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| symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 31 40 59 75 r q jl 16 24 a repetitiveavalancheenergy0.3mh b 135 mj maximumjunctiontolead c steadystate c/w thermal characteristics parameter units maximumjunctiontoambient a t10s r q ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulseddraincurrent b powerdissipation t a =25c gatesourcevoltage drainsourcevoltage maximumjunctiontoambient a steadystate 18 15 80 avalanchecurrent b 30 continuousdrain current af maximum units parameter t a =25c t a =70c 30 w junctionandstoragetemperaturerange a p d c 3 2.1 55to150 t a =70c i d AO4430 features v ds (v)=30v i d =18a(v gs =10v) r ds(on) <5.5m w (v gs =10v) r ds(on) <7.5m w (v gs =4.5v) theAO4430/lusesadvancedtrenchtechnologytoprovide excellentr ds(on) ,shootthroughimmunity,bodydiode characteristicsandultralowgateresistance.thisdeviceis ideallysuitedforuseasalowsideswitchinnotebookcpu corepowerconversion. AO4430andAO4430lareelectricallyidentical. g d s www.freescale.net.cn 1/5 n-channel enhancement mode field general description effect transistor
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 2.5 v i d(on) 80 a 4.7 5.5 t j =125c 6.5 8 6.2 7.5 m w g fs 82 s v sd 0.7 1 v i s 4.5 a c iss 4660 6060 7270 pf c oss 425 638 960 pf c rss 240 355 530 pf r g 0.2 0.45 0.9 w q g (10v) 80 103 124 nc q g (4.5v) 37 48 58 nc q gs 18 nc q gd 15 nc t d(on) 12 16 ns t r 8 12 ns t d(off) 51.5 70 ns t f 8.8 14 ns t rr 33.5 44 ns q rr 22 30 nc body diode reverse recovery time body diode reverse recovery charge i f =18a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =15a i s =1a,v gs =0v v ds =5v, i d =18a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.83 w , r gen =3 w turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =18a a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r fq ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev5: nov 20 08 www.freescale.net.cn 2/5 AO4430 n-channel enhancement mode field effect transistor +('33)'3,*.) 3.))'' 5 * 5 & 6 1789)1 ' * & 5 / 5 & 6 1# 8: ' * & ' * & 6 1#89) ;4* #% /5 1 ) * ,& w w w w & /= /= /= /= /= /k /k /k 5 * 5 & 6 1#<8= %9* % ' & # "& 6 1#89) ;4 # # , >%9) 5 / 5 & 6 1#!89) ;4/9 #5 1 ) * ,& w w w w & www.freescale.net.cn 3/5 AO4430 n-channel enhancement mode field effect transistor +('33)'3,*.) 3.))'' ? 1 & 6 1#@8/9 1 5 / 5 & 5 * 5 & 6 1#a8 6& !"" (# - % & 6 1#78 1 (# ( $) 1 # 9 9 , & ( $ -& (# - % & 6 1#778, >% # '% b q q q q , >% ) $"" &"" 5 * 5 & ' * & 6 1#c8 #6 $%= %: 1 , & m " " " " " " ' a! !8) 1;c ! a8,->a"8 $ < 5-2 k- 1 4 q ' q ' q <6 $ - ,)8":8)! ,$&)8& 5,5,5, 5,5,5,"! a8,#>a"8 1;c m " www.freescale.net.cn 4/5 AO4430 n-channel enhancement mode field effect transistor - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 5/5 AO4430 n-channel enhancement mode field effect transistor |
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