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inchange semiconductor product specification silicon pnp power transistors BD231 description ? ? with to-126 package ? complement to type bd230 ? high current (max:-1.5a) ? low voltage (max: -80v) applications ? drive stage in tv circuits pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -1.5 a i cm collector current-peak -3 a i bm base current-peak -1 a p d total power dissipation t mb ?62 ?? 12.5 w p d total power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? t amb operating ambient te mperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors BD231 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.8 v v besat base-emitter saturation voltage i c =-1a; i b =-0.1a -1.1 v v be base-emitter on voltage i c =-1a ; v ce =-2v -1.3 v i cbo collector cut-off current v cb =-30v; i e =0 -0.1 | a i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 | a h fe-1 dc current gain i c =-5ma ; v ce =-2v 40 h fe-2 dc current gain i c =-150ma ; v ce =-2v 40 250 h fe-3 dc current gain i c =-1a ; v ce =-2v 25 f t transition frequency i c =-50ma ; v ce =-5v 50 mhz
inchange semiconductor product specification 3 silicon pnp power transistors BD231 package outline fig.2 outline dimensions

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