2003. 12. 9 1/2 semiconductor technical data MPSA94A epitaxial planar pnp transistor revision no : 0 high voltage application. features high breakdown voltage. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ) *pulse test : pulse width 300 s, duty cycle 2% characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -480 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -480 - - v collector-emitter breakdown voltage v (br)ces i c =-100 a, i b =0 -480 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -6.0 - - v collector cut off current i cbo v cb =-400v, i e =0 - - -100 na collector cut off current i ces v ce =-480v, i b =0 - - -1 a emitter cutoff current i ebo v eb =-4v, i c =0 - - -100 na dc current gain * h fe v ce =-10v, i c =-1ma 40 - - v ce =-10v, i c =-10ma 50 - 300 v ce =-10v, i c =-50ma 45 - - v ce =-10v, i c =-100ma 40 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-1ma, i b =-0.1ma - - -0.35 v v ce(sat) 2 i c =-20ma, i b =-2ma - - -0.5 v ce(sat) 3 i c =-50ma, i b =-5ma - - -0.75 base-emitter saturation voltage * v be(sat) i c =-10ma, i b =-1ma - - -0.75 v characteristic symbol rating unit collector-base voltage v cbo -480 v collector-emitter voltage v ceo -480 v emitter-base voltage v ebo -6 v collector current i c -300 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150
2003. 12. 9 2/2 MPSA94A revision no : 0 h - i fe c c collector current i (ma) -1 -3 -10 -30 1k fe dc current gain h 100 -100 -300 -1k 300 10 3 1 v =-10v ce 100 10 collector output capacitance 0.3 collector base voltage v (v) 3 1 0.1 10 13 cb 30 ob(pf) 100 30 c - v ob cb f=1mhz c collector current i (ma) saturation voltage v (mv) 300 100 13 10k 3k 1k i =10i 300 30 10 100 c v - i c 1k c be(sat) be(sat) b 30 saturation voltage v (mv) i =10i collector current i (ma) 300 10 10 30 13 ce(sat) 100 300 1k 3k 10k 30k 100k 30 c 100 v - i ce(sat) c c 1k b i =0 e
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