stp stp stp stp 4931 4931 4931 4931 dual p channel enhancement mode mosfet - 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4931 200 9 . v1 description description description description stp 4931 is the dual p-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other ba ttery powered circuits where hight-side switching. pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 feature feature feature feature ? - 2 0v/- 8.5 a, r ds(on) = 20 m (typ.) @v gs =- 4.5 v ? - 2 0v/- 8.0 a, r ds(on) = 25 m @v gs = - 2.5 v ? - 2 0v/- 5.0 a, r ds(on) = 3 5 m @v gs = - 1.8 v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
stp stp stp stp 4931 4931 4931 4931 dual p channel enhancement mode mosfet - 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4931 200 9 . v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical unit unit unit unit drain-source voltage v dss - 2 0 v gate-source voltage v gss 12 v continuous drain current (tj=150 ) t a =25 t a =70 i d - 8.5 - 7.0 a pulsed drain current i dm -30 a continuous source current (diode conduction) i s -2.3 a power dissipation t a =25 t a =70 p d 2. 8 1.8 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 70 /w
stp stp stp stp 4931 4931 4931 4931 dual p channel enhancement mode mosfet - 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4931 200 9 . v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua - 2 0 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250 ua -0.35 - 0.9 v gate leakage current i gss v ds =0v,v gs = 12 v 100 na zero gate voltage drain current i dss t j =55 v ds =- 16 v,v gs =0v -1 ua v ds =- 2 0v,v gs =0v - 10 on-state drain current i d(on) v ds=- 5v,v gs = 4.5 v -25 0 a drain-source on-resistance r ds(on) v gs =- 4.5 v, i d =- 8.5 a v gs = - 2.5 v, i d =- 8.0 a v gs =- 1.8 v,i d =- 5.0 a 0.0 16 0.0 20 0.0 28 0.020 0.025 0.035 forward tran conductance g fs v ds =- 5.0 v,i d =- 10 a 36 s diode forward voltage v sd i s =-2. 5 a,v gs =0v -0.8 -1.2 v dynamic dynamic dynamic dynamic total gate charge q g v ds =-1 0 v,v gs =- 5.0 v i d - 10 a 30 45 nc gate-source charge q gs 4. 5 gate-drain charge q gd 8 .0 input capacitance ciss v ds = -15 v,vgs= 0 v f=1mhz 2670 pf output capacitance coss 520 reverse transfer c apacitance crss 480 turn-on time t d(on) tr v dd = - 1 0 v,r l =15 i d =-1.0a,v gen =- 4.5 v r g =6 25 40 ns 45 70 turn-off time t d(off) tf 145 240 7 0 115
stp stp stp stp 4931 4931 4931 4931 dual p channel enhancement mode mosfet - 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4931 200 9 . v1 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note )
stp stp stp stp 4931 4931 4931 4931 dual p channel enhancement mode mosfet - 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4931 200 9 . v1 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note )
stp stp stp stp 4931 4931 4931 4931 dual p channel enhancement mode mosfet - 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stp 4931 200 9 . v1 sop-8 sop-8 sop-8 sop-8 package package package package outline outline outline outline
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