SPD04P10P g sipmos ? power-transistor features ? p-channel ? enhancement mode ? normal level ? avalanche rated ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current i d,pulse v gs =-10 v, i d =-2.8 a avalanche energy, single pulse e as i d =-4 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c esd class jesd22-a114-hbm soldering temperature iec climatic category; din iec 68-1 55/175/56 -55 ... 175 20 260 c 1a (250 v to 500 v) -4 -2.8 38 value 57 -16 v ds -100 v r ds(on),max 1 ? i d -4 a product summary type package marking lead free packing SPD04P10P g pg-to252-3 04p10p yes non dry pg-to252-3 rev 1.5 page 1 2009-02-16 tape and reel information 1000 pcs / reel
SPD04P10P g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point r thjc - - 3.9 k/w thermal resistance, junction - ambient r thja minimal footprint, steady state --75 6 cm 2 cooling area 1) , steady state --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-380 a -2.1 -3.0 -4 zero gate voltage drain current i dss v ds =-100 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-100 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-10 v, i d =-2.8 a - 644 1000 m : transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-2.8 a 1.2 2.4 - s 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values rev 1.5 page 2 2009-02-16
SPD04P10P g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 240 319 pf output capacitance c oss -6282 reverse transfer capacitance c rss -2842 turn-on delay time t d(on) - 5.7 8.6 ns rise time t r - 8.6 13 turn-off delay time t d(off) -1421 fall time t f - 4.5 6.8 gate char g e characteristics 2) gate to source charge q gs - 1.4 1.8 nc gate to drain charge q gd -57 gate charge total q g -912 gate plateau voltage v plateau -6-v reverse diode diode continuous forward current i s - - -4.0 a diode pulse current i s,pulse - - 16.0 diode forward voltage v sd v gs =0 v, i f =-4 a, t j =25 c - -0.8 -1.2 v reverse recovery time t rr -7493ns reverse recovery charge q rr - 218 273 nc 2) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-50 v, v gs =- 10 v, i d =-4 a, r g =6 : v dd =-80 v, i d =-4 a, v gs =0 to -10 v v r =50 v, i f =| i s |, d i f /d t =100 a/s rev 1.5 page 3 2009-02-16
SPD04P10P g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); | v gs | -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 t p [s] z thjs [k/w] 0 5 10 15 20 25 30 35 40 0 40 80 120 160 t c [c] p tot [w] 0 1 2 3 4 0 40 80 120 160 t c [c] -i d [a] rev 1.5 page 4 2009-02-16
SPD04P10P g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -4.5 v -5 v -6 v -7 v -8 v -10 v -20 v 400 600 800 1000 1200 1400 1600 02468 -i d [a] r ds(on) [m ? ] 25 c 125 c 0 1 2 3 4 5 6 7 8 1357 -v gs [v] -i d [a] 0 1 2 3 4 02468 -i d [a] g fs [s] -4 v -4.5 v -5 v -6 v -7 v -8 v -10 v -20 v 0 1 2 3 4 5 6 7 8 0246810 -v ds [v] -i d [a] rev 1.5 page 5 2009-02-16
SPD04P10P g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-4 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-380 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 0 500 1000 1500 2000 2500 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m : ] ciss coss crss 10 3 10 2 10 1 0 5 10 15 20 25 -v ds [v] c [pf] typ. min. max. 0 1 2 3 4 5 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 175 c, typ 25 c, 98% 175 c, 98% 10 2 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 -v sd [v] i f [a] rev 1.5 page 6 2009-02-16
SPD04P10P g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 : v gs =f( q gate ); i d =-4 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a 90 95 100 105 110 115 120 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 0.1 1 10 1 10 100 1000 t av [s] -i av [a] 20 v 50 v 80 v 0 2 4 6 8 10 0246810 - q gate [nc] - v gs [v] rev 1. 5 page 7 2009-02-16
SPD04P10P g package outline: pg-to-252-3 v gs =-10 v, i d =-2.8 a rev 1.5 page 8 2009-02-16
. 5 page 9 2009-02-16 SPD04P10P g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appl ication of the device, infineon technologies hereby disclaims any and all warranties and liabilitie s of any kind, including without limitation, warranties of non-infringement of intellect ual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact t he nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
