? 2004 ixys all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c110 t c = 110 c16a i d110 t c = 110 c (ixg_16n60c2d1 diode) 11 a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t j = 125 c, r g = 22 ? i cm = 32 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3.5 screw) 0.55/5 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature 260 c soldering smd devices for 10s weight to-220 4 g to-263 2 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 16n60c2 25 a v ge = 0 v 16n60c2d1 50 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 12 a , v ge = 15 v 3.0 v note 2 t j =125 c 2.1 v ds99142a(3/04) hiperfast tm igbt c2-class high speed igbt ixga 16n60c2 ixgp 16n60c2 ixga 16n60c2d1 ixgp 16n60c2d1 v ces = 600 v i c25 =40a v ce(sat) = 3.0 v t fi(typ) =35ns d1 to-220 (i xgp ) g c e c (tab) c (tab) g c to-263 (i xga ) advance technical information features z very high frequency igbt z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications
ixys reserves the right to change limits, test conditions, and dimensions. ixgp 16n60c2 ixga 16n60c2d1 ixga 16n60c2 ixga 16n60c2d1 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 2.66 v t j = 125 c 1.66 i rm i f = 12 a; -di f /dt = 100 a/ s, v r = 100 v 2.5 a t rr v ge = 0 v; t j = 125 c 110 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 30 n s r thjc 2.5 k/w symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 12a; v ce = 10 v, 8 12 s note 2. c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 720 pf c oes 16n60c2 55 pf 16n60c2d1 65 pf c res 19 pf q g i c = 20a, v ge = 15 v, v ce = 0.5 v ces 32 nc q ge 6nc q gc 10 nc t d(on) 25 ns t ri 15 ns t d(off) 60 120 ns t fi 35 ns e off 60 100 j t d(on) 25 ns t ri 18 ns e on 16n60c2d1 0.38 mj t d(off) 120 ns t fi 70 ns e off 150 j r thjc 0.83 k/w r thck (ixgp) 0.5 k/w inductive load, t j = 125 c i c = 12a; v ge = 15 v v ce = 400 v; r g = r off = 22 ? note 1 inductive load, t j = 25 c i c = 12 a; v ge = 15 v v ce = 400 v; r g = r off = 22 ? note 1. notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j , or increased r g . 2. pulse test, t 300 s, duty cycle d 2 % pins: 1 - gate 2 - collector 3 - emitter 4 - collector to-220 outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 to-263 outline =
|
