gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh gunter semiconductor gmbh GFCG50 n channel high voltage, power mosfet chip specification general description: * advanced process technology * dynamic dv/dt rating * 150 operating temperature * fast switching * fully avalanche rated * high breakdown voltage mechanical data: d29 dimension 6.50mm x 7.32mm thickness: 480 ? m metallization : top : : al backside : crniag / au suggested bonding conditions: die mounting: solder perform 95/5 pbsn or 92.5./2.5/5 pbagin source bonding wire : 10 mil al absolute maximum rating @ta=25 characteristics symbol limit unit test conditions drain-to-source breakdown voltage v(br)dss 1000 v vgs=0v, id=250 ? static drain-to - source on-resistance rds(on) 2 ? vgs=10v, id=3.6 continuous drain current ( in target package) id@25 5a vgs=10v continuous drain current ( in target package) id@100 3.2 a vgs=10v operation junction tj -55~150 storage temperature t str -55~150 target device: irfpf50 to-247ac p d 190 w @tc=25
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