symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 19.6 25 50 60 r jc 0.9 1.5 t a =70c 1.3 w junction and storage temperature range p d c 100 50 -55 to 175 t c =100c 2.1 w continuous drain current b,g maximum units parameter t c =25c g t c =100c b 30 a i d maximum junction-to-ambient a steady-state 85 63 150 avalanche current c 30 power dissipation a t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w a repetitive avalanche energy l=0.1mh c 112 mj continuous drain current g t a =25c i dsm 18 t a =70c 14 aol1420 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 85a (v gs = 10v) r ds(on) < 3.7m ? (v gs = 10v) r ds(on) < 5.5m ? (v gs = 4.5v) general description the aol1420 uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. this device is ideally suited for use as a low side switch in cpu core power conversion. standard product aol1420 is pb-free (meets rohs & sony 259 specifications). AOL1420L is a green product ordering option. aol1420 and AOL1420L are electrically identical. g d s ultra so-8 tm top view bottom tab connected to drain fits soic8 footprint ! s g d alpha & omega semiconductor, ltd.
aol1420 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 85 a 2.9 3.7 t j =125c 4.4 5.5 4.4 5.5 m g fs 106 s v sd 0.72 1 v i s 85 a c iss 3200 3840 pf c oss 590 pf c rss 414 pf r g 0.54 0.7 q g (10v) 63 76 nc q g (4.5v) 33 40 nc q gs 8.6 nc q gd 17.6 nc t d(on) 12 ns t r 15.5 ns t d(off) 40 ns t f 14 ns t rr 34 41 ns q rr 30 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen =3 turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a total gate charge a: the value of r qja is measured with the device in a still air environment with t a =25c. b. the power dissipation pd is based on tj(max)=175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature tj(max)=175c. d. the r qja is the sum of the thermal impedence from junction to case r qjc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. f. these curves are based on the j unction-to-case thermal impedence which is measured with the device mounted to a lar g e heatsink, assumin g a maximum junction temperature of tj(max)=175c. g. the maximum current rating is limited by bond-wires. rev0: august 2005 alpha & omega semiconductor, ltd.
aol1420 typical electrical and thermal characteristic s 0 25 50 75 100 125 150 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 10v 4.0 v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 8 0 102030405060 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 0 2 4 6 8 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =5v v gs =4.5v v gs =10 v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd.
aol1420 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 10203040506070 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 100 jc .r jc r ja =1.5c/w t on t p d in descending order d=0.5 , 0.3 , 0.1 , 0.05 , 0.02 , 0.01 , sin g le p ulse t j(max) =175c t c =25c 10 alpha & omega semiconductor, ltd.
aol1420 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0.00001 0.0001 0.001 0.01 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t a =25c dd d a v bv i l t ? ? = 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w alpha & omega semiconductor, ltd.
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