1/9 december 2003 stb95nf03 n-channel 30v - 0.0065 w - 95a d2pak stripfet? ii power mosfet n typical r ds (on) = 0.0065 w n standard threshold drive n 100% avalanche tested n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix t4) description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high speed switching n dc-dc & dc-ac converters n solenoid and relay drivers type v dss r ds(on) i d stb95nf03 30 v <0.007 w 80 a 1 3 d 2 pak to-263 (suffix t4) absolute maximum ratings ( ) pulse width limited by safe operating area. (*) current limited by package (1) i sd 95a, di/dt 150a/s, v dd v (br)dss , t j t jmax. (2) starting t j = 25 o c, i d = 47.5a, v dd = 25v symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 20 v i d ( * ) drain current (continuous) at t c = 25c 80 a i d drain current (continuous) at t c = 100c 80 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 150 w derating factor 1 w/c dv/dt (1) peak diode recovery voltage slope 3.0 v/ns e as (2) single pulse avalanche energy 720 mj t stg storage temperature -55 to 175 c t j operating junction temperature internal schematic diagram
stb95nf03 2/9 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 1 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 45 a 0.0065 0.0070 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =45 a 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 2450 880 170 pf pf pf
3/9 stb95nf03 switching on (* ) switching off (* ) source drain diode (* ) (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by t jmax symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 15 v i d = 47.5 a r g = 4.7 w v gs = 10 v 20 195 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15v i d =95a v gs =10v 59 18 21 70 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 20 v i d = 47.5 a r g = 4.7 w, v gs = 10 v 35 35 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 95 320 a a v sd (*) forward on voltage i sd = 95 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 95 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 5) 60 120 4 ns nc a thermal impedance electrical characteristics (continued) safe operating area
stb95nf03 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 stb95nf03 . . normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
stb95nf03 6/9 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/9 stb95nf03 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
stb95nf03 8/9 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
9/9 stb95nf03 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. a 2003 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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