by maximum junction temperature. 2.pulse width < 300us, duty cycle < 2%. 3.surface-mounted on 1 in 2 copper pad on fr4 board , t < 10sec ; 270c/w when mounted on minimum copper pad.
www.siliconstandard.com 3 of 5 SSM2314GN 4/16/2005 rev.2.1 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature 0 5 10 15 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =1.5v 5.0v 4.5v 3.0v 2.5v 0 5 10 15 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0v 4.5v 3.0 v 2.5v v g = 1 .5v 40 60 80 100 246810 v gs , gate-to-source voltage (v) r ds(on) (m w ) i d =1.2a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 3.5 a v g =4.5v 0.5 0.6 0.7 0.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 1 2 3 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
www.siliconstandard.com 4 of 5 SSM2314GN 4/16/2005 rev.2.1 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge circuit 0 2 4 6 8 10 12 02468 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =10v v ds =12v v ds =16v 10 100 1000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270c/w t t 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0 5 10 15 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. www.siliconstandard.com 5 of 5 SSM2314GN 4/16/2005 rev.2.1
|
