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inchange semiconductor product specification silicon npn power transistors BU626A description ? with to-3 package ?short switching times. ? high dielectric strength. applications ? for use in power supply units of tv receives. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 15 a p t total power dissipation t c =25 ?? 100 w t j junction temperature 175 ?? t stg storage temperature -65~175 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.5 k/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU626A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0; 400 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0; 7 v v cesat collector-emitter saturation voltage i c =8a;i b =2.5 a 3.3 v v besat base-emitter saturation voltage i c =8a;i b =2.5 a 2.2 v i ces collector cut-off current v ce =1000v;v be =0 1.0 ma h fe-1 dc current gain i c =10a ; v ce =1.5v 10 h fe-2 dc current gain i c =2.5a ; v ce =10v 15 f t transition frequency i c =0.1a ; v ce =10v 6 mhz t f fall time i c =8a;i b1 =-i b2 =2.5a; 1 | s inchange semiconductor product specification 3 silicon npn power transistors BU626A package outline fig.2 outline dimensions |
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