j/SST108 series vishay siliconix document number: 70231 s-04028?rev. e, 04-jun-01 www.vishay.com 7-1 n?channel jfets j108 SST108 j109 sst109 j110 sst110
part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j/SST108 ?3 to ?10 8 20 4 j/sst109 ?2 to ?6 12 20 4 j/sst110 ?0.5 to ?4 18 20 4
low on-resistance: j108 <8 fast switching?t on : 4 ns low leakage: 20 pa low capacitance: 11 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error? excellent accuracy good frequency response eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters the j/SST108 series is designed with high-performance analog switching applications in mind. it features low on-resistance, good off-isolation, and fast switching. the SST108 series is comprised of surface-mount devices featuring the lowest r ds(on) of any to-236 (sot-23) jfet device. the to-226aa (to-92) plastic package provides a low-cost option. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products packaged in to-206ac (to-52), see the 2n5432/5433/5434 data sheet. d s g to-236 (sot-23) top view 2 3 1 *marking code for to-236 SST108 (i8)* sst109 (i9)* sst110 (i0)* top view s g to-226aa (to-92) d 1 2 3 j108, j109, j110
j/SST108 series vishay siliconix www.vishay.com 7-2 document number: 70231 s-04028 ? rev. e, 04-jun-01
gate-drain, gate-source voltage ? 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
limits j/SST108 j/sst109 j/sst110 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 32 ? 25 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 5 v, i d = 1 a ? 3 ? 10 ? 2 ? 6 ? 0.5 ? 4 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 80 40 10 ma v gs = ? 15 v, v ds = 0 v ? 0.01 ? 3 ? 3 ? 3 gate reverse current i gss t a = 125 c ? 5 gate operating current i g v dg = 10 v, i d = 10 ma ? 0.01 na v ds = 5 v, v gs = ? 10 v 0.02 3 3 3 drain cutoff current i d(off) t a = 125 c 1.0 drain-source on-resistance r ds(on) v gs = 0 v, v ds 0.1 v 8 12 18 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs 17 common-source output conductance g os v ds = 5 v, i d = 10 ma, f = 1 khz 0.6 ms drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 8 12 18 common-source v ds = 0 v sst 60 common-source input capacitance c iss v gs = 0 v f = 1 mhz j series 60 85 85 85 common-source reverse v ds = 0 v sst 11 pf common-source reverse transfer capacitance c rss v gs = ? 10 v f = 1 mhz j series 11 15 15 15 equivalent input noise voltage e n v dg = 5 v, i d = 10 ma f = 1 khz 3.5 nv ? hz switching t d(on) 3 turn-on time t r v dd = 1.5 v, v gs(h) = 0 v 1 t d(off) v dd = 1.5 v, v gs(h) = 0 v see switching diagram 4 ns turn-off time t f 18 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nip b. pulse test: pw 300 s duty cycle 3%.
j/SST108 series vishay siliconix document number: 70231 s-04028 ? rev. e, 04-jun-01 www.vishay.com 7-3 40 ? 55 25 125 32 24 16 8 0 ? 15 85 ? 35 5 45 65 105 20 0 ? 8 ? 10 ? 4 8 4 0 50 20 10 0 1 10 100 1000 800 400 200 0 16 12 600 40 30 ? 2 ? 6 5 0 ? 6 ? 8 ? 10 4 3 2 1 0 30 01520 10 525 24 18 12 6 0 ? 2 ? 4 100 06810 40 20 0 80 60 24 on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. drain current turn-on switching turn-off switching on-resistance vs. temperature output characteristics switchng time (ns) switching time (ns) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) t a ? temperature ( c) v ds ? drain-source voltage (v) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) r ds @ i d = 10 ma, v gs = 0 v i dss @ v ds = 15 v, v gs = 0 v i dss r ds t a = 25 c v gs(off) = ? 2 v ? 4 v ? 8 v v gs(off) = ? 2 v ? 4 v ? 8 v i d = 10 ma r ds changes x 0.7%/ c v gs = 0 v t r approximately independent of i d v dd = 1.5 v, r g = 50 ? v gs(l) = ? 10 v t d(on) @ i d = 25 ma t d(on) @ i d = 10 ma t r t d(off) v gs ( off) = ? 2 v t d(off) independent of device v gs(off) v dd = 1.5 v, v gs(l) = ? 10 v v gs(off) = ? 8 v ? 0.4 v ? 0.6 v ? 0.8 v ? 0.2 v v gs(off) = ? 2 v t f i dss ? saturation drain current (ma) i d ? drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? )
j/SST108 series vishay siliconix www.vishay.com 7-4 document number: 70231 s-04028 ? rev. e, 04-jun-01 200 0 160 80 40 0 ? 8 ? 10 ? 4 50 40 20 10 0 120 30 ? 2 ? 6 100 0 ? 12 ? 16 ? 8 ? 4 ? 20 40 20 0 80 60 100 10 1 1 10 100 100 10 1 10 100 1 k 100 k 10 k 100 10 1 0.1 10 100 50 capacitance vs. gate-source voltage transconductance vs. drain current forward transconductance and output conductance vs. gate-source cutoff voltage noise voltage vs. frequency capacitance (pf) v gs ? gate-source voltage (v) i d ? drain current (ma) f ? frequency (hz) v gs(off) ? gate-source cutoff voltage (v) v ds = 0 v f = 1 mhz c iss c rss v ds = 5 v f = 1 khz t a = ? 55 c 125 c v ds = 5 v i d = 10 ma g fs and g os @ v ds = 5 v v gs = 0 v, f = 1 khz g fs g os common gate input admittance (ms) f ? frequency (mhz) g ig b ig t a = 25 c v dg = 20 v i d = 20 ma 40 ma 20 gate leakage current 04812 1 pa 10 pa 100 pa 1 na 10 na 16 20 100 na v dg ? drain-gate voltage (v) i gss @ 125 c t a = 125 c t a = 25 c i d =10 ma 5 ma i gss @ 25 c 10 ma 1 ma v gs(off) = ? 4 v 25 c 5 ma 1 ma i g ? gate leakage e n ? noise voltage nv / hz g fs ? forward transconductance (ms) g os ? output conductance ( s) g fs ? forward transconductance (ms)
j/SST108 series vishay siliconix document number: 70231 s-04028 ? rev. e, 04-jun-01 www.vishay.com 7-5 100 10 1 0.1 10 100 10 1.0 0.1 0.01 10 100 100 10 1 0.1 10 100 50 50 50 common gate forward admittance common gate reverse admittance common gate output admittance ? g fg g og b og ? g rg ? b rg t a = 25 c v dg = 20 v i d = 20 ma (ms) f ? frequency (mhz) (ms) f ? frequency (mhz) (ms) f ? frequency (mhz) t a = 25 c v dg = 20 v i d = 20 ma t a = 25 c v dg = 20 v i d = 20 ma 20 20 20 b fg
j/SST108 j/sst 1 09 j/sst110 v gs(l ) ? 12 v ? 7 v ? 5 v r l * 150 150 150 i d(on) 10 ma 10 ma 10 ma *non-inductive
rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf 51 ? 51 ? 1 k ? v in scope v dd r l out v gs(h) v gs(l)
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