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| inchange semiconductor product specification silicon npn power transistors BU931P description with to-3pn package darlington high breakdown voltage applications high ruggedness electronic ignitions. high voltage ignition coil driver pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cm collector current -peak 30 a i b base current 1 a i bm base current -peak 5 a p t total power dissipation t c =25 135 w t j max.operating junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-case thermal resistance junction case 1.1 /w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU931P charact eristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1 a ;i b =0;l=10mh 400 v v cesat-1 collector-emitter saturation voltage i c =7a ;i b =0.07a 1.6 v v cesat-2 collector-emitter saturation voltage i c =8a; i b =0.1 a 1.8 v v cesat-3 collector-emitter saturation voltage i c =10a; i b =0.25 a 1.8 v v besat-1 base-emitter saturation voltage i c =7a ;i b =0.07a 2.2 v v besat-2 base-emitter saturation voltage i c =8a; i b =0.1 a 2.4 v v besat-3 base-emitter saturation voltage i c =10a; i b =0.25 a 2.5 v i ces collector cut-off current v ce =500v ; v be =0; t j =125 0.1 0.5 ma i ceo collector cut-off current v ce =450v ; i b =0; t j =125 0.1 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 20 ma h fe dc current gain i c =5a ; v ce =10v 300 v f diode forward voltage i f =10a 2.5 v inchange semiconductor product specification 3 silicon npn power transistors BU931P package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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