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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC5480 description high breakdown voltage- : v cbo = 1500v (min) high switching speed built-in damper diode applications designed for horizontal def lection output stage applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c( peak ) collector current-peak 14 a i c( surge ) collector current-surge 28 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5480 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 500ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 2.5a 5.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2.5a 1.5 v i ces collector cutoff current v ce = 1500v; r be = 0 500 a h fe-1 dc current gain i c = 1a; v ce = 5v 5 25 h fe-2 dc current gain i c = 10a; v ce = 5v 4 7 t f fall time i cp = 7a, i b1 = 2.4a; f h = 31.5khz 0.4 s isc website www.iscsemi.cn 2 |
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