CPH5705 no.6591-1/5 features ? composite type with a pnp transistor and a schottky barrier diode contained in one package facilitating high-density mounting. ? the CPH5705 consists of two chips which are equivalent to the cph3109 and the sbs004, respec- tively. ? ultrasmall package facilitates miniaturization in end products. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [tr] collector-to-base voltage v cbo --30 v collector-to-emitter voltage v ceo --30 v emitter-to-base voltage v ebo -- 5 v collector current i c -- 3 a collector current (pulse) i cp -- 5 a base current i b --600 ma collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8mm) 0.9 w junction temperature tj 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v non-repetitive peak reverse surge voltage v rsm 15 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : pe sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6591 CPH5705 package dimensions unit : mm 2156 [CPH5705] 61500 ts im ta-2903 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. tr : pnp epitaxial planar silicon transistor sbd : sohottky barrier diode 1 : cathode 2 : collector 3 : base 4 : emitter 5 : anode sanyo : cph5 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 dc / dc converter applications
CPH5705 no.6591-2/5 ++ 50 input output v r r b r l v cc = ?v 220 f 470 f 10 s v be =5v pw=20 s i b2 i b1 d.c. 1% 50 100 10 t rr 10ma 100ma 100ma ?v duty 10% [ tr ][ sbd ] ?0i b1 = 20i b2 = i c = ?.5a electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [tr] collector cutoff current i cbo v cb =--12v, i e =0 --0.1 m a emitter cutoff current i ebo v eb =--4v, i c =0 --0.1 m a dc current gain h fe v ce =--2v, i c =--0.5a 200 560 gain bandwidth product f t v ce =--2v, i c =--0.5a 380 mhz output capacitance cob v cb =--10v, f=1mhz 25 pf collector-to-emitter saturation voltage v ce (sat) i c =--1.5a, i b =--30ma --155 --230 mv base-to-emitter saturation voltage v be (sat) i c =--1.5a, i b =--30ma --0.83 --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--10 m a, i e =0 --30 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --30 v emitter-to-base breakdown voltage v (br)ebo i e =--10 m a, i c =0 --5 v turn-on time t on see specified test circuit 50 ns storage time t stg see specified test circuit 270 ns fall time t f see specified test circuit 25 ns [sbd] reverse voltage v r i r =1ma 15 v forward voltage v f 1i f =0.5a 0.30 0.35 v v f 2i f =1a 0.35 0.40 v reverse current i r v r =6v 500 m a interterminal capacitance c v r =10v, f=1mhz 42 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit 15 ns thermal resistance rth j-a mounted on a ceramic board (600mm 2 5 0.8mm) 110 c/w electrical connection switching time test circuit trr test circuit cc ae b (top view)
CPH5705 no.6591-3/5 [tr] [tr] [tr] [tr] [tr] [tr] h fe -- i c collector current, i c -- a dc current gain, h fe it02118 100 1000 5 7 3 2 5 7 3 2 10 --0.1 3 25 3 25 --1.0 3 25 777 --10 --0.01 cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 3 2 2 7 5 10 100 37 2 --1.0 --10 55 3 2 it02120 f=1mhz v ce = --10v f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- ma 100 7 5 3 2 10 7 5 3 2 1000 --100 --10 25 37 2 5 323 7 --1000 it02119 --0.1 23 5 23 5 --1.0 23 5 77 7 --10 --0.01 --1.0 --0.1 --0.001 --0.01 5 7 2 3 5 7 2 3 5 7 2 3 v ce (sat) -- i c collector current, i c -- a collector -to-emitter saturation voltage, v ce (sat) -- v it02121 i c / i b =20 --0.1 23 5 23 5 --1.0 23 5 777 --10 --0.01 v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v it02122 --10 --0.1 --0.01 23 57 23 57 23 57 --1.0 v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a --1.0 --10 7 5 3 2 --0.1 7 5 3 2 i c / i b =50 it02123 ta=75 c --25 c 25 c ta= --25 c 75 c 25 c ta=75 c --25 c 25 c --10 --1.0 --0.01 --0.1 5 7 2 3 5 7 2 3 5 7 2 3 i c / i b =50 ta=75 c --25 c 25 c v ce = --2v --2.0 --1.2 --0.8 --1.6 --0.4 0 0 --400 --1000 --800 --600 --200 --4.0 --3.5 --3.0 --2.0 --1.5 --2.5 --1.0 --0.5 0 0 --0.4 --1.2 --0.8 --1.0 --0.2 --0.6 i c -- v ce collector-to-emitter voltage, v ce -- mv collector current, i c -- a --2ma --4ma --6ma --8ma --10ma --20ma --50ma i b =0 it02116 v ce = --2v ta=75 c --25 c 25 c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a it02117 --30ma --40ma [tr] [tr]
CPH5705 no.6591-4/5 q 360 [sbd] [sbd] [sbd] 51015 3 7 100 10 1.0 2 5 3 7 2 5 3 7 2 5 3 7 2 5 0.1 0.01 0 it02127 i r -- v r reverse current, i r -- ma reverse voltage, v r -- v 0.2 0.3 0.5 0.4 0.1 0 it02126 i f -- v f forward current, i f -- a forward voltage, v f -- v ta= 125 c 100 c 25 c 50 c 75 c 2 0.1 1.0 10 3 7 5 2 3 7 5 0.01 2 3 7 5 ta=125 c 25 c 50 c 75 c 100 c 180 360 r e q 0 0 0.2 0.3 0.5 0.4 0.7 0.6 0.8 0.1 0.2 0.4 0.6 1.4 1.2 1.0 0.8 average rectified current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w it02128 rectangular wave sine wave q rectangular wave q =60 w rectangular wave q =120 e rectangular wave q =180 r sine wave q =180 w [tr] [tr] a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v --1.0 2 5 7 3 2 5 7 3 2 5 7 3 --10 --0.1 --0.01 --0.1 5 37 25 37 25 37 2 --1.0 --10 --100 i cp = --5a 100ms 500 s 100 s dc operation mounted on a ceramic board (600mm 2 5 0.8mm) 10ms 1ms i c = --3a it02124 collector dissipation, p c -- w ambient tamperature, ta -- c 0 1.0 0.6 0.4 0.8 0.2 0.9 0.5 0.3 0.7 0.1 20 060 40 80 100 140 120 160 p c -- ta it02125 ta=25 c single pulse mounted on ceramic board (600mm 2 5 0.8mm)
CPH5705 no.6591-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of june, 2000. specifications and information herein are subject to change without notice. ps
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