CDD120 diode-diode modules type CDD120n08 CDD120n12 CDD120n14 CDD120n16 CDD120n18 v rrm v 800 1200 1400 1600 1800 v rsm v 900 1300 1500 1700 1900 dimensions in mm (1mm=0.0394") symbol t est conditions maxim um ratings unit i frms i f a vm t vj =t vjm t c =105 o c; 180 o sine 180 120 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 2800 3300 2500 2750 a i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 39200 45000 31200 31300 a 2 s t vj t vjm t stg -40...+150 150 -40...+125 o c v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m5) t er minal connection torque (m5) _ 2.5-4/22-35 2.5-4/22-35 nm/lb .in. w eight 90 g 31 2 i 2 dt t ypical including scre ws 1 3 2 deecorp. www.datasheet.net/ datasheet pdf - http://www..co.kr/
CDD120 diode-diode modules ad v ant a ges * space and w eight sa vings * simple mounting * impro v ed temper ature and po w er cycling * reduced protection circuits applica tions * supplies f or dc po w er equipment * dc supply f or pwm in v er ter * field supply f or dc motors * batter y dc po w er supplies symbol t est conditions characteristic v alues unit v v f i f =300a; t vj =25 o c 1.43 v t o f or po w er-loss calculations only 0.75 v r t 1.95 m i r t vj =t vjm ; v r =v rrm 15 ma t vj =t vjm per diode; dc current per module r thjc 0.26 0.13 k/w per diode; dc current per module r thjk 0.46 0.23 k/w d s creepage distance on surf ace 12.7 mm d a str ik e distance through air 9.6 mm a maxim um allo w ab le acceler ation 50 m/s 2 uc q s t vj =125 o c; i f =50a; -di/dt=6a/us 170 i rm 45 a fea tures * inter national standard pac kage * direct copper bonded al 2 o 3 -cer amic base plate * planar passiv ated chips * isolation v oltage 3600 v~ * ul registered, e 72873 deecorp. www.datasheet.net/ datasheet pdf - http://www..co.kr/
CDD120 diode-diode modules fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 dt versus time (1-10 ms) fig. 2a maximum forward current at case temperature fig. 3 power dissipation versus forward current and ambient temperature (per diode) fig. 4 single phase rectifier bridge: power dissipation versus direct output current and ambient temperature r = resistive load l = inductive load deecorp. 2 x CDD120 www.datasheet.net/ datasheet pdf - http://www..co.kr/
CDD120 diode-diode modules fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 6 transient thermal impedance junction to case (per diode) fig. 7 transient thermal impedance junction to heatsink (per diode) r thjk for various conduction angles d: d r thjk (k/w) dc 0.46 180 o c 0.48 120 o c 0.50 60 o c 0.54 30 o c 0.58 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.013 0.0012 2 0.072 0.047 3 0.175 0.394 4 0.2 1.32 r thjc for various conduction angles d: d r thjc (k/w) dc 0.26 180 o c 0.28 120 o c 0.30 60 o c 0.34 30 o c 0.38 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.013 0.0012 2 0.072 0.047 3 0.175 0.394 deecorp. 3 x CDD120 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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