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issue 1.3 - march 2009 1 ? diodes incorporated 2009 www.diodes.com a p roduct line of diodes incorporated ZXMC10A816N8 100v so8 complementary dual enhancement mode mosfet summary device v (br)dss (v) q g (nc) r ds(on) ( w ww w ) i d (a) t a = 25 c 0.230 @ v gs = 10v 2.1 q1 100 9.2 0.300 @ v gs = 4.5v 1.9 0.235 @ v gs = -10v -2.2 q2 -100 16.5 0.320 @ v gs = -4.5v -1.9 description this new generation complementary dual mosfet features low on-resistance achievable with low gate drive. features 100 v complementary in soic package low on-resistance fast switching speed low voltage (v gs = 4.5 v) gate drive applications dc motor control backlighting class d audio output stages (<100w) ordering information device reel size (inches) tape width (mm) quantity per reel ZXMC10A816N8tc 13 12 2,500 device marking zxmc 10a816 d2 s2 g2 d1 q1 n-channel q2 p-channel s1 g1 d1 s1 g1 s2 g2 to p vi ew d1 d2 d2
ZXMC10A816N8 issue 1.3 - march 2009 2 ? diodes incorporated 2009 www.diodes.com absolute maximum ratings parameter symbol n- channel q1 p- channel q2 unit drain-source voltage v dss 100 -100 v gate-source voltage v gs 20 20 v continuous drain current @ v gs = 10v; t a =25 c (b)(d) @ v gs = 10v; t a =70 c (b)(d) @ v gs = 10v; t a =25 c (a)(d) @ v gs = 10v; t a =25 c (a)(e) @ v gs = 10v; t l =25 c (f)(d) i d 2.1 1.7 1.7 2.0 2.3 -2.2 -1.8 -1.7 -2.0 -2.4 a pulsed drain current @ v gs = 10v; t a =25 c (c)(d) i dm 9.4 -10.5 a continuous source current (body diode) at t a =25 c (b)(d) i s 3.0 -3.1 a pulsed source current (body diode) at t a =25 c (c)(d) i sm 9.4 -10.5 a power dissipation at t a =25 c (a)(d) linear derating factor p d 1.3 10.0 w mw/ c power dissipation at t a =25 c (a)(e) linear derating factor p d 1.8 14.2 w mw/ c power dissipation at t a =25 c (b)(d) linear derating factor p d 2.1 16.7 w mw/ c power dissipation at t l =25 c (f)(d) linear derating factor p d 2.4 18.9 2.6 20.4 w mw/ c operating and storage temperature range t j , t stg -55 to 150 c thermal resistance parameter symbol value unit junction to ambient (a)(d) r q ja 100 c/w junction to ambient (a)(e) r q ja 70 c/w junction to ambient (b)(d) r q ja 60 c/w junction to lead (f)(d) r q jl 53 49 c/w notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. (b) same as note (a), except the device is measured at t 10 sec. (c) same as note (a), except the device is pulsed with d= 0.02 and pulse width 300 s. the pulse current is limited by the maximum junction temperature. (d) for a dual device with one active die. (e) for a device with two active die running at equal power. (f) thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition.
ZXMC10A816N8 issue 1.3 - march 2009 3 ? diodes incorporated 2009 www.diodes.com thermal characteristics 0.1 1 10 100 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 100 10m 100m 1 10 note (a)(d) 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse, t amb =25c dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s) note (a)(d) single pulse, t amb =25c 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
ZXMC10A816N8 issue 1.3 - march 2009 4 ? diodes incorporated 2009 www.diodes.com q1 (n-channel) electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 100 v i d = 250 m a, v gs = 0v zero gate voltage drain current i dss 0.5 a v ds = 100v, v gs = 0v gate-body leakage i gss 100 na v gs = 20v, v ds = 0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 m a, v ds = v gs static drain-source on-state resistance (a) r ds(on) 0.170 0.210 0.230 0.300 v gs = 10v, i d = 1.0a v gs = 4.5v, i d = 0.5a forward transconductance (a) (c) g fs 4.8 s v ds = 15v, i d = 1.6a dynamic capacitance (c) input capacitance c iss 497 pf output capacitance c oss 29 pf reverse transfer capacitance c rss 18 pf v ds = 50v, v gs = 0v f= 1mhz switching (b) (c) turn-on-delay time t d(on) 2.9 ns rise time t r 2.1 ns turn-off delay time t d(off) 12.1 ns fall time t f 5.0 ns v dd = 50v, v gs = 10v i d = 1.0a r g @ 6.0 w , gate charge (c) total gate charge q g 9.2 nc gate-source charge q gs 1.7 nc gate-drain charge q gd 2.5 nc v ds = 50v, v gs = 10v i d = 1.6a sourceCdrain diode diode forward voltage (a) v sd 0.85 0.95 v i s = 1.7a, v gs = 0v reverse recovery time (c) t rr 32 ns reverse recovery charge (c) q rr 40 nc i s = 1.7a, di/dt= 100a/ m s notes: (a) measured under pulsed conditions. pulse width 300 m s; duty cycle 2%. (b) switching characteristics are independent of operating junction temperature. (c) for design aid only, not subject to production testing
ZXMC10A816N8 issue 1.3 - march 2009 5 ? diodes incorporated 2009 www.diodes.com q1 (n-channel) typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 2.0 2.5 3.0 3.5 4.0 4.5 0.01 0.1 1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 10 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 3.5v 10v 5v 4.5v v gs 3v 4v output characteristics t = 25c v gs i d drain current (a) v ds drain-source voltage (v) 2.5v 5v 4.5v 4v 3v 10v 3.5v output characteristics t = 150c i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 1.6a v gs(th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 3v 4.5v 10v 4v 5v 3.5v on-resistance v drain current t = 25c v gs r ds(on) drain-source on-resistance (w) i d drain current (a) t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
ZXMC10A816N8 issue 1.3 - march 2009 6 ? diodes incorporated 2009 www.diodes.com q1 (n-channel) typical characteristics Ccontinued test circuits current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds dd v r d r g v ds i d i g 0.1 1 10 100 0 100 200 300 400 500 600 700 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0 2 4 6 8 10 0 2 4 6 8 10 i d = 1.6a v ds = 50v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v)
ZXMC10A816N8 issue 1.3 - march 2009 7 ? diodes incorporated 2009 www.diodes.com q1 (p-channel) electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss -100 v i d = -250 m a, v gs = 0v zero gate voltage drain current i dss -0.5 a v ds = -100v, v gs = 0v gate-body leakage i gss 100 na v gs = 20v, v ds = 0v gate-source threshold voltage v gs(th) -2.0 -4.0 v i d = -250 m a, v ds = v gs static drain-source on-state resistance (a) r ds(on) 0.170 0.250 0.235 0.320 v gs = -10v, i d = -1.0a v gs = -4.5v, i d = -0.5a forward transconductance (a) (c) g fs 4.7 s v ds = -15v, i d = -2.1a dynamic capacitance (c) input capacitance c iss 717 pf output capacitance c oss 55 pf reverse transfer capacitance c rss 46 pf v ds = -50v, v gs = 0v f= 1mhz switching (b) (c) turn-on-delay time t d(on) 4.3 ns rise time t r 5.2 ns turn-off delay time t d(off) 20 ns fall time t f 12 ns v dd = -50v, v gs = -10v i d = -1a r g @ 6.0 w , gate charge (c) total gate charge q g 16.5 nc gate-source charge q gs 2.5 nc gate-drain charge q gd 5.4 nc v ds = -50v, v gs = -10v i d = -2.1a sourceCdrain diode diode forward voltage (a) v sd -0.85 -0.95 v i s = -1.7a, v gs = 0v reverse recovery time (c) t rr 43 ns reverse recovery charge (c) q rr 77 nc i s = -1.7a, di/dt= 100a/ m s notes: (a) measured under pulsed conditions. pulse width 300 m s; duty cycle 2%. (b) switching characteristics are independent of operating junction temperature. (c) for design aid only, not subject to production testing
ZXMC10A816N8 issue 1.3 - march 2009 8 ? diodes incorporated 2009 www.diodes.com q2 (p-channel) typical characteristics 0.1 1 10 0.1 1 10 0.1 1 10 0.01 0.1 1 10 3.0 3.5 4.0 4.5 5.0 1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 10 10v 3.5v -v gs 4.5v 4v 5v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 4.5v 3v 4v 10v 3.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = - 2.1a v gs(th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4v 10v 5v 7v 3.5v 4.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance (w) -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
ZXMC10A816N8 issue 1.3 - march 2009 9 ? diodes incorporated 2009 www.diodes.com q2 (p-channel) typical characteristics Ccontinued 0.1 1 10 100 0 200 400 600 800 1000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 i d = -2.1a v ds = -50v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 0.2mf 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v dd r d r g pulse width , 1ms duty factor 0.1% v ds i d i g
ZXMC10A816N8 issue 1.3 - march 2009 10 ? diodes incorporated 2009 www.diodes.com packaging details - so8 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.053 0.069 1.35 1.75 e 0.050 bsc 1.27 bsc a1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51 d 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 h 0.228 0.244 5.80 6.20 0 8 0 8 e 0.150 0.157 3.80 4.00 - - - - - l 0.016 0.050 0.40 1.27 - - - - - note: controlling dimensions are in inches. approximate dimensions are provided in millimeters
ZXMC10A816N8 issue 1.3 - march 2009 11 ? diodes incorporated 2009 www.diodes.com important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety-critical, life support devices or systems. copyright ? 2009, diodes incorporated www.diodes.com

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