sfh6731/ sfh6732 document number 83685 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179075 1 2 3 4 8 7 6 5 a1 c1 a2 c2 v cc v o1 v o2 gnd pb p b -free e3 high speed optocoupler, dual, 5 mbd features ? data rate 5 mbits/s (2.5 mbit/s over temperature) buffer isolation test voltage, 5300 v rms ttl, lsttl and cmos compatible internal shield for very high common mode transient immunity wide supply voltage range (4.5 to 15 v) low input current (1.6 ma to 5.0 ma) specified from 0 c to 85 c lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection applications industrial control replace pulse transformers routine logic interfacing motion/power control high speed line receiver microprocessor system interfaces computer peripheral interfaces description the dual channel 5 mb/s sfh6731 and sfh6732 high speed optocoupler consists of a gaalas infrared emitting diode, optically coupled with an integrated photo detector. the detector incorporates a schmitt- trigger stage for improved noise immunity. a faraday shield provides a common mode transient immunity of 1000 v/ s at v cm = 50 v for sfh6731 and 500 v/ s at v cm = 300 v for sfh6732. the sfh6731 and sfh6732 uses an industry stan- dard dip-8 package. with standard lead bending, creepage distance and clearance of 7.0 mm with lead bending options 6, 7 and 9 8.0 mm are achieved. order information for additional information on t he available options refer to option information. truth table (positive logic) part remarks sfh6731 | cm h | 1000 @ | v cm | = 50 v, dip-8 sfh6732 | cm h | 5000 @ | v cm | = 300 v, dip-8 SFH6732-X007 | cm h | 5000 @ | v cm | = 300 v, smd-8 (option 7) parts ir diode output sfh6731 on h off l sfh6732 on h off l
www.vishay.com 2 document number 83685 rev. 1.5, 26-oct-04 sfh6731/ sfh6732 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler recommended operating conditions a 0.1 f bypass capacitor connected between pins 5 and 8 must be used. 1) we recommend using a 2.2 ma to permit at least 20 % ctr degradation guard band. parameter test condition symbol value unit reverse voltage v r 3.0 v dc forward current i f 10 ma surge forward current t p 1.0 s, 300 pulses/s i fsm 1.0 a power dissipation p diss 20 mw parameter test condition symbol value unit supply voltage v cc - 0.5 to + 15 v output voltage v o - 0.5 to + 15 v average output current i o 25 ma power dissipation p diss 100 mw parameter test condition symbol value unit storage temperature range t stg - 55 to + 125 c ambient temperature range t amb - 40 to + 85 c lead soldering temperature t = 10 sec t s 260 c isolation test voltage t = 1 s v iso 5300 v rms pollution degree 2.0 creepage distance and clearance standard lead bending 7.0 mm option 6, 7, 9 8.0 mm comparative tracking index per din iec112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? parameter test condition symbol min ty p. max unit supply voltage v cc 4.5 15 v forward input current i fon 1.6 1) 5.0 ma i foff 0.1 ma operating temperature t a 085c
sfh6731/ sfh6732 document number 83685 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input 0 c t amb 85 c; 4.5 v v cc 15 v; 1.6 ma i fon 5.0 ma; 2.0 v eh 15 v; 0 v el 0.8 v; 0 ma i foff 0.1 ma typical values: t amb = 25 c; v cc = 5.0 v; i fon =3.0 ma unless otherwise specified. output * output short circuit time 10 ms. coupler parameter test condition symbol min ty p. max unit forward voltage i f = 5.0 ma, v f 1.6 1.75 v v f 1.8 v input current hysteresis v cc = 5 v, i hys = i fon - i foff 01 ma reverse current v r = 3.0 v i r 0.5 10 a capacitance v r = 0 v, f = 1mhz c o 60 pf thermal resistance r thja 700 k/w parameter test condition symbol min ty p. max unit logic low output voltage i ol = 6.4 ma v ol 0.5 v logic high output voltage i oh = - 2.6 ma, *v oh = v cc - 1.8 v v oh 2.4 * v output leakage current (v out > v cc ) v o = 5.5 v, v cc = 4.5 v, i f = 5.0 ma i ohh 0.5 100 a v o = 15 v, v cc = 4.5 v, i f = 5.0 ma i ohh 1.0 500 a logic low supply current v cc = 5.5 v, i f = 0 i ccl 3.7 6.0 ma v cc = 15 v, i f = 0 i ccl 4.1 6.5 ma logic high supply current v cc = 5.5 v, i f = 5.0 ma i cch 3.4 4.0 ma v cc = 15 v, i f = 5.0 ma i cch 3.7 5.0 ma logic low short circuit output current v o = v cc = 5.5 v, i f = 0 i osl (2) 25 ma v o = v cc = 15 v, i f = 0 i osl (2) 40 ma logic high short circuit output current v cc = 5.5 v, v o = 0 v, i f = 5.0 ma i osh (2) - 10 ma v cc = 15 v, v o = 0 v, i f = 5.0 ma i osh (2) -25 ma thermal resistance 300 k/w parameter test condition symbol min ty p. max unit capacitance (input-output) f = 1.0 mhz, pins 1-4 and 5-8 shorted together c io 0.6 pf
www.vishay.com 4 document number 83685 rev. 1.5, 26-oct-04 sfh6731/ sfh6732 vishay semiconductors switching characteristics 0c t amb 85 c; 4.5 v v cc 15 v; 1.6 ma i fon 5.0 ma; 0 ma i foff 0.1 ma typical values: t amb = 25 c; v cc = 5.0 v; i fon = 3.0 ma unless otherwise specified. common mode transient immunity t amb = 25 c, v cc = 5 v (4) (4) cmh is the maximum slew rate of a common mode voltage vcm at which the output voltage remains at logic high level (vo > 2.0 v) . cml is the maximum slew rate of a common mode voltage vcm at which the output voltage remains at logic low level (v o < 0.8 v). typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit propagation delay time to logic low output level without peaking capacitor t phl 120 ns with peaking capacitor t phl 115 300 ns without peaking capacitor t plh 125 ns with peaking capacitor t plh 90 300 ns output rise time 10 % to 90 % t r 40 ns output fall time 90 % to 10 % t f 10 ns parameter test condition part symbol min ty p. max unit logic high common mode transient immunity 4) | v cm | = 50 v, i f = 1.6 ma sfh6731 | cm h | 1000 v/ s | v cm | = 300 v, i f = 1.6 ma sfh6732 | cm h | 5000 v/ s logic low common mode transient immunity 4) | v cm | = 50 v, i f = 0 ma sfh6731 | cm l | 1000 v/ s | v cm | = 1000 v, i f = 0 ma sfh6732 | cm l | 10000 v/ s figure 1. permissible total powe r dissipation vs. temperature isfh6731_01 t a - temperature - c emitter detector 150 120 100 75 50 25 0 C60 100 80 60 40 20 0 C20 C40 p tot - power dissipation - mw figure 2.typicalinputdiodeforwardcurrents.forwardvoltage isfh6731_02 v f - forward voltage i f - forward current - ma 0.010 0.100 1.000 10.000 1.3 1.4 1.5 1.6 1.7 t a =25c
sfh6731/ sfh6732 document number 83685 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 3. typical forward i nput voltage vs. temperature figure 4. typical output voltage vs. forward input current figure 5. typical supply cu rrent vs. temperature isfh6731_03 -60 -40 -20 0 20 40 60 80 100 1.45 1.50 1.55 1.60 1.65 1.70 1.75 ta - temperature - c v f - forward voltage - v i f =5ma isfh6731_04 0 1 2 3 4 5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i f -input current - ma v o - output voltage - v i ol = 6.4 ma i oh =C2.6ma v cc =4.5v t a =25c isfh6731_05 -60 -40 -20 0 20 40 60 80 100 3.2 3.4 3.6 3.8 4.0 4.2 t a - temperature - c i cc - supply curent - ma i ccl @ vcc =15v i cch @v cc =15v& i ccl @v cc = 5.5 v i cch @ vcc = 5.5 v figure 6.typicaloutputleaagecurrents.temperature figure 7.typicallowleelout putcurrents.temperature figure 8.typicallowleeloutputvoltages.temperature 731_06 -20 0 20 40 60 80 100 t a - temperature - c 400 500 600 700 800 900 1000 1100 -60 -40 current - na v cc =v o =15v v cc =v o = 5.5 v isfh6731_07 -20 0 20406080100 t a - temperature - c 20 23 25 28 30 33 35 38 40 -60 -40 i ol - low level output current - ma v cc =5v i f =0ma v ol = 0.6 v v ol = 0.4 v v ol = 0.8 v isfh6731_08 -60 -40 -20 0 20 40 60 80 100 t a - temperature - c 0.05 0.10 0.15 0.20 0.25 0.30 v ol - low level output voltage - v i o =16ma i o = 12.8 ma i o = 9.6 ma i o = 6.4 ma v cc =5v i f =0ma
www.vishay.com 6 document number 83685 rev. 1.5, 26-oct-04 sfh6731/ sfh6732 vishay semiconductors figure 9. typical high level outp ut current vs. temperature figure 10. rise and fall time vs. ambient temperature figure 11. typical propagatio n delays to logic high vs. temperature isfh6731_09 -60 -40 -20 0 20 40 60 80 100 t a - temperature - c -8 -7 -6 -5 -4 -3 -2 -1 0 i oh - high level output current - ma v oh = 2.4 v v cc = 4.5 v i f =5ma v oh = 2.7 v isfh6731_10 -60 -40 -20 0 20 40 60 80 100 t a - temperature - c 0 6 12 18 24 30 36 42 48 54 60 t r ,t f -rise, fall time - ns t r t f v cc =5v c l =15pf isfh6731_11 -60 -40 -20 0 20 40 60 80 100 t plh - propagation delay - ns t a - temperature - c 70 90 110 130 150 v cc =5v c = 15 pf (without peaking capacitor) i f =3ma i f =5ma i f = 1.6 ma figure 12.typicalpropagationdelaystologiclow vs.temperature figure 13.typicalpropagatio ndelaystologichighvs. temperature figure 14.typicalpropagationdelaystologiclow vs.temperature isfh6731_12 -60 -40 -20 0 20 40 60 80 100 t phl - propagation delay - ns t a - temperature - c 60 80 100 120 140 160 180 v cc =5v c1 = 15 pf (without peaking capacitor) i f =5ma i f =3ma i f = 1.6 ma isfh6731_13 -60 -40 -20 0 20 40 60 80 100 t plh - propagation delay - ns t a - temperature - c 50 60 70 80 90 100 v cc =5v c1 = 120 pf (without peaking capacitor) i f =1.6,3and5ma isfh6731_14 -60 -40 -20 0 20 40 60 80 100 t phl - propagation delay - ns t a - temperature - c 50 70 90 110 130 150 170 v cc =5v c1 = 120 pf (without peaking capacitor) i f =3ma i f =5ma i f = 1.6 ma
sfh6731/ sfh6732 document number 83685 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 figure 15. typical propagation delays to logic high vs. temperature figure 16. typical propagation delays to logic low vs.temperature figure 17. typical propagation delays to logic high vs. temperature isfh6731_15 -60 -40 -20 0 20 40 60 80 100 t plh - propagation delay - ns t a - temperature - c 50 60 70 80 90 v cc =15v c1 = 15 pf (without peaking capacitor) i f = 1.6 ma i f =3ma i f =5ma isfh6731_16 -60 -40 -20 0 20 40 60 80 100 t phl - propagation delay - ns t a - temperature - c 50 70 90 110 130 150 170 v cc =15v c1 = 15 pf (without peaking capacitor) i f =5ma i f = 1.6 ma i f =3ma isfh6731_17 -60 -40 -20 0 20 40 60 80 100 t plh - propagation delay - ns t a - temperature - c 30 40 50 60 70 80 v cc =15v c1 = 120 pf (without peaking capacitor) i f =1.6,3and5ma figure 18.typicalpropagationdelaystologiclow vs.temperature isfh6731_18 60 80 100 120 140 160 180 -60 -40 -20 0 20 40 60 80 100 v cc =15v c1 = 120 pf (peaking capacitor is used) i f =5ma t a - temperature - c t phl -propagation delay - ns i f =3ma i f = 1.6 ma
www.vishay.com 8 document number 83685 rev. 1.5, 26-oct-04 sfh6731/ sfh6732 vishay semiconductors figure 19. test circuit for t plh , t phl , t r and t f figure 20. test circuit for common mode tr ansient immunity and typical waveforms isfh6731_19 all diodes are 1n916 or 1n3064 the probe and jig capacitances are included in c1 and c2 pulse generator t r ,t f =5ns f=100khz 10% duty cycle 1 2 3 4 input i f monitoring node c1 = 120 pf c2=15pf r2=5kohm r3 = 619 ohm v cc gnd v cc 5v output vo monitoring node d1 d2 d3 d4 i f r1 0.1 f bypass 8 7 6 5 r1 i f (on) 2.15 kohm 1.6 ma 681 ohm 5ma 1.1 kohm 3ma input i f output v o i fon 50% i fon 0ma v oh 1.3 v t plh t phl v ol isfh6731_20 0.1 f bypass output v o monitoring node 1 2 3 4 6 7 8 v cc a b r pulse generator + C vcm 5 output v o vcm 400v/50v switch at a: i f = 1.6 ma 0v v oh v o (min) v ol v o (max) switch at b: i f =0ma v cc gnd
sfh6731/ sfh6732 document number 83685 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 9 package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .315 (8.0) min. .255 (6.5) .248 (6.3) .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18447
www.vishay.com 10 document number 83685 rev. 1.5, 26-oct-04 sfh6731/ sfh6732 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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