3/20/98 ga200ts60u "half-bridge" igbt int-a-pak features v ces = 600 v v ce (on) typ. = 1.8v @v ge = 15v , i c = 200a parameter typ. max. units r q jc thermal resistance, junction-to-case - igbt 0.20 r q jc thermal resistance, junction-to-case - diode 0.35 c/w r q cs thermal resistance, case-to-sink - module 0.1 mounting torque, case-to-heatsink 4.0 n m mounting torque, case-to-terminal 1, 2 & 3 ? 3.0 weight of module 200 g thermal / mechanical characteristics ultra-fast tm speed igbt absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 200 i cm pulsed collector current ? 400 a i lm peak switching current ? 400 i fm peak diode forward current 400 v ge gate-to-emitter voltage 20 v v isol rms isolation voltage, any terminal to case, t = 1 min 2500 p d @ t c = 25c maximum power dissipation 625 w p d @ t c = 85c maximum power dissipation 325 t j operating junction temperature range -40 to +150 c t stg storage temperature range -40 to +125 ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode ? very low conduction and switching losses ? hexfred ? antiparallel diodes with ultra- soft recovery ? industry standard package ? ul approved benefits ? increased operating efficiency ? direct mounting to heatsink ? performance optimized for power conversion: ups, smps, welding ? lower emi, requires less snubbing preliminary ? generation 4 igbt technology . www.irf.com 1 pd -5.058b
ga200ts60u 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 903 1355 v cc = 400v, v ge = 15v q ge gate - emitter charge (turn-on) 125 188 nc i c = 135a q gc gate - collector charge (turn-on) 306 459 t j = 25c t d(on) turn-on delay time 342 r g1 = 27 w , r g2 = 0 w, t r rise time 194 ns i c = 200a t d(off) turn-off delay time 366 v cc = 360v t f fall time 213 v ge = 15v e on turn-on switching energy 12 mj e off (1) turn-off switching energy 16 e ts (1) total switching energy 28 39 c ies input capacitance 20068 v ge = 0v c oes output capacitance 1254 pf v cc = 30v c res reverse transfer capacitance 261 ? = 1 mhz t rr diode reverse recovery time 179 ns i c = 200a i rr diode peak reversecurrent 120 a r g1 = 27 w q rr diode recovery charge 10714 c r g2 = 0 w di (rec) m /dt diode peak rate of fall of recovery 1922 a/s v cc = 360v during t b di/dt = 1300a/s parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v ge = 0v, i c = 1ma v ce(on) collector-to-emitter voltage 1.8 2.2 v ge = 15v, i c = 200a 1.9 v v ge = 15v, i c = 200a, t j = 125c v ge(th) gate threshold voltage 3.0 6.0 i c = 1.25ma d v ge(th) / d t j temperature coeff. of threshold voltage -11 mv/c v ce = v ge , i c = 1.25ma g fe forward transconductance ? 175 s v ce = 25v, i c = 200a i ces collector-to-emitter leaking current 1.0 ma v ge = 0v, v ce = 600v 10 v ge = 0v, v ce = 600v, t j = 125c v fm diode forward voltage - maximum 3.7 v i f = 200a, v ge = 0v 3.7 i f = 200a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current 250 na v ge = 20v dynamic characteristics - t j = 125c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
ga200ts60u www.irf.com 3 0.1 1 10 100 0 20 40 60 80 100 120 140 f, fre q uenc y ( khz ) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 120 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 80s pulse width ge t = 25 c j t = 125 c j 1 10 100 1000 5.0 6.0 7.0 8.0 9.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 25v 80s pulse width ce t = 25 c j t = 125 c j
ga200ts60u 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 400 c i = a 200 c i = a 100 c 25 50 75 100 125 150 0 40 80 120 160 200 240 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 1 th jc therm al r esponse (z ) t , rectan g ular pulse duration ( sec ) a d = 0.50 0.20 0.10 0.05 0.02 0.01 sin g le pu lse (thermal response) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
ga200ts60u www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 10 20 30 40 50 20 25 30 35 40 r , gate resistance (ohm) total switching losses (mj) g v = 360v v = 15v t = 125 c i = 200a cc ge j c ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 1000 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 360v g ge cc i = a 400 c i = a 200 c i = a 100 c r g1 =27 w ;r g2 = 0 w 0 200 400 600 800 1000 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 135a cc c 1 10 100 0 10000 20000 30000 40000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c res c oes c ies
ga200ts60u 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - reverse bias soa fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 14 - typical stored charge vs. di f /dt 0 100 200 300 400 0 10 20 30 40 50 60 70 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 125 c v = 360v v = 15v g j cc ge r g1 =27 w ;r g2 = 0 w 0 100 200 300 400 500 600 0 100 200 300 400 500 600 700 ce safe operating area v = 20v t = 125c ge j v , collector-to-emitter volta g e ( v ) a v ce measured at terminal (peak voltage) 10 100 1000 1.0 2.0 3.0 4.0 5.0 6.0 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 25c t = 125c j j 0 5000 10000 15000 20000 500 1000 1500 2000 f di /dt - (a/s) rr q - (nc) r j j v = 360v t = 125c t = 25c i = 400a i = 200a i = 100a f f f
ga200ts60u www.irf.com 7 fig. 15 - typical reverse recovery vs. di f /dt fig. 16 - typical recovery current vs. di f /dt 75 100 125 150 175 200 225 500 1000 1500 2000 trr - (ns) f di /dt - ( a/ s ) i = 400a i = 200a i = 100a f f f r j j v = 360v t = 125c t = 25c 0 50 100 150 200 250 500 1000 1500 2000 f di /dt - ( a/ s ) rrm i - (a) i = 400a f i = 200a i = 100a f f r j j v = 360v t = 125c t = 25c
ga200ts60u 8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic dt 90% vge +vge eoff = fig. 17b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 17a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 17c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 17d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt vce ic dt
ga200ts60u www.irf.com 9 vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 18. clamped inductive load test circuit figure 19. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 17e. macro waveforms for figure 18a's test circuit
ga200ts60u 10 www.irf.com case outline int-a-pak world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 3/98 notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ? see fig. 17 ? for screws m5x0.8 ? pulse width 50s; single shot. dimensions are shown in millimeters (inches)
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