shantou huashan electronic devices co.,ltd . applications high voltage switching af power amp. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 180 v i c =1ma, i e =0 bv ceo collector-emitter breakdown voltage 160 v i c =1ma, i b =0 bv ebo emitter-base breakdown voltage 6 v i e =1ma i c =0 i cbo collector cutoff current 10 a v cb =120v, i e =0 i ebo emitter-base cutoff current 10 a v eb =4v, i c =0 h fe dc current gain 60 200 v ce =5v, i c =300ma v ce(sat) collector- emitter saturation voltage 0.3 1.0 v i c =500ma, i b =50ma v be base- emitter voltage 1.5 v v ce =5v,i c =10a cob output capacitance 23 pf v cb =10v, f=1 mhz f t current gain-bandwidth product 100 mhz v ce =10v,i c =50ma t on turn-on time 0.15 s t f fall time 0.48 s t stg storage time 0.81 s see specified test circuit h fe classification d e 60120 100200 npn s i l i c o n transistor t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 25w v cbo collector-base voltage 180v v ceo collector-emitter voltage 160v v ebo emitter-base voltage 6v i c collector current dc 1.5a i cp collector current pulse 3a HC2344 1 D base b 2 D collector c 3 D emitter, e to-220
shantou huashan electronic devices co.,ltd . npn s i l i c o n transistor HC2344
shantou huashan electronic devices co.,ltd . npn s i l i c o n transistor HC2344
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