dimensions inches millimeters h 0.126 0.004 dia. 3.2 0.1dia. j 0.10 2.5 k 0.061 1.55 l 0.06 1.5 m 0.05 1.2 n 0.03 0.8 p 0.02 0.5 dimensions inches millimeters a 0.93 0.02 23.7 0.5 b 0.47 min. 12.0 mon. c 0.39 max. 10.0 max. d 0.31 max. 8.0 max. e 0.18 max. 4.5 max. f 0.16 max. 4.0 max. g 0.126 0.008 3.2 0.2 description: the powerex CR3CM lead-mount phase control scrs are glass- passivated thyristors for use in low power control and rectification. these devices are molded silicone plastic types. features: h glass passivated applications: h static switch h motor control h strobe flasher ordering information: example: select the complete six or seven digit part number you desire from the table - i.e. CR3CM-8 is a 400 volt, 3 ampere phase control scr. v drm /v rrm type volts code CR3CM 400 -8 600 -12 powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (412) 925-7272 lead-mount, phase control scr 3 amperes/400-600 volts CR3CM outline drawing (conforms to jedec to-202) p-29 c c d h - dia. e k j n n m l j b a f g ? p p a ? cathode anode a gate ? anode outline drawing connection diagram a
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 CR3CM lead-mount, phase contr ol scr 3 amperes/400-600 v olts p-30 absolute maxim um ratings, t a = 25 c unless other wise specified ratings symbol CR3CM-8 CR3CM-12 units repetitiv e p eak off-state v oltage v drm 400 600 v olts repetitiv e p eak re v erse v oltage v rrm 400 600 v olts non-repetitiv e p eak re v erse v oltage v rsm 500 720 v olts dc re v erse v oltage v r(dc) 320 480 v olts dc f orw ard v oltage v d(dc) 320 480 v olts rms on-state current i t(rms) 4.7 4.7 amperes a v er age on-state current (nominal, see gr aphs) t a = 50 c i t(a vg) 3 3 amperes non-repetitiv e p eak surge , on-state current one cycle (60 hz) i tsm 90 90 amperes i 2 t f or fusing, t = 8.3 msec i 2 t 33 33 a 2 sec p eak gate p o w er dissipation p gm 0.5 0.5 w atts a v er age gate p o w er dissipation p g(a vg) 0.1 0.1 w atts p eak f orw ard gate current i fgm 0.3 0.3 amperes p eak f orw ard gate v oltage v fgm 6 6 v olts p eak re v erse gate v oltage v rgm 6 6 v olts stor age t emper ature t stg -40 to 125 -40 to 125 c oper ating j unction t emper ature t j -40 to 110 -40 to 110 c w eight C 1.6 1.6 gr ams electrical and thermal characteristics, t j = 25 c unless other wise specified characteristics symbol t est conditions min. t yp. max. units v oltage C bloc king state maxim ums p eak f orw ard leakage i drm t j = 110 c , v d = v drm C C 1.0 ma p eak re v erse leakage i rrm t j = 110 c , v r = v rrm C C 1.0 ma current C conducting state maxim ums p eak on-state v oltage v tm t c = 25 c , i tm = 10 a C C 1.6 v olts ther mal resistance , j unction-to-case r th(j-c) C C C 10 c/w gate C maxim um p ar ameters gate current to t r igger i gt v d = 6v , r l = 60 v , t j = 25 c 1 C 200 m a gate v oltage to t r igger v gt v d = 6v , r l = 60 v , t j = 25 c C C 0.8 v olts minim um non-tr igger ing gate v oltage v gd v d = 1/2v drm , r gk = 1k v , t j = 110 c 0.1 C C v olts
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 CR3CM lead-mount, phase contr ol scr 3 amperes/400-600 v olts p-31 0.6 3.8 3.4 3.0 2.6 2.2 1.8 1.4 1.0 maximum on-state characteristics instantaneous on-state current, i tm , (amperes) instantaneous on-state voltage, v t , (volts) 10 -1 10 0 10 1 10 2 t j = 25 o c transient thermal impedance characteristics (junction-to-case, junction-to-ambient) time, t, (s) transient thermal impedance, z th(j-c) , z th(j-a) , ( c/watt) 10 -3 10 -1 10 2 10 3 10 -2 10 0 10 1 10- 1 10 0 10 0 10 1 10 2 junction-to-ambient junction-to-case 10 -2 10 -1 10 0 10 1 10 2 gate characteristics gate current, i g , (ma) gate voltage, v g , (volts) 10 -1 10 0 10 1 10 2 10 3 v gd = 0.1v v fgm = 6v v gt = 0.8v i gt = 200 m a i fgm = 0.3a p gm = 0.5w p g(avg) = 0.1w t j = 25 0 20 40 60 80 100 120 140 160 maximum allowable case temperature (single-phase half waveform) average on-state current, i t(avg) , (amperes) maximum allowable case temperature, t c , ( c) 0 1 2 3 5 4 u = 30 60 90 180 resistive, inductive loads 120 u 360 0 20 40 60 80 100 120 140 160 allowable ambient temperature vs. average on-state current (single-phase half waveform) average on-state current, i t(avg) , (amperes) ambient temperature, t a , ( c) 0 0.4 0.8 1.2 1.6 u = 30 60 90 180 resistive, inductive loads natural convection without fin 120 u 360 0 20 40 60 80 100 120 140 160 allowable ambient temperature vs. average on-state current (single-phase half waveform) average on-state current, i t(avg) , (amperes) ambient temperature, t a , ( c) 0 1 2 3 5 4 u = 30 60 90 180 resistive, inductive loads natural convection fin: iron plate painted black 50 x 50 x t1.2 120 u 360 0 1 2 3 4 5 6 7 8 maximum on-state power dissipation (single-phase half waveform) average on-state current, i t(avg) , (amperes) maximum power dissipation, (watts) 0 5 4 3 2 1 u = 30 60 90 120 180 u 360 resistive, inductive loads 0 20 40 60 80 100 maximum surge current following rated load conditions cycles at 60 hz maximum peak surge current, i tsm , (amperes) 10 0 10 1 10 2 0 20 40 60 80 100 120 140 160 maximum allowable case temperature (single-phase full waveform) average on-state current, i t(avg) , (amperes) maximum allowable case temperature, t c , ( c) 0 1 2 3 5 4 u = 30 60 90 180 120 u 360 u resistive loads
p o were x, inc., 200 hillis street, y oungw ood, p ennsylv ania 15697-1800 (412) 925-7272 CR3CM lead-mount, phase contr ol scr 3 amperes/400-600 v olts 0 20 40 60 80 100 120 140 160 allowable ambient temperature vs. average on-state current (single-phase full waveform) average on-state current, i t(avg) , (amperes) ambient temperature, t a , ( c) 0 0.4 0.8 1.2 1.6 u = 30 180 u 360 u resistive loads natural convection without fin 120 90 60 0 20 40 60 80 100 120 140 160 allowable ambient temperature vs. average on-state current (single-phase full waveform) average on-state current, i t(avg) , (amperes) ambient temperature, t a , ( c) 0 1 2 3 4 5 u = 30 180 u 360 u resistive loads natural convection fin: iron plate painted black 50 x 50 x t1.2 120 90 60 gate trigger current vs. junction temperature (typical) junction temperature, t j , ( c) junction temperature, t j , ( c) gate trigger current, (t c) gate trigger current, (25 c) x 100% -40 0 40 80 120 10 0 10 1 10 2 10 3 r gk = 1k v i gt = 30 m a 190 m a gate trigger voltage vs. junction temperature (typical) gate trigger voltage, (t c) gate trigger voltage, (25 c) x 100% -40 0 40 80 120 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 typical example distribution holding current vs. junction temperature (typical) junction temperature, t j , ( c) -40 10 -1 10 0 10 1 10 2 0 40 80 120 holding current, i h , (ma) r gk = 1k v typical example distribution 0 50 100 150 200 250 300 350 400 holding current vs. gate-to-cathode resistance (typical) gate-to-cathode resistance, r gk , (k v ) 10 -1 10 0 10 1 10 2 holding current, ( r gk = rk v ) holding current, ( r gk = 1k v ) x 100% i gt = 25 m a t j = 25 c 50 m a breakover voltage vs. junction temperature (typical) junction temperature, t j , ( c) -40 0 20 40 60 80 100 120 140 160 breakover voltage, (t c) breakover voltage, (25 c) x 100% r gk = 1k v 0 40 80 120 repetitive peak off-state current vs. junction temperature (typical) junction temperature, t j , ( c) -40 0 20 40 60 80 100 120 140 160 repetitive peak off-state current, (t c) repetitive peak off-state current, (25 c) x 100% 0 40 80 120 0 1 2 3 4 5 6 7 8 maximum on-state power dissipation (single-phase full waveform) average on-state current, i t(avg) , (amperes) maximum power dissipation, (watts) 0 u = 30 60 90 120 180 resistive loads 1 2 3 4 5 u 360 u p-32
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