mmbfj110 ? n-channel switch ? 2011 fairchild semiconductor corporation www.fairchildsemi.com mmbfj110 rev. a0 1 april 2011 mmbfj110 n-channel switch features ? this device is designed for digital switching applications where very low on resistance is mandatory. ? sourced from process 58. absolute maximum ratings* t a =25 c unless otherwise noted * these ratings are limiting values above which the servic eability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 c. 2) these are steady state limit s. the factory should be co nsulted on applications invo lving pulsed or low duty cycle operations. thermal characteristics* t a =25 c unless otherwise noted * device mounted on a minimum pad. electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter value units v dg drain-gate voltage 25 v v gs gate-source voltage -25 v i gf forward gate current 10 ma t j junction temperature 150 c t stg storage temperature range -55 to +150 c symbol parameter value units p d total device dissipation derate above 25 c 460 3.68 mw mw/ c r ja thermal resistance, junction to ambient 270 c/w symbol parameter conditions min. max. units off characteristics v (br)gss gate-source breakdown voltage i g = -10 a, v ds = 0 -25 v i gss gate reverse current v gs = -15v, v ds = 0 v gs = -15v, v ds = 0, t a = 100 c -3.0 -200 na na v gs (off) gate-source cutoff voltage v ds = 15v, i d = 10na -0.5 -4.0 v on characteristics i dss zero-gate voltage drain current* v ds = 15v, i gs = 0 10 ma r ds (on) drain-source on resistance v ds 0.1v, v gs = 0 18 small signal characteristics c dg (on) c sg (off) drain-gate &source-gate on capacitance v ds = 0, v gs = 0, f = 1.0mhz 85 pf c dg (off) drain-gate off capacitance v ds = 0, v gs = -10v, f = 1.0mhz 15 pf c sg (off) source-gate off capacitance v ds = 0, v gs = -10v, f = 1.0mhz 15 pf 1. drain 2. source 3. gate marking : 110 supersot-3 1 2 3
mmbfj110 ? n-channel switch ? 2011 fairchild semiconductor corporation www.fairchildsemi.com mmbfj110 rev. a0 2 typical performan ce characteristics figure 1. common drain-source figure 2. common drain-source figure 3. capacitance vs gate-source voltage figure 4. parameter interactions figure 5. normalized drain resistance vs bias voltage figure 6. noise voltage vs frequency common drain-source 0 0.4 0.8 1.2 1.6 2 0 20 40 60 80 100 v - drain-source voltage (v) i - drain current (ma) ds d t = 25 ? typ v = - 5.0 v gs(off) a - 4.0 v - 5.0 v - 3.0 v - 2.0 v - 1.0 v v = 0 v gs c common drain-source 012345 0 10 20 30 40 50 v - drain-source voltage (v) i - drain current (ma) ds d - 0.4 v - 0.5 v - 0.3 v - 0.2 v - 0.1 v v = 0 v gs t = 25 ? typ v = - 0.7 v gs(off) a c common drain-source -20 -16 -12 -8 -4 0 10 100 v - gate-source voltage (v) c (c ) - capacitance (pf) gs ts c (v = 5.0v) iss f = 0.1 - 1.0 mhz ds c (v = 0 ) rss ds rs c parameter interactions 0.1 0.5 1 5 10 5 10 50 100 10 50 100 500 1,000 v - gate cutoff voltage (v) r - drain "on" resistance gs (off) ds i @ v = 5.0v, v = 0 pulsed r @ v = 100mv, v = 0 v @ v = 5.0v, i = 3.0 na gs(off) dss r ds i dss ( ) ds ds d gs gs dss i - drain current (ma) ds ds _ __ _ _ normalized drain resistance vs bias voltage 00.20.40.60.81 1 2 5 10 20 50 100 v /v - normalized gate-source voltage (v) r - normalized resistance gs ds r = ds v @ 5.0v, 10 a gs(off) r ds ________ v gs(off) v gs 1 - gs(off) noise voltage vs frequency 0.01 0.03 0.1 0.5 1 2 10 100 1 5 10 50 100 f - frequency (khz) e - noise voltage (nv / hz) n v = 10v bw = 6.0 hz @ f = 10 hz, 100 hz = 0.21 @ f 1.0 khz dg i = 10 ma d i = 1.0 ma d
mmbfj110 ? n-channel switch ? 2011 fairchild semiconductor corporation www.fairchildsemi.com mmbfj110 rev. a0 3 typical performan ce characteristics (continued) figure 7. switching turn-on time vs gate-source cutoff voltage figure 8. switching turn-on time vs drain current figure 9. on resistance vs drain current figure 10. output conductance vs drain current figure 11. transconductance vs drain current figure 12. power dissipation vs ambient temperature on gs(off) switching turn-on time vs gate-source cutoff voltage -10 -8 -6 -4 -2 0 0 2 4 6 8 10 v - gate-source cutoff voltage (v) t - turn-on time (ns) t = 25 ? v = 1.5v v = - 12v gs(off) a dd i = 30 ma d i = 10 ma d c gs(off) on switching turn-on time vs drain current 0 5 10 15 20 25 0 10 20 30 40 50 i - drain current (ma) t - turn-off time (ns) d off v = - 8.5v v = - 5.5v v = - 3.5v gs(off) gs(off) gs(off) t = 25 ? v = 1.5v v = - 12v gs(off) a dd c on resistance vs drain current 1 10 100 1 5 10 50 100 i - drain current (ma) r - drain "on" resistance d ds v = - 3.0v gs(off) 25 ? ( ) 125 ? 25 ? 125 ? v = - 5.0v gs(off) v = 0 gs - 55 ? c c c c c output conductance vs drain current 0.1 1 10 1 10 100 i - drain current (ma) g - output conductance ( mhos) d os v gs(off) t = 25 ? f = 1.0 khz v = 5.0v dg a 10v 15v 20v 5.0v 5.0v 10v 15v 20v - 4.0v 10v 15v 20v - 2.0v - 1.0v c transconductance vs drain current 0.1 1 10 1 10 100 i - drain current (ma) g - transconductance (mmhos) d fs v = - 1.0v v = - 3.0v v = - 5.0v gs(off) gs(off) gs(off) t = 25 ? v = 10v f = 1.0 khz a dg t = - 55 ? t = 25 ? t = 125 ? a a a c c c c 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 power dissipation, [mw] ambient temperature, t a [ o c]
mmbfj110 ? n-channel switch ? 2011 fairchild semiconductor corporation www.fairchildsemi.com mmbfj110 rev. a0 4 physical dimensions supersot-3 dimensions in millimeters
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