? semiconductor components industries, llc, 2012 june, 2012 ? rev. p1 1 publication order number: ntns3164nz/d ntns3164nz advance information small signal mosfet 20 v, 245 ma, single n ? channel, sot ? 883 (xdfn3) 1.0 x 0.6 x 0.4 mm package features ? single n ? channel mosfet ? ultra low profile sot ? 883 (xdfn3) 1.0 x 0.6 x 0.4 mm for extremely thin environments such as portable electronics ? low r ds(on) solution in the ultra small 1.0 x 0.6 mm package ? 1.5 v gate drive ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? high side switch ? high speed interfacing ? optimized for power management in ultra portable solutions maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 8 v continuous drain current (note 1) steady state t a = 25 c i d 245 ma t a = 85 c 176 t 5 s t a = 25 c 287 power dissipation (note 1) steady state t a = 25 c p d 154 mw t 5 s 212 pulsed drain current t p = 10 s i dm 732 ma operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s 128 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using the minimum recommended pad size, or 2 mm 2 , 1 oz cu. 2. pulse test: pulse width 300 s, duty cycle 2% this document contains information on a new product. specifications and information herein are subject to change without notice. http://onsemi.com v (br)dss r ds(on) max i d max 20 v 1.5 @ 4.5 v 2.0 @ 2.5 v 245 ma device package shipping ? ordering information NTNS3164NZT5G sot ? 883 (pb ? free) 8000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. http://onsemi.com marking diagram sot ? 883 (xdfn3) case 506cb xx = specific device code m = date code xx m d (3) s (2) g (1) n ? channel mosfet 2 1 3 4.0 @ 1.8 v 6.8 @ 1.5 v
ntns3164nz http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 3) r ja 814 c/w junction ? to ? ambient ? t 5 s (note 3) r ja 589 3. surface ? mounted on fr4 board using the minimum recommended pad size, or 2 mm 2 , 1 oz cu. electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j i d = 250 a, ref to 25 c 20 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v t j = 25 c 1 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 5 v 10 a on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.4 1.0 v negative threshold temperature coefficient v gs(th) /t j 1.7 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 200 ma 0.5 1.5 v gs = 2.5 v, i d = 100 ma 0.7 2.0 v gs = 1.8 v, i d = 50 ma 1.0 4.0 v gs = 1.5 v, i d = 10 ma 1.3 6.8 source ? drain diode voltage v sd v gs = 0 v, i s = 100 ma 0.75 1.2 v charges & capacitances input capacitance c iss v gs = 0 v, freq = 1 mhz, v ds = 10 v 23 pf output capacitance c oss 5.0 reverse transfer capacitance c rss 3.3 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v; i d = 200 ma 0.8 nc threshold gate charge q g(th) 0.1 gate ? to ? source charge q gs 0.2 gate ? to ? drain charge q gd 0.1 switching characteristics, vgs = 4.5 v (note 4) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 200 ma, r g = 2 12 ns rise time t r 17 turn ? off delay time t d(off) 90 fall time t f 42 4. switching characteristics are independent of operating junction temperatures
ntns3164nz http://onsemi.com 3 typical characteristics figure 1. on resistance variation with temperature figure 2. threshold voltage r ds(on) , normalized drain ? to ? source resistance ( ) 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 ? 50 ? 25 0 25 50 75 100 125 150 t j , junction temperature ( c) v gs = 4.5 v i d = 200 ma t j , temperature junction ( c) v gs(th) , gate ? to ? source threshold voltage (v) 0.85 ? 50 ? 25 0 25 50 75 100 125 15 0 i d = 250 a 0.80 0.70 0.60 0.50 0.45 v gs = 1.8 v i d = 50 ma 1.7 1.8 0.6 0.75 0.65 0.55
ntns3164nz http://onsemi.com 4 package dimensions ? 883 (xdfn3), 1.0x0.6, 0.35p case 506cb issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. exposed copper allowed as shown. a b e d bottom view b 0.10 c top view 0.10 c a a1 0.10 c 0.10 c c seating plane side view dim min max millimeters a 0.340 0.440 a1 0.000 0.030 b 0.075 0.200 d2 0.620 bsc e 0.350 bsc l 0.170 0.300 solder footprint* dimensions: millimeters 1.10 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1 l 0.43 recommended d 0.950 1.075 e 0.550 0.675 e2 0.425 0.550 a m 0.10 b c m 0.05 c e e/2 2x 3x d2 e2 2x 0.41 0.55 0.20 2x package outline pin one reference note 3 3x 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntns3164nz/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
