for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - sm t 15 15 - 1 HMC922LP4E gaas mmic non-reflective differential spdt switch, dc - 4 ghz v04.0607 general description features functional diagram differential spd t functionality low i nsertion loss: 0.8 db h igh i p3: +50 dbm h igh i nput p1db: +35 dbm positive c ontrol: 0/+3v to 0/+5v 24 lead 4x4 mm qfn package: 16 mm2 electrical specifcations, t a = +25 c, vctl = 0/+3 vdc (unless otherwise stated) , 50 ohm system typical applications t he h m c 922lp4 e is ideal for: ? t est & measurement e quipment ? antenna diversity & selector selection ? broadband switch matrices ? military, ew & ec m ? sa tc om & space t he h m c 922lp4 e is a d c to 4 g h z high isolation gaas mm ic non-refective differential spd t switch in a low cost leadless surface mount package. t he switch is ideal for antenna diversity & selector selec - tion, broadband switch matrices, test & measurement equipment, military and space applications yielding up to 60 db isolation, low 0.8 db insertion loss and +50 dbm input i p3. power handling is excellent with the switch offering a p1db compression point of +35 dbm. on-chip circuitry allows two positive voltage controls of 0/+3v to 0/+5v at very low d c currents. parameter frequency min. t yp. max. units i nsertion loss d c - 2.0 g h z 2.0 - 4.0 g h z 0.8 1.2 1.2 1.5 db db i solation: state 1: rf c n-rf2p, rf c n-rf2n, rf c p-rf2n, rf c p-rf2p state 2: rf c n-rf1p, rf c n-rf1n, rf c p-rf1n, rf c p-rf1p d c - 2.0 g h z 2.0 - 4.0 g h z 45 40 60 45 db db i solation state 1: rf c n-rf1p, rf c p-rf1n state 2: rf c n-rf2p, rf c p-rf2n d c - 2.0 g h z 2.0 - 4.0 g h z 30 20 40 30 db db return loss (on state, any port) d c - 2.0 g h z 2.0 - 4.0 g h z 20 15 db db i nput power for 1 db c ompression vctl= 0/+3v vctl= 0/+5v 0.5 - 4.0 g h z 30 35 dbm dbm i nput power for 0.1 db c ompression vctl= 0/+3v vctl= 0/+5v 0.5 - 4.0 g h z 27 32 dbm dbm i nput t hird order i ntercept ( t wo- t one i nput power= +7 dbm e ach t one) vctl= 0/+3v vctl= 0/+5v 0.5 - 4.0 g h z 50 50 dbm dbm switching c haracteristics tr i s e / tfall (10/90% rf) ton / toff (50% ct l to 10/90% rf) d c - 4.0 g h z 15 40 ns ns
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - sm t 15 15 - 2 return loss rfc insertion loss isolation state 1 return loss rf1, 2 isolation state 2 insertion loss vs. temperature HMC922LP4E v00.0610 gaas mmic non-reflective differential spdt switch, dc - 4 ghz -4 -3 -2 -1 0 0 1 2 3 4 5 6 rfcn - rf1n rfcp - rf1p rfcp - rf2p rfcn - rf2n insertion loss (db) frequency (ghz) -4 -3 -2 -1 0 0 1 2 3 4 5 6 +25c +85c -40c insertion loss (db) frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 10 0 1 2 3 4 5 6 rfcn - rf2p rfcn - rf2n rfcp - rf2n rfcp - rf2p rfcn - rf1p rfcp - rf1n isolation (db) frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 10 0 1 2 3 4 5 6 rfcn - rf1p rfcn - rf1n rfcp - rf1n rfcp - rf1p rfcn - rf2p rfcp - rf2n isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 rfcn state 1 rfcp state 1 rfcp state 2 rfcn state 2 return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 1 2 3 4 5 6 rf1n state 1 rf1p state 1 rf2p state 2 rf2n state 2 return loss (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - sm t 15 15 - 3 off state return loss input ip3* @ 3v input ip3 * @ 5v input 0.1db & 1 db compression point @ 3v input 0.1 db & 1 db compression point @ 5v input 0.1db compression point vs. temperature @ 3v * two-tone input power = +7 dbm each tone, 1 mhz spacing. HMC922LP4E v00.0610 gaas mmic non-reflective differential spdt switch, dc - 4 ghz -40 -30 -20 -10 0 0 1 2 3 4 5 6 rf2n state 1 rf2p state 1 rf1p state 2 rf1n state 2 return loss (db) frequency (ghz) 20 30 40 50 60 70 0 1 2 3 4 5 +25c +85c -40c ip3 (dbm) frequency (ghz) 20 30 40 50 60 70 0 1 2 3 4 5 +25c +85c -40c ip3 (dbm) frequency (ghz) 20 25 30 35 0 1 2 3 4 p0.1db p1db p0.1db & p1db (dbm) frequency (ghz) 25 30 35 40 0 1 2 3 4 p0.1db p1db p0.1db & p1db (dbm) frequency (ghz) 20 25 30 35 0 1 2 3 4 +25c +85c -40c p0.1db (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - sm t 15 15 - 4 control voltages insertion loss amplitude mismatch state bias c ondition low 0 to +0.5 vdc @ < 1 a t yp. h igh +3.0 to +5.5 vdc @ 20 a t yp. input 0.1 db compression point vs. temperature @ 5v insertion loss phase mismatch group delay mismatch absolute maximum ratings e l ect ros t a tic s e ns iti v e de v ice obs e rv e h andl i ng pr ec au ti ons HMC922LP4E v00.0610 gaas mmic non-reflective differential spdt switch, dc - 4 ghz 25 30 35 40 0 1 2 3 4 +25c +85c -40c p0.1db (dbm) frequency (ghz) -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 il(rfcp-rf1p) - il(rfcn-rf1n) il(rfcp-rf2p) - il(rfcn-rf2n) amplitude difference (db) frequency (ghz) -5 -4 -3 -2 -1 0 1 2 3 4 5 0 1 2 3 4 5 6 il(rfcp-rf1p) - il(rfcn-rf1n) il(rfcp-rf2p) - il(rfcn-rf2n) phase difference (degrees) frequency (ghz) -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 il(rfcp-rf1p) - il(rfcn-rf1n) il(rfcp-rf2p) - il(rfcn-rf2n) group delay difference (ns) frequency (ghz) c ontrol voltage (a, b) -0.5v to 8v d c rf i nput power t hrough path 3v/5v t ermination path 3v/5v 32 / 34 dbm 26 dbm c hannel t emperature 150 c t hermal resistance (channel to package ground paddle) t hrough path t ermination path 30 c / w 79 c / w storage t emperature -65 to +150 c operating t emperature -40 to +85 c e sd sensitivity ( h bm) c lass 1a truth table c ontrol i nput signal path state a b rf c p to: rf c n to: state 1 low h igh rf1p rf1n state 2 h igh low rf2p rf2n do not operate continuously at rf power input greater than 1 db compression and do not hot switch power levels grater than +27 dbm for control = 0/+3 vdc, or +30 dbm for control = 0/+5 vdc.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - sm t 15 15 - 5 pin descriptions HMC922LP4E v00.0610 gaas mmic non-reflective differential spdt switch, dc - 4 ghz outline drawing no tes: 1. pa c kag e body ma te r i al: alum i na 2. l e ad and ground paddl e pla ti ng: 30-80 m ic ro i n che s gold ov e r 50 m ic ro i n che s m i n i mum n ic k e l. 3. d i m e ns i ons ar e i n i n che s [m i ll i m ete rs]. 4. l e ad spa ci ng t ol e ran ce i s non- c umula ti v e 5. pa c kag e w arp s h all no t e x cee d 0.05mm da t um - c - 6. all ground l e ads and ground paddl e mus t b e sold e r e d to p c b rf ground. 7. c lass i f ie d as mo i s t ur e s e ns iti v it y l e v e l (msl) 1. part number package body material lead finish msl rating package marking [1] h m c 922lp4 e ro h s-compliant low stress i njection molded plastic 100% matte sn msl1 [2] h 922 xxxx [1] 4-digit lot number xxxx [2] max peak refow temperature of 260 c package information pin number function description i nterface schematic 3, 4, 9, 10, 21, 22 rf c p, rf c n, rf1n, rf1p, rf2n, rf2p t hese pins are d c coupled and matched to 50 ohms. blocking capacitors are required. 1, 6, 7, 12, 13, 18, 19, 24 n/ c t he pins are not connected internally; however, all data shown herein was measured with these pins connected to rf/d c ground externally. 2, 5, 8, 11, 14, 17, 20, 23 gnd package bottom has exposed metal paddle that must be connected to p c b rf ground as well. 16 a see truth and control voltage tables. 15 b see truth and control voltage tables.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - sm t 15 15 - 6 evaluation pcb t he circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. a sufficient number of via holes should be used to connect the top and bottom ground planes. t he evaluation circuit board shown above is available from h ittite upon request. list of materials for evaluation pcb 129570 [1] i tem description j1 - j6 p c b mount sma rf c onnector j7 - j9 d c pin c 1 - c 6 330 pf c apacitor, 0402 pkg. u1 h m c 922lp4 e spd t switch p c b [2] 129568 e valuation p c b [1] reference this number when ordering complete evaluation p c b [2] c ircuit board material: rogers 4350 HMC922LP4E v00.0610 gaas mmic non-reflective differential spdt switch, dc - 4 ghz
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