1/9 december 2002 STGB20NB37LZ n-channel clamped 20a - d2pak internally clamped powermesh? igbt n polysilicon gate voltage driven n low threshold voltage n low on-voltage drop n low gate charge n high current capability n high voltage clamping feature n surface-mounting d2pak (to-263) power package in tube (no suffix) or in tape & reel (suffix t4) description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an esd protection. applications n automotive ignition absolute maximum ratings (?)pulse width limited by safe operating area type v ces v ce(sat) i c stgb20nb37z clamped < 2.0 v20a symbol parameter value unit v ces collector-emitter voltage (v gs =0) clamped v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage clamped v i c collector current (continuos) at t c = 25c 40 a i c collector current (continuos) at t c = 100c 30 a i cm ( ) collector current (pulsed) 80 a eas single pulse energy tc = 25c 700 mj p tot total dissipation at t c = 25c 150 w derating factor 1 w/c e sd esd (human body model) 4 kv t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c 1 3 d2pak internal schematic diagram
STGB20NB37LZ 2/9 thermal data electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w rthc-sink thermal resistance case-sink typ 0.2 c/w symbol parameter test conditions min. typ. max. unit bv (ces) clamped voltage i c =2ma,v ge = 0, tc= - 40c 380 405 430 v i c =2ma,v ge = 0, tc= 25c 375 400 425 v i c =2ma,v ge = 0, tc= 150c 370 395 420 bv (ecr) emitter collector break-down voltage i c =75ma,tc=25c 20 28 v bv ge gate emitter break-down voltage i g =2ma 12 14 16 v i ces collector cut-off current (v ge =0) v ce =15v,v ge =0 ,t c =150 c 10 a v ce =200 v, v ge =0 ,t c =150c 100 a i ges gate-emitter leakage current (v ce =0) v ge =10v,v ce =0 300 660 1000 a r ge gate emitter resistance 10 15 30 k w symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a, tc=-40c 1.2 1.4 2 v v ce =v ge ,i c = 250a, tc= 25c 1v v ce =v ge ,i c = 250a, tc=150c 0.6 v v ce(sat) collector-emitter saturation voltage v ce =4.5v, i c = 10 a, tc= 25c 1.1 1.8 v v ce =4.5v, i c = 10 a, tc= 150c 1.0 1.7 v v ce =4.5v, i c = 20 a, tc= 25c 1.35 2.0 v v ce =4.5v, i c = 20 a, tc= 150c 1.25 2.0 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =20 a 35 s c ies input capacitance v ce = 25v, f = 1 mhz, v ge =0 2300 pf c oes output capacitance 165 pf c res reverse transfer capacitance 28 pf q g gate charge v ce = 280v, i c =20a, v ge =5v 51 nc
3/9 STGB20NB37LZ functional characteristics switching on switching off ( l )pulsed: pulse duration = 300 s, duty cycle 1.5 %. (1)pulse width limited by max. junction temperature. (**)losses include also the tail symbol parameter test conditions min. typ. max. unit ii latching current v clamp =250v,t c = 150 c r goff =1k w ,v ge = 4.5 v 80 a u.i.s. functional test open secondary coil r goff =1k w ,l=3mh,tc=25c 21.6 26 a r goff =1k w , l = 3mh ,tc=150c 15 18 a symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v cc =250v,i c =20a r g =1k w ,v ge = 4.5 v 2.3 s t r rise time 0.6 s (di/dt) on turn-on current slope v cc = 250 v, i c =20a r g =1k w ,v ge = 4.5 v 550 a/s eon turn-on switching losses v cc = 250 v, i c =20a,tc=25c 8.8 mj r g =1k w ,v ge = 4.5 v, tc=150c 9.2 mj symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 250 v, i c =20a, r ge =1k w ,v ge = 4.5 v 4.8 s t r (v off ) off voltage rise time 2.6 s t d ( off ) delay time 2.0 s t f fall time 11.5 s e off (**) turn-off switching loss 11.8 mj t c cross-over time v cc = 250 v, i c =20a, r ge =10 w ,v ge =15v tj = 125 c 7.8 s t r (v off ) off voltage rise time 3.5 s t d ( off ) delay time 3.9 s t f fall time 12.0 s e off (**) turn-off switching loss 17.8 mj thermal impedance
STGB20NB37LZ 4/9 collector-emitter on voltage vs temperature output characteristics transconductance transfer characteristics normalized gate threshold voltage vs temp.
5/9 STGB20NB37LZ break-down voltage vs emitter resistance in- ductive switch configuration b vgeo (zener gate-emitter) vs temperature break-down voltage vs temperature gate charge vs gate-emitter voltage capacitance variations
STGB20NB37LZ 6/9 b vec reverse battery voltage dv/dt gate-emitter resistance self clamped inductive switching energy vs open secondary coil
7/9 STGB20NB37LZ 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
STGB20NB37LZ 8/9 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
9/9 STGB20NB37LZ information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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