smd type www.kexin.com.cn 1 diodes 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 silicon pin diodes BAR17 features rf switch rf attenuator for frequencies above 1 mhz low distortion factor long-term stability of electrical characteristics absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 100 v forward current i f 140 ma total power dissipation, t s 95 1) p tot 250 mw junction temperature t j 150 storage temperature t stg -55to+150 operating temperature range t op -55to+150 junction - ambient 1) r thja 295 junction - soldering point r thjs 215 note 1. package mounted on alumina 15 mm 16.7 mm 0.7 mm. k/w electrical characteristics ta = 25 parameter symbol test condition min typ max unit v r = 50 v 50 na v r = 100 v 1 a forward voltage v f i f = 100 ma 0.91 1 v v r = 50 v, f = 1 mhz 0.32 0.55 v r =0,f=100mhz 0.37 charge carrier life time ? l i f =10ma,i r =6ma 4 s i f = 0.01 ma, f = 100 mhz 1150 i f = 0.1 ma, f = 100 mhz 160 i f =1ma,f=100mhz 23 i f =10ma,f=100mhz 3.5 reverse current i r diode capacitance c t forward resistance r f pf marking marking l6
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