c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 www. ruichips .com ru 8205c6 n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =2 5 c unless otherwise noted) v dss drain - source voltage 20 v gss gate - source voltage 12 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c 1.7 a mounted on large heat sink i d p 300 s pulse drain current tested t a =25 c 24 a t a =25 c 6 i d continuous drain current ( vgs=4.5v) t a = 7 0 c 4.5 a t a =25 c 1. 25 p d maximum power dissipation t a = 7 0 c 0.8 w r q j a thermal resistance - junction to ambient 100 c /w ? 20 v / 6 a, r ds ( on ) = 2 2 m w (typ.) @ v gs = 4.5 v r ds ( on ) = 30 m w (typ.) @ v gs = 2.5 v ? super high dense cell design ? reliable and rugged ? lead free and green available ? power management absolute maximum ratings sot - 23 - 6 dual n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 2 www. ruichips .com ru 8205c6 electrical characteristics ( t a =25 c unless otherwise noted) r u 8205 c6 symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 2 0 v v ds = 2 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 0 .5 0.7 1 . 5 v i gss gate leakage current v gs = 1 0 v, v ds =0v 100 n a v gs = 4.5 v, i ds = 6 a 2 2 30 m w r ds ( on ) drain - source on - state resistance v gs = 2 .5 v, i ds = 5 a 3 0 40 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 a, v gs =0v 1 v dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 8 w c iss input capacitance 5 80 c oss output capacitance 1 2 0 c rss reverse transfer capacitance v gs =0v, v ds = 10 v, frequency=1.0mhz 95 pf t d ( on ) turn - on delay time 5 t r turn - on rise time 1 1 t d ( off ) turn - off de lay time 3 8 t f turn - off fall time v dd = 10 v, r l = 1. 7 w , i ds = 6 a, v gen = 4.5 v, r g = 6 w 13 ns gate charge characteristics q g total gate charge 1 0 14 q gs gate - source charge 1.5 q gd gate - drain charge v ds = 16 v, v gs = 4.5 v, i ds = 6 a 3. 4 nc
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 3 www. ruichips .com ru 8205c6 typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transi ent v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 4 www. ruichips .com ru 8205c6 typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 5 www. ruichips .com ru 8205c6 typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 6 www. ruichips .com ru 8205c6 avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 7 www. ruichips .com ru 8205c6 ordering and marking information device marki ng package packaging quantity reel size tape width RU8205C6 4 x yww sot - 23 - 6 tape&reel 3000 7 8mm the following characters could be different and means : x =assembly site code y =year ww =work week
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 8 www. ruichips .com ru 8205c6 package information sot - 23 - 6 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min m ax min max a 1.050 1.250 0.041 0.049 e 1.500 1.700 0.059 0.067 a1 0.000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 1.050 1.150 0.041 0.045 e 0.950(bsc) 0.037(bsc) b 0.300 0.500 0.012 0.020 e1 1.800 2.000 0.071 0.079 c 0.100 0.200 0.004 0.008 l 0. 300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8
c opyright ruichips semiconductor co . , ltd rev . a C nov ., 2011 9 www. ruichips .com ru 8205c6 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : inve stor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - s z@ruichips.com
|
