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| savantic semiconductor product specification silicon pnp darlington power transistors 2SB1647 d escription with to-3pn package complement to type 2sd2560 applications audio ,regulator and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -1 a p c collector power dissipation t c =25 130 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp darlington power transistors 2SB1647 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -150 v v cesat collector-emitter saturation voltage i c =-10a ;i b =-10ma -2.5 v v besat base-emitter saturation voltage i c =-10a ;i b =-10ma -3.0 v i cbo collector cut-off current v cb =-150v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe dc current gain i c =-10a ; v ce =-4v 5000 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 320 pf f t transition frequency i c =-2a ; v ce =-12v 45 mhz switching times t on turn-on time 0.7 s t s storage time 1.6 s t f fall time i c =-10a;r l =4 a i b1 =- i b2 =-10ma v cc =-40v 1.1 s h fe classifications o p y 5000-12000 6500-20000 15000-30000 savantic semiconductor product specification 3 silicon pnp darlington power transistors 2SB1647 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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