vs-8ewf10s-m3, VS-8EWF12S-M3 soft recovery series www.vishay.com vishay semiconductors revision: 17-nov-11 1 document number: 93377 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mountable fast soft recovery diode, 8 a features ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition applications ? output rectification and freewheeling diode in inverters, choppers and converters ? input rectifications wher e severe restrictions on conducted emi sh ould be met description the vs-8ewf..s-m3 fast soft re covery rectifier series has been optimized for combined sh ort reverse recovery time, low forward voltage drop and low leakage current. the glass passivation ensures stable reliable operation in the most severe te mperature and power cycling conditions. note (1) connecting one pin only product summary package d-pak (to-252aa) i f(av) 8 a v r 1000 v, 1200 v v f at i f 1.3 v i fsm 110 a t rr 80 ns t j max. 150 c diode variation single die snap factor 0.6 base common cathode + 3 anode 2 1 anode -- d-pak major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 8 a v rrm 1000/1200 v i fsm 110 a v f 8 a, t j = 25 c 1.3 v t rr 1 a, 100 a/s 80 ns t j range - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-8ewf10s-m3 1000 1100 4 VS-8EWF12S-M3 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 96 c, 180 conduction half sine wave 8 a maximum peak one cycle non-repetitive surge current i fsm (1) 10 ms sine pulse, rated v rrm applied 93 10 ms sine pulse, no voltage reapplied 110 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 43 a 2 s 10 ms sine pulse, no voltage reapplied 61 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 432 a 2 ? s
vs-8ewf10s-m3, VS-8EWF12S-M3 soft recovery series www.vishay.com vishay semiconductors revision: 17-nov-11 2 document number: 93377 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (2) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 materi al 4 oz. (140 m) copper 40 c/w for recommended footprint and soldering techniques refer to application note #an-994 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 8 a, t j = 25 c 1.3 v forward slope resistance r t t j = 150 c 25.6 m ? threshold voltage v f(to) 0.93 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 4 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 8 apk 25 a/s t j = 25 c 270 ns reverse recovery current i rr 4.2 a reverse recovery charge q rr 1c snap factor s 0.6 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 2.5 c/w typical thermal resistance, junction to ambient (pcb mount) r thja (1) 50 soldering temperature t s for 10 s 240 c approximate weight 1g 0.03 oz. marking device case style d-pak (to-252aa) 8ewf10s 8ewf12s i fm t rr di dt i rr q rr t t a t b
vs-8ewf10s-m3, VS-8EWF12S-M3 soft recovery series www.vishay.com vishay semiconductors revision: 17-nov-11 3 document number: 93377 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 1 80 29 110 130 90 3 5 140 4 60 7 8ewf.. s series r thjc (dc) = 2.5 c/w conduction angle 30 60 90 120 180 8 6 70 100 120 ? 150 04 maximum allowable case temperature (c) average forward current (a) 8 110 14 120 2 130 140 100 60 6 8ewf..s series r thjc (dc) = 2.5 c/w ? conduction period 30 60 90 120 180 dc 70 80 90 12 10 2 0 12 0 maximum average forward power loss (w) average forward current (a) 5 6 9 23 1 4 7 4 8 10 180 120 90 60 30 conduction angle 8ewf..s series t j = 150 c rms limit 8 6 ? 0 18 0 maximum average forward power loss (w) average forward current (a) 10 14 2 6 14 2 6 16 12 8 4 180 120 90 60 30 dc ? conduction period 8ewf..s series t j = 150 c rms limit 12 10 8 4 100 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 20 80 40 60 at any rated load condition and with rated v rrm applied following surge. initial t j = t j max. at 60 hz 0.0083 s at 50 hz 0.0100 s 20 0.01 0.1 peak half sine wave forward current (a) pulse train duration (s) 0 40 60 120 10 1 80 100 maximum non-repetitive surge current versus pulse train duration. initial t j = t j max. no voltage reapplied rated v rrm reapplied
vs-8ewf10s-m3, VS-8EWF12S-M3 soft recovery series www.vishay.com vishay semiconductors revision: 17-nov-11 4 document number: 93377 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 1000 10 1 1.5 3.5 instantaneous forward current (a) instantaneous forward voltage (v) 100 4.0 1.0 2.5 0.5 2.0 3.0 8ewf..s series t j = 25 c t j = 150 c 4.5 0.6 0 40 120 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.2 160 0.4 0 80 8ewf..s series t j = 25 c i fm = 10 a i fm = 1 a i fm = 5 a i fm = 2 a i fm = 8 a 0.1 0.3 0.5 0 0 80 120 160 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.4 0.6 0.2 0.8 40 8ewf..s series t j = 150 c i fm = 10 a i fm = 1 a i fm = 5 a i fm = 2 a i fm = 8 a 0 0 80 120 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1.2 0.4 0.8 2.0 160 40 8ewf..s series t j = 25 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a 1.6 0 40 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1 2 3 4 5 80 120 8ewf..s series t j = 150 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a 0 160 20 0 0 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 8 16 4 12 40 8ewf..s series t j = 25 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a
vs-8ewf10s-m3, VS-8EWF12S-M3 soft recovery series www.vishay.com vishay semiconductors revision: 17-nov-11 5 document number: 93377 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 10 0 0 80 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 20 5 15 40 120 160 8ewf..s series t j = 150 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a 0.1 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 1 10 1 steady state value (dc operation) 8ewf..s series single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
vs-8ewf10s-m3, VS-8EWF12S-M3 soft recovery series www.vishay.com vishay semiconductors revision: 17-nov-11 6 document number: 93377 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-8ewf10s-m3 75 3000 anti static plastic tubes vs-8ewf10str-m3 2000 2000 13" diameter reel vs-8ewf10strl-m3 3000 3000 13" diameter reel vs-8ewf10strr-m3 3000 3000 13" diameter reel VS-8EWF12S-M3 75 3000 anti static plastic tubes vs-8ewf12str-m3 2000 2000 13" diameter reel vs-8ewf12strl-m3 3000 3000 13" diameter reel vs-8ewf12strr-m3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95176 packaging information www.vishay.com/doc?95033 1 - vishay semiconductors product 2 - current rating (8 = 8 a) 3 - circuit configuration: e = single diode 4 - package: w = d-pak 5 - type of silicon: f = fast soft recovery rectifier 6 - voltage code x 100 = v rrm 7 - s = surface mountable 8 - tr = tape and reel trr = tape and reel (right oriented) trl = tape and reel (left oriented) 10 = 1000 v 12 = 1200 v - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 9 device code 5 1 3 2 4 6 7 8 9 vs- 8 e w f 12 s tr -m3
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