? semiconductor components industries, llc, 2005 january, 2005 ? rev. 7 1 publication order number: MMQA5V6T1/d MMQA5V6T1 series 24 watt peak power zener transient voltage suppressors sc?74 quad common anode for zeners esd protection these quad monolithic silicon voltage suppressors are designed for applications requiring transient voltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. their quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. features ? sc?74 package allows four separate unidirectional configurations ? working peak reverse voltage range ? 3.0 v to 2.5 v ? standard zener breakdown voltage range ? 5.6 v to 33 v ? peak power ? minimum 24 w @ 1 ms (unidirectional), per figure 5 ? peak power ? minimum 150 w @ 20 s (unidirectional), per figure 6 ? esd rating of class 3 (> 16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? package designed for optimal automated board assembly ? small package size for high density applications ? low leakage < 2.0 a ? pb?free packages are available mechanical characteristics case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds device * package shipping 2 ordering information mmqaxxxt1 sc?74 3000/tape & reel *the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. mmqaxxxt3 sc?74 10,000/tape & reel pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode 1 2 3 6 5 4 dev = device code = (see table next page) m = date code marking diagram pin assignment sc?74 case 318f style 1 dev m 1 6 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. individual devices are listed on page 3 of this data sheet. http://onsemi.com
uni?directional tvs i pp i f v i i r i t v rwm v c v br v f MMQA5V6T1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f (note 5) = 10 ma) unidirectional (circuit tied to pins 1, 2 and 5; pins 2, 3 and 5; or 2, 4 and 6; or pins 2, 5 and 6) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm z zt maximum zener impedance @ i zt v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f maximum ratings rating symbol value unit peak power dissipation (note 1) @ 1.0 ms @ t l 25 c p pk 24 w peak power dissipation (note 2) @ 20 s @ t l 25 c p pk 150 w total power dissipation (note 3) @ t a = 25 c derate above 25 c thermal resistance ? junction to ambient p d r ja 225 1.8 556 mw mw/ c c/w total power dissipation (note 4) @ t a = 25 c derate above 25 c thermal resistance ? junction to ambient p d r ja 300 2.4 417 mw mw/ c c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. nonrepetitive current pulse per figure 5 and derated above t a = 25 c per figure 4 2. nonrepetitive current pulse per figure 6 and derated above t a = 25 c per figure 4 3. fr?5 board = 1.0 x 0.75 x 0.62 in. 4. alumina substrate = 0.4 x 0.3 x 0.024 in., 99.5% alumina
MMQA5V6T1 series http://onsemi.com 3 electrical characteristics i r @ breakdown voltage z zt (note 6) v c @ i pp (note 7) device v rwm i r @ v rwm v br (note 5) (volts) @ i t z zt (n o t e 6) @ i zt v c i pp v br device d ev i ce marking volts na min nom max ma ma volts amps mw/ c MMQA5V6T1, g* 5a6 3.0 2000 5.32 5.6 5.88 1.0 400 1.0 8.0 3.0 1.26 mmqa6v2t1/t3, g* 6a2 4.0 700 5.89 6.2 6.51 1.0 300 1.0 9.0 2.66 10.6 mmqa6v8t1, g* 6a8 4.3 500 6.46 6.8 7.14 1.0 300 1.0 9.8 2.45 10.9 mmqa12vt1, g* 12a 9.1 75 11.4 12 12.6 1.0 80 1.0 17.3 1.39 14 mmqa13vt1/t3 13a 9.8 75 12.35 13 13.65 1.0 80 1.0 18.6 1.29 15 mmqa15vt1 15a 11 75 14.25 15 15.75 1.0 80 1.0 21.7 1.1 16 mmqa18vt1, g* 18a 14 75 17.1 18 18.9 1.0 80 1.0 26 0.923 19 mmqa20vt1/t32, g* 20a 15 75 19.0 20 21.0 1.0 80 1.0 28.6 0.84 20.1 mmqa21vt1 21a 16 75 19.95 21 22.05 1.0 80 1.0 30.3 0.792 21 mmqa22vt1 22a 17 75 20.9 22 23.1 1.0 80 1.0 31.7 0.758 22 mmqa24vt1 24a 18 75 22.8 24 25.2 1.0 100 1.0 34.6 0.694 25 mmqa27vt1 27a 21 75 25.65 27 28.35 1.0 125 1.0 39.0 0.615 28 mmqa30vt1 30a 23 75 28.5 30 31.5 1.0 150 1.0 43.3 0.554 32 mmqa33vt1 33a 25 75 31.35 33 34.65 1.0 200 1.0 48.6 0.504 37 5. v br measured at pulse test current i t at an ambient temperature of 25 c 6. z zt is measured by dividing the ac voltage drop across the device by the ac current supplied. the specified limits are i z (ac) = 0.1 i z (dc) with the ac frequency = 1.0 khz 7. surge current waveform per figure 5 and derate per figure 4 * the ago suffix indicates pb?free package available. 2not available in the 10,000/tape & reel. typical characteristics 300 v z , nominal zener voltage (v) c, capacitance (pf) 250 200 150 100 50 0 5.6 6.8 12 20 27 biased at 0 v biased at 1 v biased at 50% of v z nom figure 1. typical capacitance 5.6 6.8 20 27 10,000 1,000 100 10 0 figure 2. typical leakage current i r , leakage (na) v z , nominal zener voltage (v) 33 33 +150 c +25 c -40 c
MMQA5V6T1 series http://onsemi.com 4 typical characteristics figure 3. steady state power derating curve figure 4. pulse derating curve 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 p d , power dissipation (mw) t a , ambient temperature ( c) fr-5 board alumina substrate 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) peak pulse derating in % of peak power or current @ t a = 25 c figure 5. 10 1000 s pulse waveform value (%) 100 50 0 01234 t, time (ms) t r t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . t r 10 s half value i rsm 2 peak valuei rsm figure 6. 8 20 s pulse waveform figure 7. maximum non?repetitive surge power, ppk versus pw figure 8. typical maximum non?repetitive surge power, ppk versus v br ppk peak surge power (w) 0.1 1.0 10 100 1000 1.0 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, ta = 25 c 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current 200 180 160 140 120 100 80 60 40 20 0 5.6 6.8 12 20 33 nominal v z p t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s 27 , peak surge power (w) pk 8 20 waveform as per figure 6 10 100 waveform as per figure 5
MMQA5V6T1 series http://onsemi.com 5 typical common anode applications a quad junction common anode design in a sc-74 package protects four separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. a simplified example of mmqa series device applications is illustrated below. keyboard terminal printer etc. functional decoder i/o a mmqa series device gnd b c d figure 9. computer interface protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd mmqa series device figure 10. microprocessor protection
MMQA5V6T1 series http://onsemi.com 6 package dimensions sc?74 case 318f?05 issue k style 1: pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max millimeters inches a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0649 1.25 1.65 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f?01, ?02, ?03 obsolete. new standard 318f?04. m j k 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMQA5V6T1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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