zener diode UMZ36N l applications l dimensions (unit : mm) l land size figure (unit : mm) voltage regulation (anode common dual chips) l features 1)small mold type. (umd3) 2)high reliability l construction l structure silicon epitaxial planer l absolute maximum ratings (ta=25 ? c) symbol unit p mw tj ? c tstg ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit zener voltage v z 35.07 - 36.87 v i z =5ma reverse current i r - - 0.10 a v r =27v conditions l taping dimensions (unit : mm) parameter limits power dissipation (*1) 200 junction temperature 150 storage temperature - 55 to + 150 (*1)total of 2 elements parameter umd3 rohm : umd3 jeita : sc - 70 jedec : sot - 323 dot (year week factory) each lead has same dimension 1/3 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 0.9min. 0.8min. 1.6 0.65 1.3 4.00.1 4.00.1 2.00.05 1.550.05 3.50.05 1.750.1 8.00.2 0.50.05 2.40.1 2.250.1 0 5.50.2 1.250.1 2.40.1 0.30.1 00.1 2.00.2 2.10.1 1.250.1 0.30.1 `?? ? (3) 1.30.1 0.65 0.65 (2) (1) 0.150.05 0.90.1 0.70.1 0.1min 00.1
UMZ36N 0.01 0.1 1 10 30 35 40 45 ta=150 c ta=75 c ta=25 c ta=125 c 35 35.5 36 36.5 37 37.5 38 38.5 39 39.5 40 1 10 100 1000 10000 0 3 6 9 12 15 18 21 24 27 ta=125 c ta=25 c ta=75 c ta=150 c zener current:iz(ma) zener voltage:vz(v) reverse voltage v r (v) v r - i r characteristics reverse current:i r (pa) 1 10 100 0 1 2 3 4 5 6 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz vz dispersion map zener voltage:vz( ) ave:36.17v ta=25 c i z =5ma n=30pcs 0 5 10 15 20 25 30 35 40 45 50 i r dispersion map reverse current:i r (pa) ta=25 c v r =27v n=30pcs ave:6.57pa 5 6 7 8 9 10 ct dispersion map capacitance betweenterminals:ct(pf) ave:8.79pf ta=25 c f=1mhz v r =0v n=10pcs 2/3 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
UMZ36N 10 100 1000 10000 0.1 1 10 zener current(ma) zz - iz characteristics dynamic impedance:zz( ) 10 100 1000 0.001 0.01 0.1 1 10 100 1000 time:t(s) rth(j - a) rth(j - c) on glass - epoxy substrate rth - t characteristics transient thermal impedance:rth ( c /w) 0 5 10 15 20 25 30 c=200pf r=0 c=150pf r=330 c=100pf r=1.5k no break at 30kv ave .3.88kv ave .19.7kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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