fast switching speed for general purpose switching applications high conductance marking :t3 maximum ratings @t a =25 parameter symbol limits unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 v forward continuous current i fm 400 ma average rectified output current i o 200 ma non-repetitive peak forward surge current @ t = 1.0s @ t = 1.0s i fsm 2.5 0.5 a power dissipation p d 150 mw thermal resistance junction to ambient air r ja 833 /w operating junction temperature t j 150 storage temperature t stg -65-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 200 v reverse voltage leakage current i r v r =200v 100 na forward voltage v f i f =100ma i f =200ma 1 1.25 v total capacitance c t v r =0v,f=1mhz 5 pf reverse recovery time t r r i f =i r =30ma,i rr =0.1xi r , r l =100 ? 50 ns BAS21T switching diode features ? ? ? dimensions in inches and (millimeters) sot-523 http://www.luguang.cn mail:lge@luguang.cn
typical characteristics BAS21T switching diode http://www.luguang.cn mail:lge@luguang.cn
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