shantou huashan electronic devices co.,ltd . applications low frequency power amplifier medium seed switching . absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 120 v i c =10 a, i e =0 bv ceo collector-emitter breakdown voltage 120 v i c =1ma, i b =0 bv ebo emitter-base breakdown voltage 5 v i e =10 a i c =0 i cbo collector cut-off current 1 a v cb =50v, i e =0 i ebo emitter cut-off current 1 a v eb =4v, i c =0 h fe 1 dc current gain 60 320 v ce =5v, i c =50ma h fe 2 dc current gain 20 v ce =5v, i c =500ma v ce(sat) collector- emitter saturation voltage 0.15 0.4 v i c =500ma, i b =50ma v be(sat) base-emitter saturation voltage 0.85 1.2 v i c =500ma, i b =50ma t off turn-off time 500 ns t stg storage time 700 ns see specified test circuit t f fall time 100 ns f t current gain-bandwidth product 130 mhz v ce =10v, i c =50ma, cob output capacitance 20 pf v cb =10v, i e =0 f=1 mhz h fe classification d e f 60 120 100 200 160 320 npn s i l i c o n t r a n s i s t o r t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 1w v cbo collector-base voltage 120v v ceo collector-emitter voltage 120v v ebo emitter-base voltage 5v i c collector current 1a HS600K to-126 1 D emitter e 2 D collector c 3 D base b
shantou huashan electronic devices co.,ltd . npn s i l i c o n t r a n s i s t o r HS600K
shantou huashan electronic devices co.,ltd . npn s i l i c o n t r a n s i s t o r HS600K
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