sot23 pnp silicon planar high speed transistor issue 2 - september 1995 j partmarking detail ? bss65 - l1 bss65r - l5 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -12 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -4 v peak pulse current i cm -200 ma continuous collector current i c -100 ma base current i c -50 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. breakdownvoltages v (br)ceo -12 v i c =-10ma v (br)cbo -12 v i c =-10 m a * v (br)ebo -4 v i e =-10 m a cut-off currents i cbo -100 na v cb =-6v, i e =0 i ebo -100 na v eb =-4v, i c =0 collector-emitter saturation voltage v ce(sat) -0.15 -0.25 v v i c =-10ma, i b =-1ma i c =-30ma, i b =-3ma base-emitter saturation voltage v be(sat) -0.75 -0.82 -0.98 -1.20 v v i c =-10ma, i b =-1ma i c =-30ma, i b =-3ma static forward current transfer ratio h fe 30 40 150 i c =-10ma, v ce =-0.3v i c =-30ma, v ce =-0.5v transition frequency f t 400 mhz i c =-30ma, v ce =-10v, f=100mhz collector-base capacitance c obo 6pfv cb =-5v, i e =0, f=1mhz emitter base capacitance c ebo 6pfv eb =-0.5v, i c =0, f=1mhz switching times turn-on time turn-off time t on t off 23 34 60 90 ns ns i c =-30ma i b1 = -i b2 = -1.5ma v cc =-10v bss65 c b e page number
|
