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| inchange semiconductor product specification silicon pnp power transistors 2N6034 2n6035 2n6036 description ? with to-126 package ? complement to type 2n6037/6038/6039 ? darlington ? high dc current gain applications ? designed for general-purpose amplifier and low-speed switching applications pinning(see fig.2) pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2N6034 -40 2n6035 -60 v cbo collector-base voltage 2n6036 open emitter -80 v 2N6034 -40 2n6035 -60 v ceo collector-emitter voltage 2n6036 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -8 a i b base current -0.1 a p d total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 3.12 ??/w
inchange semiconductor product specification 2 silicon pnp power transistors 2N6034 2n6035 2n6036 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6034 -40 2n6035 -60 v ceo(sus) collector-emitter sustaining voltage 2n6036 i c =-0.1a ;i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-2a; i b =-8ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-4a; i b =-40ma -3.0 v v besat base-emitter saturation voltage i c =-4a; i b =-40ma -4.0 v v be base-emitter on voltage i c =-2a ; v ce =-3v -2.8 v i ceo collector cut-off current v ce =rated v ceo ; i b =0 -0.1 ma i cex collector cut-off current v ce =rated v ceo ; v be(off) =1.5v t c =125 ?? -0.1 -0.5 ma i cbo collector cut-off current v cb =rated v cbo ; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-0.5a ; v ce =-3v 500 h fe-2 dc current gain i c =-2a ; v ce =-3v 750 15000 h fe-3 dc current gain i c =-4a ; v ce =-3v 100 c ob output capacitance i e =0;v cb =-10v;f=0.1mhz 200 pf inchange semiconductor product specification 3 silicon pnp power transistors 2N6034 2n6035 2n6036 package outline fig.2 outline dimensions |
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