?2002 fairchild semiconductor corporation rev. b1, november 2002 j108/j109/j110/mmbfj108 absolute maximum ratings * t a =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter value units v dg drain-gate voltage 25 v v gs gate-source voltage -25 v i gf forward gate current 10 ma t j , t stg operating and storage junction temperature range -55 ~ +150 c symbol parameter test condition min. max. units off characteristics v (br)gss gate-source breakdwon voltage i g = -10 a, v ds = 0 -25 v i gss gate reverse current v gs = -15v, v ds = 0 v gs = -15v, v ds = 0, t a = 100 c -3.0 -200 na na v gs (off) gate-source cutoff voltage v ds = 15v, i d = 10na 108 109 110 -3.0 -2.0 -0.5 -10 -6.0 -4.0 v v v on characteristics i dss zero-gate voltage drain current * v ds = 15v, i gs = 0 108 109 110 80 40 10 ma ma ma r ds (on) drain-source on resistance v ds 0.1v, v gs = 0 108 109 110 8.0 12 18 ? ? ? small signal characteristics c dg (on) c sg (off) drain gate & source gate on capacitance v ds = 0, v gs = 0, f = 1.0mhz 85 pf c dg (on) drain-gate off capacitance v ds = 0, v gs = -10, f = 1.0mhz 15 pf c sg (off) source-gate off capacitance v ds = 0, v gs = -10, f = 1.0mhz 15 pf j108/j109/j110/mmbfj108 n-channel switch ? this device is designed for digital switching applications where very low on resistance is mandatory. ? sourced from process 58. 1. drain 2. source 3. gate 1 2 3 to-92 1 1. drain 2. source 3. gate supersot-3 marking: i8
?2002 fairchild semiconductor corporation rev. b1, november 2002 j108/j109/j110/mmbfj108 thermal characteristics t a =25 c unless otherwise noted * device mounted on fr-4 pcb 1.6? 1.6? 0.06" symbol parameter max. units j108 - 110 *mmbfj108 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r jc thermal resistance, junction to case 125 c/w r ja thermal resistance, junction to ambient 357 556 c/w
?2002 fairchild semiconductor corporation rev. b1, november 2002 j108/j109/j110/mmbfj108 typical characteristics figure 1. common drain-source figure 2. parameter interactions figure 3. common drain-source figure 4. common drain-source figure 5. normalized drain resistance vs bias voltage figure 6. noise voltage vs frequency common drain-source 0 0.4 0.8 1.2 1.6 2 0 20 40 60 80 100 v - drain-source voltage (v) i - drain current (ma) ds d t = 25 ? ? ? ? typ v = - 5.0 v gs(off) a - 4.0 v - 5.0 v - 3.0 v - 2.0 v - 1.0 v v = 0 v gs c parameter interactions 0.1 0.5 1 5 10 5 10 50 100 10 50 100 500 1,000 v - gate cutoff voltage (v) r - drain "on" resistance gs (off) ds i @ v = 5.0v, v = 0 pulsed r @ v = 100mv, v = 0 v @ v = 5.0v, i = 3.0 na gs(off) dss r ds i dss ( ? ? ? ? ) ds ds d gs gs dss i - drain current (ma) ds ds _ __ _ _ common drain-source -20 -16 -12 -8 -4 0 10 100 v - gate-source voltage (v) c (c ) - capacitance (pf) gs ts c (v = 5.0v) iss f = 0.1 - 1.0 mhz ds c (v = 0 ) rss ds rs common drain-source 012345 0 10 20 30 40 50 v - drain-source voltage (v) i - drain current (ma) ds d - 0.4 v - 0.5 v - 0.3 v - 0.2 v - 0.1 v v = 0 v gs t = 25 ? ? ? ? typ v = - 0.7 v gs(off) a c normalized drain resistance vs bias voltage 0 0.2 0.4 0.6 0.8 1 1 2 5 10 20 50 100 v /v - normalized gate-source voltage (v) r - normalized resistance gs ds r = ds v @ 5.0v, 10 a gs(off) r ds ________ v gs(off) v gs 1 - gs(off) noise voltage vs frequency 0.01 0.03 0.1 0.5 1 2 10 100 1 5 10 50 100 f - frequency (khz) e - noise voltage (nv / hz) n v = 10v bw = 6.0 hz @ f = 10 hz, 100 hz = 0.21 @ f 1.0 khz dg i = 10 ma d i = 1.0 ma d
?2002 fairchild semiconductor corporation rev. b1, november 2002 j108/j109/j110/mmbfj108 typical characteristics (continued) figure 7. switching turn-on time vs gate-source cutoff voltage figure 8. switching turn-on time vs drain current figure 9. on resistance vs drain current figure 10. output conductance vs drain current figure 11. transconductance vs drain current figure 12. power dissipation vs ambient temperature on gs(off) switching turn-on time vs gate-source cutoff voltage -10 -8 -6 -4 -2 0 0 2 4 6 8 10 v - gate-source cutoff voltage (v) t - turn-on time (ns) t = 25 ? ? ? ? v = 1.5v v = - 12v gs(off) a dd i = 30 ma d i = 10 ma d c gs(off) on switching turn-on time vs drain current 0 5 10 15 20 25 0 10 20 30 40 50 i - drain current (ma) t - turn-off time (ns) d off v = - 8.5v v = - 5.5v v = - 3.5v gs(off) gs(off) gs(off) t = 25 ? ? ? ? v = 1.5v v = - 12v gs(off) a dd c on resistance vs drain current 1 10 100 1 5 10 50 100 i - drain current (ma) r - drain "on" resistance d ds v = - 3.0v gs(off) 25 ? ? ? ? ( ? ? ? ? ) 125 ? ? ? ? 25 ? ? ? ? 125 ? ? ? ? v = - 5.0v gs(off) v = 0 gs - 55 ? ? ? ? c c c c c output conductance vs drain current 0.1 1 10 1 10 100 i - drain current (ma) g - output conductance ( mhos) d os v gs(off) t = 25 ? ? ? ? f = 1.0 khz v = 5.0v dg a 10v 15v 20v 5.0v 5.0v 10v 15v 20v - 4.0v 10v 15v 20v - 2.0v - 1.0v c transconductance vs drain current 0.1 1 10 1 10 100 i - drain current (ma) g - transconductance (mmhos) d fs v = - 1.0v v = - 3.0v v = - 5.0v gs(off) gs(off) gs(off) t = 25 ? ? ? ? v = 10v f = 1.0 khz a dg t = - 55 ? ? ? ? t = 25 ? ? ? ? t = 125 ? ? ? ? a a a c c c c 0 255075100125150 0 100 200 300 400 500 600 700 supersot-3 to-92 p d - power dissipation(mw) temperature ( o c)
package dimensions j108/j109/j110/mmbfj108 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. b1, november 2002 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92
?2002 fairchild semiconductor corporation rev. b1, november 2002 j108/j109/j110/mmbfj108 package dimensions (continued) dimensions in millimeters supersot-3
?2002 fairchild semiconductor corporation rev. i1 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? across the board. around the world.? the power franchise? programmable active droop?
|
