ver.00/21.08.2009 ifp840-tse.doc { { { ? { { { ? absolute maximum ratings symbol parameter value units v dss drain to source voltage 500 v i d continuous drain current(@t c = 25 c) 8.0 a continuous drain current(@t c = 100 c) 5.1 a i dm drain current pulsed (note 1) 32 a v gs gate to source voltage 25 v e as single pulsed avalanche energy (note 2) 320 mj e ar repetitive avalanche energy (note 1) 13.4 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d total power dissipation(@t c = 25 c) 134 w derating factor above 25 c 1.08 w/c t stg, t j operating junction temperature & storage temperature - 55 ~ 150 c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 c thermal characteristics symbol parameter value units min. typ. max. r jc thermal resistance, junction-to-case - - 0.93 c/w r cs thermal resistance, case to sink - 0.5 - c/w r ja thermal resistance, junction-to-ambient - - 62.5 c/w features r ds(on) (max 0.85 ? )@v gs =10v gate charge (typical 38nc) improved dv/dt capability, high ruggedness 100% avalanche tested maximum junction temperature range (150c) general description this power mosfet is produced using integral?s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. these devices are well suited for high efficiency switching dc/ dc converters, switch mode power supply, dc-ac converters for uninterruped power supply, motor control. n-channel mosfet symbol 2. drain 3. source 1. gate to-220 1 2 3 et- 840 beijing estek electronics co.,ltd page 1 of 2
(note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width li mited by maximum junction temperature 2. l = 9.0mh, i as = 8.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 8.0a, di/dt 300 a/s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.50 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 1 a v ds = 400 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 25 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -25 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.0 a -- 0.70 0.85 ? g fs forward transconductance v ds = 40 v, i d = 4.0 a -- 7.0 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1570 2040 pf c oss output capacitance -- 150 195 pf c rss reverse transfer capacitance -- 15 20 pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 8.0 a, r g = 25 ? -- 25 60 ns t r turn-on rise time -- 75 160 ns t d(off) turn-off delay time -- 125 260 ns t f turn-off fall time -- 75 160 ns q g total gate charge v ds = 400 v, i d = 8.0a, v gs = 10 v -- 38 50 nc q gs gate-source charge -- 8 -- nc q gd gate-drain charge -- 13 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 8.0 a i sm maximum pulsed drain-source diode forward current -- -- 32 a v sd drain-source diode forward voltage v gs = 0 v, i s = 8.0 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 8.0 a, di f / dt = 100 a/ s -- 270 -- ns q rr reverse recovery charge -- 1.89 -- c ver.00/21.08.2009 ifp840-tse.doc beijing estek electronics co.,ltd page 2 of 2 et- 840
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