s m t p o w e r i n d u c t o r si65 t ype features 1. t olerance of inductance 10~220uh 10% 2. i : rated current. l<10%, t<45 at i o c 3. operating temperature: -20 to 105 (including self-temperature rise) oo cc rated rated mechanical dimension: 5.8 b c 6.1 1.1 d a low profile (4.85mm max. height) smd type. unshielded.self-leads, suitable for high density high energy storage and low dcr. provided with embossed carrier tape packing. ideal for power source circuits, dc-dc converter, dc-ac inverters inductor application. in addition to the standard versions shown here, customized inductors are available to meet your exact requirements. mounting. delt a electronics, inc. (taoyuan plant cpbg) electrical characteristics: 0 . 0 0 0 . 0 1 0 . 1 0 1 . 0 0 1 0 . 0 0 c u r r e n t ( a ) 1 . 0 0 1 0 . 0 0 1 0 0 . 0 0 1 0 0 0 . 0 0 i n d u c t a n c e ( u h ) 2 2 1 1 8 1 1 5 1 1 2 1 1 0 1 8 2 0 6 8 0 5 6 0 4 7 0 3 9 0 3 3 0 2 2 0 1 8 0 1 5 0 1 2 0 1 0 0 2 7 0 252, san ying road, kueisan industrial zone, taoyuan shien, 333, taiwan, r .o.c. tel: 886-3-3591968; fax: 886-3-3591991http://www.deltaww .com unit:mm/inch a = 5.8 0.2/0.228 0.008 b = 5.2 0.2/0.205 0.008 c = 4.5 0.35/0.177 0.0138 d = 1.2 0.2/0.047 0.008 2 1 at 25 : 1khz, 1v o c recommended pad l dcr i part no. (uh) ( ) max (adc) rated si65 - 100 10 0.10 1.5 si65 - 120 12 0.12 1.4 si65 - 150 15 0.14 1.3 si65 - 180 18 0.15 1.2 si65 - 220 22 0.18 1.1 si65 - 270 27 0.20 0.97 si65 - 330 33 0.23 0.88 si65 - 390 39 0.32 0.80 si65 - 470 47 0.37 0.72 si65 - 560 56 0.42 0.68 si65 - 680 68 0.46 0.61 si65 - 820 82 0.60 0.58 si65 - 101 100 0.70 0.52 si65 - 121 120 0.93 0.48 si65 - 151 150 1.10 0.40 si65 - 181 180 1.38 0.38 si65 - 221 220 1.57 0.35
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