? semiconductor components industries, llc, 2012 september, 2012 ? rev. 5 1 publication order number: 2n7002w/d 2n7002w, 2V7002W small signal mosfet 60 v, 340 ma, single, n ? channel, sc ? 70 features ? esd protected ? low r ds(on) ? small footprint surface mount package ? these devices are pb ? free, halogen free/bfr free and are rohs compliant ? 2v prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable applications ? low side load switch ? level shift circuits ? dc ? dc converter ? portable applications i.e. dsc, pda, cell phone, etc. maximum ratings (t j = 25 c unless otherwise stated) rating symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 20 v drain current (note 1) steady state t a = 25 c t a = 85 c t < 5 s t a = 25 c t a = 85 c i d 310 220 340 240 ma power dissipation (note 1) steady state t < 5 s p d 280 330 mw pulsed drain current (t p = 10 s) i dm 1.4 a operating junction and storage temperature range t j , t stg ? 55 to +150 c source current (body diode) i s 250 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c gate ? source esd rating (hbm, method 3015) esd 900 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 450 c/w junction ? to ? ambient ? t 5 s (note 1) r ja 375 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) device package shipping ? ordering information 2n7002wt1g 3000/tape & reel simplified schematic sc ? 70/sot ? 323 case 419 style 8 71 m 71 = device code m = date code = pb ? free package marking diagram & pin assignment 3 2 1 drain gate source http://onsemi.com sc ? 70 (pb ? free) 60 v 1.6 @ 10 v r ds(on) max 340 ma i d max (note 1) v (br)dss ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 2.5 @ 4.5 v gate source drain 3 2 1 (top view) (note: microdot may be in either location) 2V7002Wt1g 3000/tape & reel sc ? 70 (pb ? free)
2n7002w, 2V7002W http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 71 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a t j = 150 c 15 a v gs = 0 v, v ds = 50 v t j = 25 c 100 n a t j = 150 c 10 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 10 a v ds = 0 v, v gs = 10 v 450 na v ds = 0 v, v gs = 5.0 v 150 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 500 ma 1.19 1.6 v gs = 4.5 v, i d = 200 ma 1.33 2.5 forward transconductance g fs v ds = 5 v, i d = 200 ma 530 ms charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 20 v 24.5 pf output capacitance c oss 4.2 reverse transfer capacitance c rss 2.2 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v; i d = 200 ma 0.7 nc threshold gate charge q g(th) 0.1 gate ? to ? source charge q gs 0.3 gate ? to ? drain charge q gd 0.1 switching characteristics, v gs = v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 25 v, i d = 500 ma, r g = 25 12.2 ns rise time t r 9.0 turn ? off delay time t d(off) 55.8 fall time t f 29 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.8 1.2 v t j = 85 c 0.7 2. pulse test: pulse width 300 s, duty cycle 2% 3. switching characteristics are independent of operating junction temperatures
2n7002w, 2V7002W http://onsemi.com 3 typical characteristics 5.0 v figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 6 4 2 0 0 0.4 0.8 1.2 1.6 6 4 2 0 0 0.4 0.8 1.2 figure 3. on ? resistance vs. drain current and temperature figure 4. on ? resistance vs. drain current and temperature i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 3.2 figure 5. on ? resistance vs. gate ? to ? source voltage figure 6. on ? resistance variation with temperature v gs , gate ? to ? source voltage (v) t j , junction temperature ( c) 10 8 6 4 2 0.4 0.8 1.6 2.4 125 100 75 50 25 0 ? 25 ? 50 0.6 1.0 1.4 1.8 2.2 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v 7.0 v 8.0 v 9.0 v 4.5 v 4.0 v 6.0 v 3.5 v 3.0 v 2.5 v t j = ? 55 c t j = 125 c t j = 25 c t j = ? 55 c t j = 125 c t j = 25 c t j = 85 c v gs = 4.5 v i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.8 1.6 2.4 3.2 r ds(on) , drain ? to ? source resistance ( ) t j = ? 55 c t j = 125 c t j = 25 c t j = 85 c v gs = 10 v i d = 500 ma i d = 200 ma 150 i d = 0.2 a v gs = 4.5 v v gs = 10 v 1.2 2.0 2.4 2.8 0.4 1.2 2.0 2.8
2n7002w, 2V7002W http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge qg, total gate charge (nc) 0. 8 0.6 0.4 0.2 0 0 1 2 3 4 5 figure 9. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) 1.2 1.0 0.8 0.6 0.4 0.01 1 10 v gs , gate ? to ? source voltage (v) i s , source current (a) t j = 25 c i d = 0.2 a 20 16 12 8 4 0 0 10 20 30 c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v gate ? to ? source or drain ? to ? source voltage (v) t j = 25 c t j = 85 c v gs = 0 v 0.1 1.0e ? 10 1.0e ? 9 1.0e ? 8 1.0e ? 6 5 1015202530 figure 10. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (v) i dss , leakage (a) v gs = 0 v t j = 150 c t j = 125 c t j = 85 c 35 40 45 50 55 60 1.0e ? 7 t j = 25 c
2n7002w, 2V7002W http://onsemi.com 5 package dimensions sc ? 70 (sot ? 323) case 419 ? 04 issue m a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref style 8: pin 1. gate 2. source 3. drain 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 2n7002w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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