TC2491 rev4_20070507 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 1 / 3 0.5 w flange ceramic packaged phemt gaas power fets features ? 0.5 w typical output power at 6 ghz ? 15 db typical linear power gain at 6 ghz ? high linearity: ip3 = 37 dbm typical at 6 ghz ? high power added efficiency: nominal pae of 40 % at 6 ghz ? suitable for high reliability application ? breakdown voltage: bv dgo 15 v ? lg = 0.35 m, wg = 1.2 mm ? tight vp ranges control ? high rf input power handling capability ? 100 % dc tested ? flange ceramic package description the TC2491 is packaged with the tc1401 pseudomorphic high electron mobility transistor (phemt) chip. the flange ceramic package provides the best thermal conductivity for the gaas fet. all devices are 100% dc and rf tested to assure consistent quality. typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 6ghz v ds = 8 v, i ds = 120 ma 26.5 27 dbm g l linear power gain, f = 6ghz v ds = 8 v, i ds = 120 ma 15 db ip3 intercept point of the 3 rd -order intermodulation, f = 6ghz v ds = 8 v, i ds = 120 ma, *p scl = 14 dbm 37 dbm pae power added efficiency at 1db compression power, f = 6ghz 40 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 300 ma g m transconductance at v ds = 2 v, v gs = 0 v 200 ms v p pinch-off voltage at v ds = 2 v, i d = 2.4 ma -1.7** volts bv dgo drain-gate breakdown voltage at i dgo =0.6 ma 15 18 volts r th thermal resistance 25 c/w note: * p scl : output power of single carrier level ** for the tight control of the pinch-off voltage range, we divide TC2491 into 3 model numbers to fit customer design requireme nt (1)TC2491p1519 : vp = -1.5v to -1.9v (2)TC2491p1620 : vp = -1.6v to -2.0v (3)TC2491p1721 : vp = -1.7v to -2.1v if required, customer can specify the requirement in purchasing document. for special vp requirement, please contact factory fo r details. photo enlargement
TC2491 rev4_20070507 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 2 / 3 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i ds drain current i dss p in rf input power, cw 26 dbm p t continuous dissipation 1.9 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c recommanded operating condition symbol parameter rating v ds drain to source voltage 8 v i d drain current 120 ma handling precautions: the user must operate in a clean, dry environment. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v . typical scattering parameters (t a =25 c) v ds = 8 v, i ds = 120 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 9ghz swp min 2ghz s11 0 15 30 45 60 75 90 105 120 135 150 165 -180 -165 -150 -135 -120 -105 -90 -75 -60 -45 -30 -15 swp max 9 ghz swp min 2 ghz mag max 10 2 per div s21 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 swp max 9ghz swp min 2ghz s22 0 15 30 45 60 75 90 10 5 12 0 13 5 150 165 -180 -165 -150 -135 - 12 0 - 10 5 - 90 - 75 - 60 - 45 -30 -15 swp max 9 ghz swp min 2 ghz mag max 0.1 0.025 per div s12
TC2491 rev4_20070507 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 p 3 / 3 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.8455 -146.07 7.0138 72.47 0.0398 0.67 0.4193 -85.61 3 0.8075 174.44 5.4789 38.75 0.0426 -24.40 0.3998 -104.93 4 0.7944 135.48 4.6247 5.59 0.0415 -48.07 0.3699 -126.51 5 0.7954 86.86 4.2254 -31.28 0.0404 -76.10 0.3029 -144.68 6 0.8582 29.13 3.6581 -73.88 0.0345 -110.20 0.1848 -151.48 7 0.9370 -17.10 2.7289 -115.82 0.0215 -147.61 0.1316 -94.58 8 0.9470 -50.56 1.8813 -155.07 0.0112 170.65 0.3205 -72.70 9 0.9074 -87.80 1.1999 162.03 0.0076 44.87 0.5130 -84.93 outline dimensions (unit: mm) gate drain source source
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