phase control thyristor H45TBXX symbol characteristics conditions t j ( 0 c) value unit blocking parameters v rrm repetitive peak reverse voltage 125 200-1600 v v drm repetitive peak off-stage voltage 125 200-1600 v i rrm repetitive peak reverse current v = v rrm 125 10 ma i drm repetitive peak off-state current v = v rrm 125 10 ma d v /d t rep. rate of change of voltage @ 67%v drm 125 600 v/ s conducting parameters i f(av) average on-state current 180 sine, 50h z , t c = 85 0 c 45 a i rms rms on-state current 70 a i tsm surge on-state current 800 a i 2 t i 2 t sine wave, 10ms without reverse voltage 125 3200 a 2 s v t peak on-state voltage drop on-state current = 150a 125 1.72 v v 0 threshold voltage 125 0.95 v r 0 on-state slope resistance 125 4.50 m di/dt repetitive rate of rise of current d ig /d t = 1a/s v gk = 1v 125 120 a/ s triggering parameters i gt gate trigger current v d = 5v 25 150 ma v gt gate trigger voltage 25 2.50 v i l latching current v d = 5v 25 400 ma i h holding current v d = 5v 25 300 ma p g ?peak maximum peak gate power pulse width 100 sec 30 w di/dt repetitive rate of rise of current 120 a/ s v fgm maximum forward gate voltage 12 v i fgm maximum forward gate current 10 a thermal & mechanical parameters r th (j-c) thermal impedance, 180 conduction, sine junction to case 0.60 0 c/w r th (c-hk) thermal impedance case to heatsink 0.20 0 c/w t j maximum permissible junction temperature 125 0 c t stg storage temperature range -40 - 125 0 c f mounting torque 4 nm w weight 45 gms h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 1 of 6
phase control thyristor H45TBXX all dimensions in mm h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 2 of 6
phase control thyristor H45TBXX on state power loss 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 45 50 i t(av) - a p t(av) - w 60 0 120 180 0 maximum permissible case temp 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50 i t(av) - a t case ( 0 c) 60 0 120 0 180 0 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 3 of 6
phase control thyristor H45TBXX max non repetitive surge current 0 100 200 300 400 500 600 700 800 900 0.01 0.1 1 10 time in sec i tsm - a transient thermal impedance junction to case 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.001 0.01 0.1 1 10 time in sec r th(j-c) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 4 of 6
phase control thyristor H45TBXX on state characteristics 0 20 40 60 80 100 120 140 160 180 200 220 240 00.511.522.533.5 v t - (v) i t(av ) - a gate trigger characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i g (av ) - a v g(v) - v v g i gt 25 0 c i gd 30 w (0.1ms ) p o(tp) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 5 of 6
phase control thyristor H45TBXX ordering information: - h 45 tb xx hirect make thyristor i f(av) = 45a tb ? with a pigtail v rrm = xx x 100 e.g.12 * 100 =1200v hind rectifiers ltd reserves the right to change the specifications without notice. this datasheet specifies technical information for semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. hind rectifiers ltd lake road bhandup (west) mumbai ? 400 078 tel: - +91 22 2596 8027/28/29/31 fax: - +91 22 2596 4114 e-mail: - marketing@hirect.com website: - www.hirect.com june-2008 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 6 of 6
|
